金薄膜 的英文怎麼說
中文拼音 [jīnbómó]
金薄膜
英文
[半] gold thin film-
The replicas are made by using a thin film of fusible alloy on a stiffening platen.
復制是用附著在加強托板上的可熔合金薄膜實現的。Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。Fabrication method of inertial confinement fusion alloy - films target
慣性約束聚變用合金薄膜靶制備方法Influence of ion incident angle on microstructures and magnetic properties of fexcr1 - x ahoy films
合金薄膜微結構及磁性的影響By using laser machining device, laser cleaning experiments of gold _ plating thin film on optical glass surface have been studied, laser cleaning threshold and damage threshold of gold _ plating thin film have been obtained
利用激光加工機對光學玻璃表面的鍍金薄膜進行了激光清洗試驗，獲得了鍍金薄膜的激光清洗閾值和損傷閾值。The stamp is then brought into contact with an appropriate sheet of “ paper ” ? a thin film of gold on a glass, silicon or polymer plate
然後讓壓模接觸一種合適的紙張? ?在玻璃、矽或高分子板上的金薄膜。Aluminum alloy films and sputtering targets for semiconductor integrated circuit wiring and electrodes
集成電路電極布線用鋁合金薄膜及其濺射靶材Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities
通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process
本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。The aires was conclusively demonstrated as a particular ir property exhibited commonly by nanostructured thin films of pt group metals and their alloys
研究結果進一步證明， aires是納米結構鉑族金屬及合金薄膜材料普遍具有的特殊紅外光學性能。Wu ping, wang fengping, qiu hong, pan liqing, tian yue : effect of substrate temperature and annealing on the anisotropic magnetoresistive property of nife films, rare metals, 22 ( 3 ) ( 2003 ) 202 - 205
王鳳平，劉還平，吳平，潘禮慶，邱宏，田躍，羅勝：基片溫度對坡莫合金薄膜結構和磁電阻的影響，發光學報， 24 （ 4 ） （ 2003 ） 435 - 437 。When x 0. 36, the alloy thin films keep the wurtzite structure. and the band gap could be varied from 3. 40 ev to 3. 93 ev. the mg0. 05zn0. 95o and mg0. 15zn0. 85o alloys with wurtzite structure show high thermal stability up to 1000
研究表明當x的取值小於等於0 . 36時，合金薄膜會保持zno六角形纖鋅礦結構，此時薄膜的能隙寬度可以在3 . 4ev到3 . 93ev之間調節。However, when x is 0. 36, phase separation will occur at 800. the intense ultraviolet photoluminescence ( pl ) from mgxzn1 - xo alloy thin film was observed at room temperature. with increasing the contant of mg2 + ion in the film, the peak position is blue - shifted to higher energy side
從x射線衍射的結果中還可以看到， x = 0 . 36的合金薄膜是一種亞穩態，當熱處理溫度在800以下時它是纖鋅礦結構，而在800以上時就出現了分相。The gmr effect has became a international researching hotspot after the discovery of gmr effect of fe / cr multilayers. people found that multilayers formed by ferromagnetic metal of transition family and nonmagnetic metal or by alloy film and nonmagnetic metal will take on gmr effect. the value of gmr of co / cu multilayers is the biggest which can reach 65 % under room temperature
繼fe / cr多層膜巨磁電阻效應發現以後，巨磁電阻效應已成為國際研究的熱點，人們發現過渡族鐵磁金屬或合金薄膜與非磁性金屬構成多層膜后均可呈現巨磁電阻效應，其中以co / cu多層膜的gmr值最高，室溫巨磁電阻效應可達65 % 。Tinipd shape memory alloy films made by vacuum evaporation
形狀記憶合金薄膜研究Advances of investigation on tini - based shape memory alloy films
領域中形狀記憶合金薄膜的研究與進展As a functional material, tini shape memory alloy thin film has the characteristics of large stress, strain and high work density. it is a perfect micro - actuator candidate for the micro - electrical mechanical system ( mems )
Tini形狀記憶合金薄膜被認為是目前微機械領域中較有發展前景的一種大應力、應變和高單位功密度的微驅動器材料，對它的研究和開發必將推動微電子機械繫統的發展，為人類探索和操作微觀世界提供一種有效的工具。Pulsed, filtered cathode arc plasma deposition ( pfcapd ) is a new deposition technology for a range of metals and compounds films free of the microdroplets associated with conventional arc evaporation, and it seems as one of the best methods to deposition hydrogen - free diamond like carbon which has widespread applications for its unique properties
脈沖磁過濾陰極弧等離子體沉積由於能很好地過濾液滴，沉積幾乎所有金屬及其合金薄膜材料，尤其能沉積極有應用前景的類金剛石膜及用於微電子工業的銅內連材料，日益受到重視。The experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of two - step annealing of metallic zn films in oxygen ambient, and it is feasible to fabricate high quality mgxzn1 - xo alloy films with mgo buffer layers by using thermal evaporation technique following by two - step annealing process. this method gives a new path to prepare mgxzn1 - xo alloy films
實驗結果表明利用電子束蒸發技術制備的zno薄膜材料，在經過氧氣氣氛下的二次退火處理后，能夠表現出較好的發光和結構特性；以mgo薄膜作為緩沖層制備出了高質量的mgzno合金薄膜材料，這為開展mgzno合金薄膜材料的研究開辟了新的途徑。Transformation temperature and mechanical properties of niti shape memory alloy thin films
鎳鈦形狀記憶合金薄膜的相變溫度和力學性能分享友人