錯位原子 的英文怎麼說

中文拼音 [cuòwèiyuánzi]
錯位原子 英文
misplaced atoms
  • 錯 : Ⅰ形容詞1 （錯誤; 不正確） wrong; mistaken; erroneous 2 （用於否定: 壞; 差） bad; poor 3 （交叉; ...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 原 : Ⅰ形容詞1 （最初的; 原來的） primary; original; former 2 （沒有加工的） unprocessed; raw Ⅱ動詞（原...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  1. Atomistic simulation of the relaxed structure and energy of edge dislocation in metal ta

    中刃型位錯弛豫結構和能量的原子級模擬
  2. In electroplated metals, these defects are primarily dislocations, twins, and deposited foreign atoms or molecular groups.

    對于電鍍的金屬來說，這些缺陷主要是位錯，孿晶和其沉積的異類，原子或分子基因。
  3. My conjecture had been correct : the strangers had slipped in before us, and they now stood by the vault of the rochesters, their backs towards us, viewing through the rails the old times - stained marble tomb, where a kneeling angel guarded the remains of damer de rochester, slain at marston moor in the time of the civil wars, and of elizabeth, his wife

    我的猜測沒有錯，這兩個陌生人在我們之前溜了進來，此刻背朝著我們，站立在羅切斯特家族的墓穴旁邊，透過柵欄，瞧著帶有時間印跡的古老大理石墳墓，這里一位下跪的天使守衛著內戰中死於馬斯頓荒原的戴默爾德羅切斯特的遺骸和他的妻子伊麗莎白。
  4. 0 x 10 " 3 and 264. 6mpa respectively. 6. the damping mechanism at ambient temperature is related to viscous motion of dislocation and interactions between dislocation with various point defects, the viscous sliding between the phase with rich zn and primary a dendrite crystals and the micro - plastic deformation of the soft phase in the eutectic

    6 ） azsm合金的室溫阻尼行為與組織中的溶質原子和位錯的交互作用以及位錯的粘性運動、富鋅相與基體之間的粘性滑移、以及共晶體中較軟相的西安理工大學碩士學位論文微塑性變形有關。
  5. Slight displacements of atoms relative to their normal lattice positions, normally imposed by crystalline defects such as dislocations, and interstitial and impurity atoms

    原子相對於它們正常點陣位置的輕微位移，通常是由晶體的缺陷，如位錯、間隙原子、雜質原子存在引起的。
  6. This subsystem uses information from the user to diagnosis of failures which can assist the inspector or engineer to : - identifying the failures during the mixing process. - diagnosing the cause and position of the failures

    這個子系統使用從用戶或是工程師那反饋的信息來對錯誤進行診斷： ?識別在混合過程中所發生的錯誤， ?診斷錯誤的原因並定位錯誤。
  7. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  8. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  9. Plastic deformation as the result of dislocation motion ; also, the shear displacement of two adjacent planes of atoms

    位錯移動導致的塑性變形或兩個相鄰原子面的剪切位移。
  10. In order to improve the properties of materials, one needs to understand the structural relationship between interface and matrix of the materials, such as interface atomic structure, misfit dislocation, chemical bond structure, stress field distribution, composition segregation etc. there are tremendous research works on the grain boundary and interface structures during last century and the sophisticated theory about grain boundary and interface, i. e. coincidence site lattice and 0 - lattice theories had been developed simultaneously

    眾所周知，材料的宏觀性質是由其微觀結構所決定的，因此，為了改善材料的宏觀性能我們有必要弄清楚材料的界面與基體之間的結構關系，如界面的原子結構、失配位錯、化學鍵合、應力場的分佈等等。在上世紀，人們已對晶界和相界面結構進行了大量的研究，同時，相關的理論如「重位點陣」和「 o -點陣」理論也發展成熟。
  11. There are 4 cysteins in the protein hbfgf, cysteins 78 and 96 are localized on the surface of hbfgf, whereas cystein 34 is completely buried and cystein 101 is partly buried within the folded peptide chain. so the cys78 and cys96 are especially prone to intramolecular disulphide - bond formation. we converted these two cysteins into serines

    同時對於155個氨基酸的hbfgf來說，其34 、 78 、 96和101位的四個半胱氨酸的巰基有形成二硫鍵的可能，是造成二聚體或多聚體的主要原因，其中cys34隱藏在分子內部， cys101部分包埋在分子中； cys78和cys96暴露在蛋白質的表面，很容易因cys78和cys96的游離巰基氧化，在不同的分子間形成錯誤的二硫鍵。
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