鍺晶體 的英文怎麼說
中文拼音 [zhějīngtǐ]
鍺晶體
英文
germanium crystal-
Cryostat end - cap dimensions for germanium semiconductor detectors for gamma - ray spectrometers
鍺半導體射線光譜分析儀用鍺半導體探頭晶體端.帽罩尺寸Collection of metallographs on defects of crystalline germanium
鍺晶體缺陷圖譜The fishkill fab is so up - to - date that it is capable of producing chips with all of the latest acronyms, from copper cmos technology to silicon - on - insulator and low - k dielectrics - all on 300mm wafers
Fishkill工廠如此先進，可以生產幾乎所有最新的晶元：從銅cmos xs到絕緣硅、硅鍺合金以及low - k絕緣體，所有這些都可以在300mm的晶片上生產。Abstract : in view of the crystal structure, this paper repo rts thecharacter of single crystal growth of germanate and the properties as me dium of laser crystal. the study and progress in germanate crystals used as widel y tunable laser crystal, self - doubling - frequency crystal and highly efficient and low pumping threshold laser crystal are introduced
文摘:從晶體結構上分析了鍺酸鹽的單晶生長和作為激光晶體基質的特點，並介紹了鍺酸鹽作為可調諧激光晶體，自倍頻晶體，高轉換效率和低泵浦閾值的激光晶體的研究及進展。Nuclear instrumentation - high - purity germanium crystals for radiation detectors
核裝置.放射探測器用高純度鍺晶體Method of measurement of etch pit density of germanium crystal
鍺晶體浸蝕點密度的測定方法In computers, these diodes are primarily germanium or silicon crystals
在計算機中，這些二極體基本上是鍺或硅晶體二極體。Ti introduces the silicon - based transistor which soon eclipsed germaninum devices in production volume
Ti公司開發硅晶體管，從而在生產量上迅速超過鍺晶體管。Review on the research of bi4ge3o12 scintillation crystals
鍺酸鉍閃爍晶體的研究綜述Test procedures for high - purity germanium crystals for radiation detectors
輻射探測器用高純鍺晶體試驗程序Test procedure for high - purity germanium crystals for radiation detectors
輻射探測器用高純度鍺晶體的測試程序Cadmium germanium arsenide, cdgeas2, has promising advantage for its attractive nonlinear optical properties in all chalcopyrite semiconductors. it has an extremely high nonlinear coefficient, a wide infrared transparency range, but crystal of cdgeas2 has a strong absorption at 5. 5 m which related to a native acceptor - defect
砷化鍺鎘晶體（ cdgeas2 ）是黃銅礦類半導體晶體中綜合性能最優者，其非線性光學系數和遠紅外區透過率很高，但其在中紅外區5 . 5 m有較強的吸收。In fact, the transistor consists of only a single piece of germanium or silicon with wires connected to it
事實上，晶體管只是由一個鍺片或矽片構成的，導線都接在其上面。After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate
運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。In this paper, germanium concentration in ge - dopped silicon bulk single crystals was measured by the methods of indution couple plasma ( icp ) direct reading spectrometer, sims, sem - edx, and the effective segregation coefficent of germanium under the situation of the changed speed was calculated, the result was 0. 62. according to the result, the curves of different ge concentrations were got
本論文利用二次離子質譜（ sims ） 、化學分析法（電感耦合等離子體（ icp ）直讀光譜儀） 、掃描電鏡能譜儀（ sem - edx ）三種方法對不同摻鍺濃度的czsige單晶中鍺含量進行了測試，並對變速拉晶條件下鍺的有效分凝系數進行了計算，得出鍺的有效分凝系數（ ke ）為0 . 62 。The research of positron imaging systems can be divided into two parts : imaging instrumentation and image reconstruction, which are the main interest of this thesis. the bgo ( bismuth germanate ) scintillation crystal coupled with a position sensitive photomultiplier tube ( ps - pmt ) h7546 are used to build the y - rays detector
我們設計了以閃爍晶體作為成像前端，與多陽極位置靈敏型光電倍增管相耦合的射線探測器，具體為bgo （ bi _ 4ge _ 3o _ （ 12 ） ，鍺酸鉍）晶體、 hamamastu的h7546光電倍增管。Determination method for interstitial atomic oxygen content of germanium by infrared abaorption
鍺單晶體中間隙氧含量的紅外吸收測定方法分享友人