鎘譜線 的英文怎麼說

中文拼音 [xiàn]
鎘譜線 英文
cadmium lines
  • : 名詞[化學] cadmium (48號元素, 符號 cd)
  • : Ⅰ名詞[書面語]1 (按類別或系統編成的書或冊子等) table; chart; register 2 (指導練習的格式或圖形)...
  • : 名詞1 (用絲、棉、金屬等製成的細長的東西) thread; string; wire 2 [數學] (一個點任意移動所構成的...
  1. The imported transparent glaze fired at lower temperature was analysed semi - quantitatively by adopting emission spectroscope. the stripping of lead and cadmium from this transparent glaze fired at lower temperature in ceramic product was determined by atomic absorption spectroscope. the effect of chemical composition on the stripping of lead and cadmium was analysed. upon the author s opinion, the overproof lead stripping from the imported transparent glaze fired at lower temperature can only be settled by adopting lead - free glaze instead of adopting low - lead prescription. the author succeeded in developing an excellent lead - free transparent glaze fired at the lower temperature of 1000 1050. the success is based on an inquiry into the feasibility of using such new agents of fusion as li2o and sro in replacement of pbo ; and on a study of the effects of the contents of sio2 , al2o3 , b2o3and other metallic oxides on such performances of glaze as coefficient of linear expansion, fusion temperature and transparency. it is also based on an analysis of coefficient of linear expansion of blank and glaze on an analysis of coefficient of linear expansion of blank and glaze on their correlation ; and on a study of technology for preparing glaze

    採用發射光儀對進口低溫透明釉進行半定量分析,並用原子吸收光儀測定其陶瓷製品的鉛、的溶出量,分析化學成分對鉛、溶出量的影響.結果表明,進口低溫透明釉採用低鉛配方不能解決鉛溶出量的超標問題,只有採用無鉛釉才能解決.探討用氧化鋰和氧化鍶等新型熔劑完全代替氧化鉛的工藝,研究釉料中氧化硅、氧化鋁、氧化硼和各種金屬氧化物的含量,對釉的膨脹系數、熔融溫度和透明度等性能的影響.分析坯料、釉料的膨脹系數及其相互關系和釉料制備的工藝,研製出優質的1000 1050低溫無鉛透明釉
  2. Cadmium red line

    元素紅
  3. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料,用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ ( 1 - x ) zn _ xte晶體。在此基礎上對碲鋅探測器的工藝進行了較深入的研究,製作了厚1 ? 1 . 5mm的探測器,測試了c 、 in 、 au等不同金屬的電極接觸性能,並在國內首次通過測試器件的i ? v 、 i ? t曲、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析,同時測得的~ ( 241 ) am源的能
  4. The tio2, cds and cds - tio2 films on the common glass substrate were prepared, respectively, using ti ( oc4h9 ) 4, cd ( cooch3 ) 2 and scn2h4 as raw materials by sol - gel method. the influences of manifold preparing parameters ( such as the concentration of sol, the amount of the peg. the number of coatings, the heat - treated temperature and time ) on the structure and performance were studied

    本文採用溶膠-凝膠技術,以鈦酸丁酯、乙酸和硫脲為原料,以普通玻璃片為載體,制備了納米tio _ 2薄膜、 cds薄膜和cds - tio _ 2復合半導體薄膜,研究了制備過程中多種制備參數(如溶膠的濃度,聚乙二醇( peg )的加入量,鍍膜層數,熱處理溫度及時間)對薄膜結構和性能的影響,採用x -射衍射( xrd ) 、掃描電鏡( sem ) 、能分析( edxa ) 、紫外-可見吸收光( uv - vis )等測試手段對各薄膜進行了結構和物性表徵。
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