長時間退火 的英文怎麼說

中文拼音 [zhǎngshíjiāntuìhuǒ]
長時間退火 英文
long term annealing
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 時 : shí］Ⅰ名1 （比較長的一段時間）time; times; days:當時at that time; in those days; 古時 ancient tim...
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 長時間 : long
  • 退火 : [冶金學] anneal; annealing; back-out
  1. In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films

    在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
  2. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。
  3. At the s ame time, an exceptional structure has been found in the sample annealed for one hour at 800. it appears the single crystal lattice irradiated by high - energy electron beam within a few seconds and then becomes amorphous structure quickly

    同時在800退火1小時的薄膜中發現一種異常結構，在短時間高能電子束照射下呈現明晰的單晶衍射斑點，但時間一長，非晶化現象嚴重。
  4. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  5. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  6. This, on the one hand, greatly obstructs the automation, and on the other, makes it very hard for the green hand to master. as a result, the technique is now meeting with the problem of handing down. the key to the problem is to quantify in a pragmatic way the effect that different factors have on plate shaping

    隨著科技的發展，由於水火彎板加工的經驗性及手工操作，使得外板彎曲成形加工成為影響船體建造周期與實現自動化的瓶頸；而且隨著老工人的退休，而青年工人掌握這項工藝又需相當長的時間，導致水火彎板技術青黃不接的現象日趨嚴重。
  7. But long time anneal will cause thermal degradation the whole spin - valve because of interlayer diffusion

    但長時間的高溫退火處理將會造成自旋閥其它各層之間的界面擴散，影響其性能。
  8. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
  9. Karst ecosystem is a kind of vulnerable ecosystem, its vulnerability including mainly : 1 environment capacity is small, vegetation is difficult to recover after having been destructed, hydrologic movement is rapid and floods and droughts often occur ; 2 vegetation growth depends on the conditions of eco - environment overly, which are affected by environment obviously ; 3the positive evolve of eco - environment relies on the recover of vegetation, 4the methods of water resource use and land use lack of rationality. these vulnerabilities are be magnified by climate changes

    巖溶生態系統是一種脆弱的生態系統，它的脆弱性主要表現在：環境容量小，植被遭破壞后很長時間才能恢復，以及水文過程變化迅速，旱澇時常發生；植被生長過度依賴于生境條件，但生境條件受到環境影響明顯；生態環境的良性演化依賴植被的恢復；水資源利用與土地利用方式間缺乏合理性，如刀耕火種、過渡開墾造成生態環境中種子庫嚴重丟失，物種多樣性受到影響，植被演化趨于單一或種群退化。
  10. High anneal temperature and long anneal time do good on increasing the size and density of silicon nano - crystals

    退火后薄膜中的晶粒尺寸和密度都有所提高，退火溫度升高或退火時間延長都有助於結晶狀態的改善。
  11. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  12. The photoluminescence of the thin films without post heating is weak. only one luminescence band is found nearby 473nm. two luminescence bands are found after post heating, nearby 493nm and 368nm respectively. the intensity of the luminescence bands increase little by little when the temperature and the time of post heating continues to increase

    而退火處理過后，薄膜出現兩種光致發光現象，即藍色發光和紫外發光，其峰值分別在493nm和368nm附近，而且隨著退火溫度的升高和退火時間的延長，發光譜帶的強度逐漸增大，峰形的位置也有不明顯的藍移。
  13. The effect of annealing condition such as temperature, time and vacuum on microstructure of vo2 films was studies. the crystalline vo2 films can be obtained after annealing at 450 3 hour in 10pa vacuum. the conductivity of films increases linearly with increasing the temperature

    對退火溫度和時間以及真空度的影響進行了研究，在低真空（ 10pa ） 450退火3小時后得到的vo _ 2薄膜，晶體顆粒呈長方柱狀，具有良好的結晶性能。
  14. We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio, growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer, while other parameters like growth pressure, pressure during annealing and ramping rate show little influence

    在大源流量流下，研究了gan緩沖層各生長參數的影響規律，發現對緩沖層生長影響顯著的條件有生長比、生長溫度、退火時的氨氣流量。而緩沖層生長壓力、退火壓力及退火時間的影響相對較小。
  15. Diffusion / oxidation furnace is a kind of very important equipment which is used in semiconductor process production line. it is applied in the manufacture process of the discrete semiconductor devices and integrated circuit which have diffusion, oxidation, annealing and alloying processing. it is also used in special temperature treatment of other material and is an auto - equipment which has the command of long time working, high precision and high stability

    擴散/氧化爐是半導體工藝生產線上非常重要的一種工藝設備，用於分立半導體器件、集成電路製造過程中各種擴散、氧化、退火及合金工藝，也適用於對其他材料的特殊溫度處理，是一種要求能長時間連續工作、高精度、高穩定性的自動控制設備。
  16. The gradient films and the modification of the microstructure can be realized by the post - heating. then the novel antireflecting energy saving coating glass is achieved. it is also found when the temperature and time of the post - heating increases, the average reflectivity will decrease and the average transmission will increase

    實驗結果表明，隨著退火處理溫度的升高和退火時間的延長，鍍膜玻璃的平均反射比呈線性下降的趨勢，而其平均透射比則呈現增大的趨勢，不過前者的下降趨勢更加劇烈和明顯。
  17. Both the size and density of oxygen precipitation increase with the annealing time, and the size of oxygen precipitation decrease with the increase of the annealing temperature

    隨著退火時間的延長氧沉澱尺寸增大，密度略有增加；隨著退火溫度的升高，氧沉澱尺寸相對減小。
  18. The latter structure is composed of polycrystalline graphite in fact. a large amount of sic > 2 single crystals with the size of lonm appears in the film when the time of the post - heating is increased to five hours

    當退火時間延長到5個小時，薄膜的結晶度和600退火一個小時的薄膜相類似，不過，薄膜中大量存在的是10nm左右的sio2晶粒。
  19. Anneal treating has different influence on the films " electrical properties. at lower treating temperature, treating time and treating atmosphere ' s influence on electrical properties are not obvious : at higher treating temperature, the sheet resistance increases with the treating temperature and the treating time ' s increasing because of o ion and na ion ' s permeating into the films. based on the above study, semi - industrial experimentation on line has been done in the float glass line

    退火處理對薄膜電性能也有較大影響，在較低退火溫度下，退火時間和退火氣氛對薄膜電性能影響不是很大；在較高退火溫度下，玻璃基板中的na ~ +等堿金屬離子和退火氣氛中的o對薄膜電性能影響很大，退火溫度越高，退火時間越長，薄膜電阻率越大。
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