閉值域定理 的英文怎麼說

中文拼音 [bìzhíyùdìnglǐ]
閉值域定理 英文
closed range theorem
  • 閉 : Ⅰ動詞1. （關; 合） close; shut 2. （堵塞不通） block up; obstruct; stop up Ⅱ名詞（姓氏） a surname
  • 域 : 名詞（在一定疆界內的地方; 疆域） land within certain boundaries; territory; region
  • 定 : Ⅰ形容詞1 （平靜; 穩定） calm; stable 2 （已經確定的; 不改變的） fixed; settled; established Ⅱ動詞...
  • 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
  1. Second, we discuss composition operators on bloch space with closed range. by using a distortion theorem of bonk, minda and yanagihara about bloch functions, we obtain the sharp estimation of the lipschitz continuity of the dilation of bloch functions. then, we improve a theorem of ghatage, yan and zheng about composition operators on bloch space with closed range

    其次研究了bloch空間上有閉值域的復合運算元，先利用bonk 、 minda和yanagihara關于bloch函數的一個偏差定理，得到bloch函數伸縮率的lipschitz連續性的精確估計式，用這個估計式改進了ghatage 、 yan和zheng關于bloch空間上關于有閉值域的復合運算元的一個定理。
  2. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  3. By the theoretical analysis and experimental test, the image processing procedure of the system has been designed. firstly, the system needs carry out pre - process : the median filtering and average filtering of acquired image, next carrying out the threshold of filtered image, then performing morphology, such as open, close and so on. next, the boundary of binary image is extracted

    通過理論分析與實驗驗證，得到了本系統圖像處理過程:首先對採集的圖像進行預處理，包括均值中值濾波，通過閾值分割進行二值化，然後對二值圖像進行開啟、閉合以及進行邊界提取操作來獲得清晰的圖像邊緣，最後通過邊緣檢測和擬合測量得到沖擊試樣各尺寸值，圖像坐標變換和模式匹配可以完成檢測區域定位。
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