間隙空位缺陷 的英文怎麼說

中文拼音 [jiānxìkōngwèiquēxiàn]
間隙空位缺陷 英文
interstitial vacancy defect
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 隙 : 名詞1 （縫隙; 裂縫） crack; chink; crevice 2 （空閑） gap; interval 3 （漏洞; 機會） loophole; op...
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 間隙 : （空隙） interval; gap; freedom; space; [機械工程] clearance; separation; stricture; clear; inter...
  • 空位 : 1 （空著的位子） a vacant or unoccupied seat; void; vacancy 2 [固體物理] [物理學] [半] vacancy; b...
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void

    Fpds端部八面體空洞的消失分為兩個階段： （一）覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子，尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入，而逐漸變薄直至最終消失。 （二）無氧化膜的空洞，在高溫下發出一個個空位，同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部，使空洞逐漸變淺直至最後消失。
  2. Moreover, the octahedron voids would change to shallow orbicular pits and vanished at last if the etching time was prolonged. our results were contrasted to the result that the fpds are interstitial type defects concluded by takeno et al and support the views that the fpds are vacancy - type defects

    本次的實驗結果與takenold等人對fpds的研究結果大大相反，他們認為fpds的端部是一些間隙型的位錯環，而本實驗的實驗結果卻支持了fpd缺陷屬空位型缺陷的觀點。
  3. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  4. In te - rich cdte crystals, at high temperature cd vacancies were the dominant point defects, while at low temperature the concentrations of te anti - sites, te interstitials and cd vacancies were all very high

    富te的cdte晶體中，高溫下，晶內多餘te形成的原子缺陷主要是cd空位。低溫下，則晶內te反位原子、 te間隙原子和cd空位的濃度都很高。
  5. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  6. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
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