閾值流量密度 的英文怎麼說

中文拼音 [yùzhíliúliángmìdù]
閾值流量密度 英文
threshold flow density
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 流量 : rate of flow; flow; runoff; discharge; throughput; （flow） rate; quantity （of flow）; flux
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  3. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  4. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
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