閾電流 的英文怎麼說

中文拼音 [yùdiànliú]
閾電流 英文
threshold current
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  3. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  4. The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature

    研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。
  5. Vertical - cavity surface - emitting lasers ( vcsel ' s ) have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation and very low threshold current. they are especially suitable for making two - dimensional ( 2 - d ) arrays as well as vcsel ' s based integrate devices

    垂直腔面發射半導體激光器（ vcsel ）與傳統的邊發射半導體激光器相比，它具有發散角小、單縱模工作、非常低的閾值電流等優點，尤其它適於二維面陣集成和與其它光電子器件集成。
  6. As the injection current is increased above the threshold value (10. 7-24), the laser oscillation intensity builds up.

    當注入電流增加到由式（107-24）表示的閾值以上時，激光振蕩強度就會增長。
  7. The lowest threshold current 1. 8ma is achieved with continuous - wave at room temperature, the maximum output power is 7. 96mw. for the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching

    利用濕法氧化和選擇性腐蝕相結合工藝研製出室溫連續工作的vcsel ，最低閾值電流為1 . 8ma ，輸出功率為7 . 96mw 。
  8. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  9. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  10. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  11. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱激光器及高亮度發光管的理論研究與實驗的基礎之上，採用沈光地教授提出的隧道級聯思想，成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙波長應變量子阱激光器，激射波長分別為952 2nm和990 2nm ， el譜的譜線寬度約3nm ，未鍍膜器件單面最大輸出光功率可達2w以上，閾值電流最低達120ma 。
  12. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  13. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  14. There are many approaches to achieve the purpose, and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure, in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties

    有多種途徑實現ld光束特性的改善，其中採用多有源區隧道結級聯大光腔結構的半導體激光器是既增加有源區等效厚度而又保證ld低閾值電流和高斜率效率等特性的最佳途徑之一。
  15. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  16. All the power devices including main switches and auxiliary switches are in soft - switching condition ( zvs or zcs ), while the freewheeling diodes are turned off in zero current condition. besides, the control of resonance between inductance and capacitor can be easily realized without needing of setting the threshold values of the inductance current

    該電路中主開關和輔助開關均滿足zvs或zcs條件，續流二極體也工作在軟關斷方式，並且電感和電容之間的諧振控制不需要設定電感電流閾值，控制邏輯簡單，可實現四象限運行。
  17. Current probe warning threshold ( s ) set successfully

    電流探測器警告閾值已成功設置。
  18. The optical effect on the uniformity of mesfet threshold voltage is studied. results show that optical radiation enhances the drain - source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction. optical radiation enhances the uniformity of mesfet threshold voltage

    本文研究了光照對閾值電壓均勻性的影響，觀察到在光照條件下，耗盡型mesfet的溝道電流增加，閾值電壓向負方向增加，光照提高了閾值電壓的均勻性。
  19. As the injection current is increased above the threshold value ( 10. 7 - 24 ), the laser oscillation intensity builds up

    當注入電流增加到由式（ 10 7 - 24 ）表示的閾值以上時，激光振蕩強度就會增長。
  20. Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet

    本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。
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