降壓平片 的英文怎麼說

中文拼音 [jiàngpíngpiān]
降壓平片 英文
antihypertensive tablet
  • : 降動詞1. (投降) surrender; capitulate 2. (降伏) subdue; vanquish; tame
  • : 壓構詞成分。
  • : Ⅰ形容詞1 (沒有高低凹凸 不頃斜) flat; level; even; smooth 2 (高度相同; 不相上下) on the same l...
  • : 片構詞成分。
  1. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝,側重研究了碳化時間、反應室氣、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基取向等因素對碳化層質量的影響,研究結果表明:隨著碳化時間的增長,碳化層的晶粒尺寸隨之變大,表面粗糙度隨之低,但當碳化到一定時間之後,碳化反應減緩,碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣的升高而變大,適中的反應室氣可得到表面比較整的碳化層;在c源氣體的流量相對較小時,碳化層的晶粒尺寸隨氣體流量的變化不明顯,但當氣體流量增大到一定程度時,碳化層的晶粒尺寸隨氣體流量的增大而明顯變大,同時,適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時,碳化層的晶粒取向不明顯,隨著碳化溫度的升高,碳化層的晶粒尺寸明顯變大,且有微弱的單晶取向出現,但取向較差,同時,適中的碳化溫度可得到表面整的碳化層;相比于c _ 2h _ 2 ,以ch _ 4作為c源氣體時得到的碳化層表面整得多;比起si ( 100 ) ,選用si ( 111 )作為基生長的碳化層的晶粒取向一致性明顯更好。
  2. The main work and conclusion for this paper is as following : according to the flashover test results of several kinds of iced insulators under positive voltage and negative voltage, this paper obtained : for the single porcelain insulator, the single glass insulator and the composite insulator bridged completely by icicle, the metal cathode ' s strong ability of emission electron is the primary reason that results in the lower negative flashover voltage ; the position difference of the high resistance district in method anode side results in that porcelain insulator cluster and glass insulator cluster have an evident effect of polarity ; when less ice and no icicle at the brim of the sheds, due to numerous non - polar arcs on the composite surface, the effects of polarity of composite insulator was lost using the test method of the average flashover voltage in the freezing period, dc flashover performances were investigated of several insulators with some typical structures and different material

    本文的主要工作和結論如下:在人工氣候室內,根據不同覆冰絕緣子正、負極性下的閃絡試驗結果,得出負極性電弧金屬陰極的強電子發射能力造成了單瓷、玻璃絕緣子及被冰凌橋接的合成絕緣子有較低負極性冰閃電;正極性電弧金屬陽極側產生高電阻區所處位置的差異使得瓷和玻璃絕緣子串具有明顯的極性效應;覆冰較少時,合成絕緣子表面出現數量較多的非極性電弧使合成絕緣子無極性效應。利用覆冰期內均閃絡電的試驗方法,對不同材質和結構的絕緣子在覆冰、低氣和污穢共存環境中的直流閃絡特性進行了研究。試驗結果表明,直流均閃絡電隨著海拔的升高、覆冰量的增加以及污穢度的增加而低,且其特徵指數與絕緣子結構、覆冰量、覆冰狀態、污穢度等有關。
  3. There are better performances in the films prepared by ba2ca2cu3ox target than by ba2cacu2ox target. the single - phase tl2ba2cacu2o8 hts thin film was obtained with a tc0 of 107k at the optimal tl2o partial pressure and thallination temperature 750. on excursion from the optimal conditions, there exist some impurities in the resultant films resulting in a reduction in tc0 and surface quality with change in the microstructure morphology

    研究結果表明,採用成分為ba2ca2cu3ox的靶材制備的薄膜性能要優于成分為ba2cacu2ox的靶材;使用組成式為tl1 . 9ba2ca2cu3oy的鉈做鉈源時,形成的tl2o分達到最佳值;在最佳tl2o分和最佳鉈化溫度750的條件下,制備出了純相完全c軸取向的tl2ba2cacu2o8高溫超導薄膜,其tc0高達107k ,膜面均勻整光滑,呈圓狀組織;偏離最佳制備工藝參數的條件下,制得的薄膜中都含有一定量的雜相,雜相的生成使得tc0值下,薄膜表面質量下,薄膜組織形貌發生變化。
  4. The main simulation results were as follow : the average energy of electron decreases with the increasing pressure ; it decreases with the increasing methane concentration in the filling gas in the lower pressure range and increases in the higher pressure range ; the number density of fragment h and ch3 does not always increases with the gas pressure, but reaches an individual maximum ; energy carried by neutral dissociative fragment ch3 decreases with increasing gas pressure and ch4 concentration

    主要結果如下:均電子能量隨著反應室內氣的增加呈下趨勢;在較低氣范圍內均電子能量隨著反應源氣體中甲烷濃度的增加而減少;在較高氣范圍內均電子能量則隨著甲烷濃度的增加而增加;隨著氣的增加碎h和ch _ 3的數目並不是一直增加的,而是在不同的特定氣下出現各自的最值;碎攜帶的能量基本隨甲烷濃度和氣的增加而減小。
  5. As the measurement of pressure drop of meta l diaphragm tank is not allowed, installation of the cavitating veturi at the exit of tank is a simple and effective method to solve the unbalanced output of flow

    對于不允許測量貯箱的金屬膜貯箱,在其出口設置氣蝕文都利管是解決並聯貯箱不衡輸出的簡單而又有效的方案。
  6. This machine is used for preparing the standard specimens for ring crush test or others. the precise cutting mechanism with a sharp blade is helpful to make your specimen easily

    本機專門切取環測試用之試樣,使用高精度刀模,取出之試整無毛邊,可將測試誤差至最低
  7. In order to conquer the shortcoming of general pwm forcibly switch technology, it takes advanced soft switch technology to recede the switch spoilage of power component and will be benefit to improve the frequency of switch electroplating power and raise the control precision and smooth of the output voltage and current of the electroplating power. it designs a digital software electroplating power that bases on the 80c196mc and epld ( erasable programmable logic device )

    為了克服常規pwm硬開關控制技術的缺陷,本文採用先進的軟開關技術,大大低了功率開關器件的開關損耗,提高了電鍍電源的開關頻率,改善了輸出電源電和電流的滑性與控制精度,採用基於80c196mc單機與可擦除可編程邏輯器件epld組成的全數字化控制系統,研製了一臺軟開關電鍍電源。
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