隔離工藝 的英文怎麼說

中文拼音 [gélígōngyì]
隔離工藝 英文
isolation technology
  • 隔 : partitionseparate
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 工 : Ⅰ名詞1 （工人和工人階級） worker; workman; the working class 2 （工作; 生產勞動） work; labour 3 ...
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  • 隔離 : keep apart; isolate; segregate; isolation; isolated; apartheid; enclosure; enisle; severance; seg...
  1. The method of obtaining high concentration of na2feo4 solution by quick electrolysis mainly contains four aspects : adoption of either a diaphragm or an ionic membrane electrolytic cell in which a thin anodic cell lying between the two cathodes, ( 2 ) using an iron anode that has larger specific surface area, ( 3 ) keeping suitable concentration of naoh in the anodic cell, adoption of lower current density and higher electrolyzing speed. the practical technique parameters follow a s below : the naoh solution of 14 - 16mol / l, the temperature of 303 - 308k, the surface anodic current density of 300a / m2, the unit electrolyzing speed of efficiency larger than 6. 0a / l

    快速電解獲取高濃度na _ 2feo _ 4溶液的方法，主要包括四個方面：採用兩陰極室夾一厚度較小的陽極室的隔膜（或離子膜）電解槽；使用比表面積較大的鐵網陽極；保持陽極室中有適宜濃度的濃naoh溶液；採用較低的電流密度和較高的電解速度。具體工藝參數是： 14 16mol / lnaoh溶液、溫度303 308k 、表觀陽極電流密度300a m ~ 2 、有效單位電解速度6 . 0a / l 。
  2. The effect of overburden separation dynamic development under key stratum on grouting for bed separation space was analyzed, in order to deal with the problem that the current bed separation growing technology can not prevent the key stratum from breakage, put forward the isolated section - grouting technology for overburden bed separation space, integrated the virtue of growing for bed separation space and partial extraction, the bed separation grouting bodies, key stratum and isolated section pillars were made to constitute the load - carrying body all together, and to reach the purpose of reducing subsidence effectively, increase the coal seam extraction ratio, and accelerate the development of isolated section - growing technology for overburden bed separation space

    摘要分析了關鍵層下離層動態發育對離層充填的影響，針對目前離層區充填工藝不能阻止覆巖關鍵層初次破斷的問題，提出了「覆巖離層分區隔離注漿充填」技術，它綜合離層充填與條帶開采技術的優點，通過離層區充填置換或減小分區隔離煤柱寬度，使「離層區充填體關鍵層分區隔離煤柱」形成共同承載體，從而達到有效減緩地面沉降的目的，提高了煤層采出率，促進了覆巖離層充填減沉技術的發展。
  3. The effect of compound casting technology and compound modification on the properties of high speed steel roll collar was studied. the results showed that compound high speed steel roll collar with high and even hardness and good bond between outer and inner layers could be gained when the modified colbalt free high speed steel in outer layer and nodular iron inner layer in connection with appropriate rotational speed of centrifugal machine, pertinent pouring interval between two kinds of the melt and moderate pouring temperature as well as surface induction heat treatment were chosen. it is indicated in industrial use that the service life of compound roll collar is higher by 5 times than that of high chromium cast iron collar

    研究了離心復合鑄造工藝和復合變質處理對高速鋼輥環性能的影響，結果表明，選用變質高碳無鈷高速鋼作外層，用球鐵作內層，選擇合適的離心機轉速、兩種金屬熔液澆注間隔時間和澆注溫度，結合採用表面感應熱處理工藝，可獲得硬度高、均勻性好、內外層結合良好的高速鋼復合輥環，用於工業生產其使用壽命比高鉻鑄鐵輥環提高5倍以上。
  4. A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented. the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors. the substrate pn junction can be realized in standard silicon technologies without additional processing steps

    提出了一種新的方法來減小硅襯底損耗提高集成電感的q值：在硅襯底形成間隔的pn結隔離以阻止渦流減少損耗，這種方法工藝簡單且與常規硅集成電路工藝兼容。
  5. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  6. The influence of different process on gaas mesfet sidegating effect has been studied. these process include recessed - gate process, planar selectively implanted process and planar boron implanted process

    本文對分別採用隔離注入挖槽、平面自隔離和平面離子注入隔離三種工藝制備的gaasmesfet旁柵效應進行了研究。
  7. In this paper, the research of the dielectric isolation of over - 20 m - film soi is concentrated on the structure, technology and experiment

    論文對硅膜厚度大於20 m的soi介質隔離問題從結構、工藝和實驗三個方面進行了深入研究。
  8. Results show that the sidegating threshold voltage is higher when adjacent devices are isolated by boron implanted, which means that boron implantation significantly improves the electronical isolation between devices and reduces the sidegating effect

    結果表明，採用注入隔離工藝制備的mesfet的旁柵效應比採用自隔離工藝制備的mesfet的旁柵效應要小。這說明，採用注入隔離可以形成更好的器件隔離，減小器件的旁柵效應。
  9. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  10. Improvement of fabrication and installation technology for the

    系列隔離開關垂直連桿安裝工藝改進
  11. This product adopts oem pressure transducer with stainless steel isolation diaphragm as signal measure element and automatic testing by the computer. using laser adjustment resistant technology carries on temperature compensation to zero point and sensibility in width temperature scope

    該產品採用帶不銹鋼隔離膜片的oem壓力傳感器作為信號測量元件並經過計算機自動測試，用激光調阻工藝進行了寬溫度范圍的零點和靈敏度溫度補償。
  12. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  13. We have advanced equipment and craft, scientific enterprise internal management, and perfect quality assurance system. we are specialized in producing the fence used in highway and railroad, all kind of fence used by factory and mining enterprise, heterogeneous mesh, frame mesh, as well as construction decorative mesh, and we also contracts the soak processing service of wire mesh and installment project of the isolation fence and wire fence, our product sells to all over the world

    本公司的設備工藝先進，企業內部管理科學，質量保證體系健全，專業生產高速公路鐵路護欄網，各種廠礦企業圍欄，各種異型網框架網，以及建築裝飾網片，並承攬各種金屬網浸塑加工業務和隔離網護欄網的工程安裝，產品銷往全國各地。
  14. This thesis mainly analyze the structure of switch the circuit ' s form and some of manufacturing technic. under the given frequency band, the switch has flat capability of insert loss and isolation, and can satisfy the need of millimeter - wave system

    本課題主要對開關的結構、電路形式及製作工藝等方面進行了一定的分析，使得毫米波鰭線pin管開關在給定頻率范圍內，具有平坦的插入衰減和隔離度特性，滿足毫米波系統的需要。
  15. After a lot of experiments, we have found the most appropriate material and the best proportion of the two components for the type of the high - voltage isolation optocouplers are found, and concluded some original creative operation processes and rules for encapsulation technique of the high - voltage isolation are concluded the author has done some deeply research in the field of the series of the high - voltage isolation optocouplers, enlarged the application of the optocoupler and

    5 、對高壓隔離特性類光電耦合器的工藝製作、測試方法作了詳細的介紹;通過大量的實驗，找到合適的介質填充材料以及最佳的組分配比，制定灌封工藝操作詳細規范。目前，國外仍無該類型的器件面世，國內也沒有其它的單位在此領域有過或正在深入的研究。
  16. The status and prospect of the material and processing forplastic beer bottle at home and abroad are introduced. the new fruits as well as pacvd techniqne and nano - polymer to improve the barrier property are described. it will be a great foreground that the plastic beer bottle is domestically developed

    介紹了國內外製造塑料啤酒瓶的材料及其加工工藝的現狀和發展前景，提出了用pacvd （等離子輔助化學氣相沉積）技術與納米聚合物提高啤酒瓶阻隔性的新成果，指出在國內發展塑料啤酒瓶包裝的偉大前景。
  17. The calculated density of mgf2 with iad was increased from 0. 70 for conventional process to 0. 97. meanwhile we find that the spacer layer has a great influence on the spectral shift. the further the layers are away from the spacer, the less the effect ; in the same way, the iad reduces the spectral shift of nb205 / sio2 narrow band interference filters from 29. 4nrn to 12. 4nm ; the iad reduces the spectral shift of tio2 / sio2narrow band interference filters from 24. 7nm to 8. 4nm

    同時發現間隔層對光譜漂移的影響最大，越遠離間隔層的膜層，其影響越小；而nb _ 2o _ 5 sio _ 2多層膜窄帶干涉濾光片漂移從常規工藝的29 . 4nm降到12 . 4nm ； tio _ 2 sio _ 2多層膜窄帶干涉濾光片漂移從常規工藝的24 . 7nm降到8 . 4nm 。
  18. 8k series intelligent digital light column display controller, this series products adopt surface package modularization craft, output loops all adopt photoelectric isolation, independently supply, have improved anti - reference ability

    8k系列智能數字光柱顯示控制儀本系列產品採用表面封裝模塊化工藝，輸出迴路均採用光電隔離，獨立供電，提高了抗干擾能力。
  19. Secondly, a novel technology is proposed which includes several key steps such as lpcvd ( low pressure chemical vapor deposition ) nitride silicon and cmp ( chemical mechanical polishing )

    其次，設計包含低壓淀積氮化硅和化學機械拋光（ cmp ）等關鍵步驟的新的soi介質隔離工藝流程。
分享友人
分享到 Line

分享到臉書