隔離擊穿 的英文怎麼說

中文拼音 [gélíjīchuān]
隔離擊穿 英文
isolation breakdown
  • 隔 : partitionseparate
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  • 隔離 : keep apart; isolate; segregate; isolation; isolated; apartheid; enclosure; enisle; severance; seg...
  1. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  2. Then the ideal models ( dielectric isolation structure with high - voltage interconnection and without high - voltage interconnection ) are simulated by a 2d device simulator medici respectively. according to the simulation results, the two models ’ breakdown mechanism is analyzed and compared, and the influence of the isolated trench structure parameter on breakdown - voltage is studied, synchronously

    藉助二維數值模擬軟體medici對理想模型（有、無高壓互連線兩種情況的介質隔離結構）進行模擬，分析其耐壓機理，研究隔離槽參數（槽寬、槽內氧化層厚度）對擊穿電壓的影響。
  3. Firstly, the deep trench dielectric isolation structure is designed, and a mathematical model of the breakdown - voltage is given

    首先設計厚膜soi基深槽介質隔離結構，經過分析得到擊穿電壓的數學模型。
分享友人
分享到 Line

分享到臉書