隧穿 的英文怎麼說
中文拼音 [suìchuān]
隧穿
英文
tunneling-
Quantum radiation of dilaton - maxwell black hole as tunneling
黑洞的量子隧穿輻射Quantum tunnelling time of cold atom passing through a laser beam
冷原子穿越激光束的量子隧穿時間The hawking radiation of colored black hole as quantum tunneling
通過量子隧穿研究帶色荷黑洞的霍金輻射Quantum tunneling of bose - einstein condensates in optical lattices
愛因斯坦凝聚體在光勢阱中的量子隧穿Quantum tunneling and macroscopic quantum effects in molecular magnets
分子磁體中的量子隧穿及宏觀量子效應Thermally assisted quantum tunneling in a uniaxial ferromagnetic particle in transverse magnetic field
單軸鐵磁顆粒激發態的熱助量子隧穿Investigation on macroscopic quantum tunneling phenomena under the role of the rotating perturbations is made in the other part of the dissertation
論文的另一部分工作討論有旋轉的微擾作用下的bec系統的宏觀量子隧穿現象。P - well si sige - based resonant tunneling diode dc parameters
共振隧穿二極體及其直流參數提取Frequency characteristics and analysis of quantum resonant tunneling diodes
量子共振隧穿二極體的頻率特性與分析In 1995, the experiment of resonant tunneling diode in a magnetic field tiled by an angle with respect to the tunneling direction was accomplished by t. fromhold and b. willkinson etc. subsequently, e. e. narimanov and a. d. stone have theoretically studied this system with the square - potential well model
例如， 1995年， t . fromhold和b . willkinson等人所做的傾斜磁場作用下的共振隧穿二極體實驗，以及后來由e . e . narimanov和a . d . stone等人採用方勢阱模型進行的理論研究。Firstly, i provide a brief review of the previous achievements and investigations on the low - dimensional quantum devices and semiconductor superlattice, in which some principal theories such as bloch oscillations, wannier - stark ladder, zener tunneling and related progress in experiments are introduced
首先綜述了過去三十年低維量子器件與半導體超晶格的發展與相關研究，介紹了bloch振蕩、 wannier - stark臺階、 zener隧穿等關鍵理論以及相關實驗方面的進展，並引入簡化模型：緊束縛模型與單帶模型。The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。Packet data service - tunneling of signaling messages
分組數據業務.信令消息的隧穿So a conclusion can be got that the annealing in n2 raises the la2o2, stability. 3. the exact solution and wkb approximation are compared, the exact solution agrees with the wkb approximation in calculating the mono - layer sio2 tunneling current, but the wkb approximation is inappropriate for the dual layer oxide - lanthanum structure, while the exact algorithm can give a exact result
比較了wkb和精確解法計算柵介質隧穿電流的方法，精確解法在解決單sio _ 2層和wkb準經典近似有相同的結果，但是wkb不適合計算la _ 2o _ 3 / sio _ 2雙層柵介層的隧穿電流，而精確解法能精確地計算雙層柵介質隧穿電流。Effect of spin - orbit coupling on the transport properties in ferromagnet semiconductor insulator heterojunction
絕緣體多層膜結構中隧穿性質的影響Therefore, it is an efficient way to dilute cro2 granules for enhancing extrinsic mr, due to the formation of new metal - insulator microstructure, which adjusts natures of barrier. in much of work published, much interest involves the fabricating technique and magnetotransport of cro2 ferromagnet, experimentally
因此，採用cro _ 2 -絕緣顆粒復合的方法，以形成新的微結構來調整顆粒界面狀態和隧穿勢壘性質，是降低外磁場、增強外稟磁電阻效應的有效手段。It is the main purpose of this paper to calculate the energy splitting of ground state and excited states induced by thermally assisted quantum tunneling. first, a brief introduction is given for the theoretical and experimental studies on the magnetic macroscopic quantum effects. then, spin tunneling in a uniaxial ferromagnetic particle in transverse magnetic field is converted to a pseudoparticle moving in effective double - well potential with the help of the effective potential description of quantum spin systems developed by ulyanov and zaslavskii. finally using the periodic instanton method we evaluate the transition amplitude, energy shift and prefactor of wkb exponential and the energy splitting of ground state and the tunneling rate for excited states induced by thermally assisted quantum tunneling are obtained
文章首先對磁性宏觀量子效應的理論和實驗方面作了簡單介紹，然後藉助于ulyanov和zaslavskii發展的一種等效勢描述方法，把外磁場沿難磁化軸方向時的自旋隧穿約化成在等效雙勢阱中運動的粒子，利用瞬子方法給出基態能級劈裂，最後利用周期瞬子方法分別計算了隧穿幅、能級移動以及wkb前因子，從而給出由於熱助量子隧穿引起的激發態的隧穿率。With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded
當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。Hot electron tunneling mechanism of current collapse in gan hfet
溝道熱電子隧穿電流崩塌模型Quantum capture is a complicated process and capture time computation and experiment test are provided. it is difficult to ascertain carrier ' s transportation and distribution in multiply quantum wels and tunneling time and heating emitting time computations are also provided. optical gain whose formula is complicated is a critical parameter and it is useful for structuring model to obtain a concise formula by means of experiment curve
詳細說明了確定半導體激光器速率方程的一些重要參量的方法，如：載流子在三維sch區的輸運行為對激光器的調制特性有較大影響；量子阱對載流子的捕獲是一個復雜的過程，文中給出了量子捕獲時間的計算方法以及實驗證明；多量子阱中載流子輸運與分佈也是相當復雜的問題，文中給出了隧穿時間與熱發射時間的計算方法；光增益是關鍵的參量，它的解析式相當繁瑣，由實驗曲線擬合其較為簡明的經驗式，對定模工作是有利的。分享友人