隨從護士 的英文怎麼說

中文拼音 [suízòngshì]
隨從護士 英文
attendant nurse
  • : Ⅰ動詞1 (跟; 跟隨) follow 2 (順從) comply with; adapt to 3 (任憑; 由著) let (sb do as he li...
  • : 動詞1. (保護; 保衛) protect; guard; shield 2. (袒護;包庇) be partial to; shield from censure
  • : 名詞1 (古代指未婚的男子) bachelor (in ancient china)2 (古代介於大夫和庶民之間的階層) a soci...
  • 隨從 : 1. (跟隨) accompany (one's superior); attend 2. (隨員) retinue; suite; entourage; attendants
  • 護士 : nurse
  1. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面:首次採用硅( 100 )襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子,通過退火處理成功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )劑量的氧離子,后在氧化層的保下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,分析了其原因是ge揮發( ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛)和ge擴散( ge穿過離子注入形成的氧化埋層而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路,二是可以通過控製表面氧化來調節安止額淤丈撈要表面sige層中的ge組分,而部分解決sige
  2. Familiar : the wizard ' s familiar continues to increase in power. starting at level 21 the familiar ' s natural armor increases by + 1, and every two levels after

    魔寵:法的魔寵將等級繼續增強。21級后魔寵的天然甲每2級得到+ 1的獎勵。
  3. Familiar : the sorcerer ' s familiar continues to increase in power. starting at level 21 the familiar ' s natural armor increases by + 1, and every two levels after

    魔寵:術的魔寵將等級繼續增強。21級后魔寵的天然甲每2級得到+ 1的獎勵。
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