雜質半導體 的英文怎麼說

中文拼音 [zázhíbàndǎotǐ]
雜質半導體 英文
defective semiconductor
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".

    當半導體中加入了施主感受主雜質，我們就說該物質「摻雜」了。
  2. Semiconductors containing such impurities are called p-type semiconductors.

    含有這類雜質的半導體叫做P型半導體。
  3. The major research interest covers a broad range of topics concerned with the fundamental properties of shallow - levels in semiconductors and with impurity related issues of importance to semiconductor physics and technology, e. g., single and multiple donors and acceptors, shallow excited states of deep - level impurities, defect interaction on the atomic scale such as impurity - pair or complex formation

    主要研究方向涵括半導體物理與技術方面有關雜質之重要領域，例如施者與受者雜質、淺與深雜質、雜質能階、雜質光譜、雜質與雜質或缺陷相互間之交互作用，以及復合雜質之形成與特性等。
  4. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  5. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片，將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術，具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點，可有效解決單片光電集成器件（ oeics ）中光、電兩部分的工藝兼容這一難題。
  6. Donor states in semiconductor quantum wells

    半導體量子阱中施主雜質態研究
  7. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  8. The band structure reveals the form of the impurity levels due to the substitutional impurity in semiconductors

    摻雜模型的能帶結構顯示，由於在半導體母體中進行雜質原子取代而形成了雜質能級。
  9. When the electrical characteristics are dictated by impurity atoms, the semiconductor is said to be extrinsic semiconductors

    如果半導體的電學性質歸因於其中的雜質原子，那麼它將被稱為雜質半導體。
  10. Owing to the exchange and interaction between electrons of based semiconductor gaas and magnetic impurity mn, this kind of material combines the functionality of semiconductors with that of magnetic compounds, which shows particular structural, electrical and magnetic properties. so this material is promising in the application

    由於這類材料中的基質半導體gaas與磁性雜質原子mn中電子之間的相互轉移及相互作用而使得這類材料兼有半導體及磁性化合物的特點，並在結構、電性質及磁性質等方面表現出一些獨特的性質，因而具有巨大的應用潛力。
  11. Testing of materials for semiconductor technology ; determination of impurities in carrier gases and dopant gases ; determination of c - c - hydrocarbons in nitrogen by gas - chromatography

    半導體工藝材料的檢驗.運載氣體和摻雜劑氣體中雜質的
  12. Scaling of hydrogenic impurity binding energy and virial theorem in semiconductor quantum wells and wires

    半導體量子阱和量子線中雜質束縛能的度規法則與維里定理
  13. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  14. Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc. because c - bn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ c - bn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ c - bn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  15. Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc., because cbn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ cbn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ cbn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  16. A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes

    摻雜質，摻質劑加入純半導體材料中的少量硼等物質，用於晶體管和二極體中以改變半導體的導電率
  17. In the past 20 years, impurity state in low dimensional semiconductor structures have been studied extensively. impurites play an important role in the transport properties and optical properties of these structures

    自80年代以來，低維半導體材料中雜質態的各種性質引起人們的廣泛關注，雜質對于材料中的電子輸運及光學性質都有重要影響。
  18. In the past 20 years, hydrogenic impurities in low dimensional semiconductor structures have been studied extensively. impurities play an important role in the transport properties and optical properties of these structures

    自80年代以來，低維半導體材料中雜質態的各種性質引起了人們的廣泛關注，雜質對于材料中的電子輸運及光學性質都有重要影響。
  19. The magnetic atoms doped are called magnetic impurities and the nonmagnetic semiconductor is called the based material

    其中被摻入的磁性原子稱作磁性雜質，非磁半導體稱作基質。
  20. The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films

    ，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。
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