雜質擴散 的英文怎麼說

中文拼音 [zázhíkuòsǎn]
雜質擴散 英文
impurities diffusion
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 擴 : 動詞（擴大） expand; enlarge; extend
  • 散 : 散動詞1. （由聚集而分離） break up; disperse 2. （散布） distribute; disseminate; give out 3. （排除） dispel; let out
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. Field observations and physical models may be used to investigate pollutant transportation and dispersion within urban canyons and validate numerical models. on the other hand, validated numerical models are often applied to simulate in detail atmospheric dispersion within the urban canopy. the numerical results in combination with physical model and or field data may be used to assess urban air quality and support decisionmaking for pollution control strategies and traffic planning

    外場觀測和物理模擬可以考察街谷內污染物的傳輸擴散規律並對數值模式進行檢驗，另外，復雜的數值模式則可對城市冠層內大氣擴散問題進行詳細模擬，數值模擬和外場觀測及物理模擬相配合，可用於環境質量評價污染控制決策及交通規劃。
  2. Field observations and physical models may be used to investigate pollutant transportation and dispersion within urban canyons and validate numerical models. on the other hand, validated numerical models are often applied to simulate in detail atmospheric dispersion within the urban canopy. the numerical results in combination with physical model and or field data may be used to assess urban air quality and support decision ? ? making for pollution control strategies and traffic planning

    外場觀測和物理模擬可以考察街谷內污染物的傳輸擴散規律並對數值模式進行檢驗，另外，復雜的數值模式則可對城市冠層內大氣擴散問題進行詳細模擬，數值模擬和外場觀測及物理模擬相配合，可用於環境質量評價污染控制決策及交通規劃。
  3. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  4. Although a dual - mode scramjet ' s configuration is simple and mainly consists of inlet, combustor and wake nozzle, its working process is complicated, especially in the combustor, involving a lot of subjects, including hypersonic aerodynamics, combustion chemistry, etc. the inner flow of a combustor is three - dimensional and complicated, including the interaction of shock wave, deflagration, vortex and boundary layer, and so on

    它涉及到高超聲速空氣動力學、燃燒化學、擴散傳質等多門學科；其內部的實際流動是復雜的三維流動過程，充滿著激波、膨脹波、燃燒波、各種渦系、附面層及其相互之間的干擾，因此，燃燒室問題是整個發動機研究的關鍵所在。
  5. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片，將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術，具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點，可有效解決單片光電集成器件（ oeics ）中光、電兩部分的工藝兼容這一難題。
  6. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。
  7. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  8. High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination

    由於金屬雜質原子擴散並沉積在器件的有源區，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。
  9. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  10. This shift became distinct after annealing at 1100, which showed a decrease of the density and was considered that the interstitial impurity had diffused from sio2

    根據現有數據認為退火過后氧化層的密度變小，可能是氧化層內部間隙式雜質擴散出來的結果。
  11. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  12. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  13. The main studies of this thesis have been focused on the mass transport phenomenon in the hollow fiber membrane contactor, including the development of the model of the gas diffusion through the microporous membrane, the analytical solution of the shell side mass transfer differential equation in an orderly packed parallel flow module, the calculation of the shell side flow distribution in a randomly packed module, the estimation of the influence of the random arrangement of the fibers on the shell side mass transfer, and the experiments of the absorption of co2 into water

    膜接觸器是一種通過膜作為兩相之間的分離界面而實現相間傳質的雜化膜過程。本論文主要研究中空纖維膜接觸器的傳質行為，研究內容包括氣體通過微孔膜擴散模型的建立、中空纖維膜均勻分佈的平行流組件殼程傳質微分方程的解析求解、中空纖維膜不均勻分佈組件中流體分佈的數學計算、中空纖維膜不均勻分佈對殼程傳質影響的估算以及co _ 2氣體吸收實驗。
  14. The interstitial atoms of gold diffuse into silicon at a rate several orders of magnitude faster than the group iii and v impurities

    金的填隙原子向硅擴散的速率比iii族和v族雜質快幾個數量級
  15. In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin

    新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。
  16. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  17. Based on the combination of the adjacent diffusion method and the selective smoothing filter, a new anisotropic diffusion algorithm for image enlargement is proposed, which is called as the adjacent diffusion and selective smoothing algorithm ( adass )

    摘要提出了一種新型的各向異性擴散圖像放大的鄰域擴散選擇平滑法（ adass ） ，將鄰域擴散法與選擇平滑濾波器相結合，降低了演算法的復雜度，並提高了圖像的放大質量。
  18. The properties of these doped powders, the microstructure and composition of these rare - earth co - doped tungsten matrices and cathodes have been investigated by size analysis, xrd, sem and edax. the electronic emission performances of these cathodes are measured in uhv electron emission surveyor. aes is adopted to analyze the atom composition and diffusion behavior of active elements on cathode surfaces

    通過粒度分析、 xrd 、 sem 、 edax研究了摻雜粉末的特性、燒結基體和陰極的微觀結構和成分;用動態真空電子發射測試儀對上述陰極進行了電子發射水平的測試;採用aes對陰極表面原子組成和活性物質的擴散行為進行了研究，分析了陰極發射水平與表面原子組成的關系。
  19. The performance of devices is directly decided by the impurity distribution in the diffused region, and the impurity distribution may be affected by the material thermal properties, the mechanism of diffusion, the power of laser and the diffusion time

    激光誘導擴散過程中，基片的熱物理特性、擴散源的擴散機理、激光束的功率大小和擴散時間以及光束的聚焦狀況等等，都會對擴散結果產生重要的影響，而擴散層的雜質分佈情況將直接決定器件的性能指標。
  20. At present, the problem in testing sheet resistance for micro - areas is that probes must be set up at the suitable locations by handwork. in order to know the wafer ' s impurity distributing, we need test many times, so will waste a lot of time. if the wafer ' s diameter would be 300mm, this problem will be more serious. in this paper, image analysis is introduced, through pre - processing and edge picking - up, the probe tips are recognized. then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors. thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity

    這樣，完成200mm （ 8時）圓片雜質的擴散分佈需要對許多圖形進行測試，需要花費很長的時間，當測試300mm矽片時問題就更為突出。本文將圖象與視覺測量系統引入四探針測試系統中，對採集到的原始探針圖像進行預處理、邊緣提取等操作，以便實現探針針尖的識別，然後由電機控制實現探針的自動定位。這樣測試系統可以自動獲得全片的薄層電阻分佈，為超大規模集成電路檢測雜質分佈和擴散的均勻性提供信息。
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