雜質源 的英文怎麼說

中文拼音 [zázhíyuán]
雜質源 英文
impurity source
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. Therdly because of the influence of terrain and geological structure, arenaceous resources of different regions are different in mu us. sands are mainly from riverway in northwest ; from efflorescent cretaceous sandstone on account of higher topography in the middle part of mu us ; and sands resources are intricated in southeast, mainly including riverway sands, sands blown by the wind and embedded sands under so

    3 、毛烏素沙地因受地形和地質構造影響，不同區域的砂質來源情況不盡相同，西北部地區主要為河道沙；中部地區地勢較高，為白堊系基巖裸露而風化成沙；東南部地區沙質來源情況復雜，主要有：現代河道砂、風積沙、也有埋藏在現代壤土之下的出露古沙。
  2. It was suggested that eric - pcr could substitute for rapd in research related to the genetic identification and genetic diversity in auricularia and other edible and medicinal fungi : 2 to a certain extent, genetic differences among auricularia strains tested in this study did not have necessary relativity with their geographical origins respectively ; 3 in this study, genetic diversity in a. polytricha was higher than that in a. auricula : 4 in this study, a. fuscosuccinea had a higher homology to a. auricula than to a. polytricha ; 5 morphological characteristics validated the results from eric - pcr and provided a potential explanation for the higher similarity coefficient between a. auricular and a. fuscosuccinea ; 6 southern hybridization was employed by choosing a strain from a. auricula as a probe which hybridized with a. auricula and a. fuscosuccinea except a. polytricha, further confirming the veracity of the results from eric - pcr ; 7 in this study, isozyme analysis could not cluster the 7 strains from three auricularia species to different groups efficiently ; 8 2 strains from two auricularia species revealed high conservative degree and the restriction fragment patterns by 4 kinds of restricted enzymes showed no diversity

    本研究中，木耳屬2個種的2個菌株在its區域表現出較高的保守性， 4種限制型內切酶的酶切圖譜沒有顯示出多態性；增加內切酶種類及供試菌株數量，有可能獲得具有多態性的限制性內切酶酶切圖譜； 9本實驗中， its區域的真菌特異性引物與真核生物通用引物對于擴增效果無較大差異，擴增片段長度均為650bp左右； 10根據形態學實驗、 eric - pcr實驗以及southern雜交實驗的結果分析，紫木木耳屬種質資源的遺傳鑒定和遺傳多樣性評價耳極有可能是毛木耳種的一個變種; n .本研究中所用的gutc法是一種適用於木耳屬菌株基因組洲a快速提取的方法; 12 .傳統的形態學分類法和現代的分子生物學分類法，兩者的關系是相輔相成，互為驗證
  3. Application of world soybean germplasm resources on crossbreeding

    國內外大豆種質資源在雜交育種上的應用
  4. Wheat flour and durum wheat semolina. determination of impurities of animal origin

    小麥粉和硬質小麥的細粒澱粉質胚乳.動物源雜質的測定
  5. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  6. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。
  7. This machine equal to a combination of one sealed horizontal waterpower pulp thick liquid machine and one light & heavy impurity of removing the dregs device with compact structure and high efficiency. including break to pieces, remove mixing and screen etc, this machine simplify the procedure of dealing with wasted paper greatly, and has reduced energy consumption

    本機相當於一臺密封臥式水力碎漿機與一臺輕重雜質除渣器的組合體，結構緊湊，效率高，本機集碎解、除雜、粗篩等功能於一體，大大簡化了廢紙處理流程，降低了能源。
  8. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  9. 11 never vent hydrogen from a high pressure source such as a cylinder in order to remove contaminants. always use an external source of nitrogen or air for this purpose

    決不允許為了吹除雜質從高壓氣源，例如氣瓶中放出氫氣。做類似事情時，只能用氮氣或空氣作為外在氣源。
  10. High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination

    由於金屬雜質原子擴散並沉積在器件的有源區，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。
  11. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  12. As for the pl mechanism, except the red band, the rest are all originated from luminescence defects related to impurity, and the luminescence centers are affected by configuration of impurities, while the red emitting band may attribute to the quantum confinement effect of nano - si, but will also rely on its interface characteristic

    就發光機制而言，除紅光寬帶外，均起源於氧、氮摻雜引起的缺陷發光中心，發光中心受雜質組態影響，紅光寬帶可能聯繫到量子限制效應，同時還依賴于界面特性。
  13. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  14. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  15. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  16. After hybridization between wild rice with high disease resistance and high heritability and cultivated rice with high yield and other good agronomic characters according to the breeding aim, new quality germplasm could be promptly obtained by anther culture and then strictly selection

    按育種目標選擇抗病力強，傳遞力高的野生稻與豐產、農藝性狀優良的栽培稻雜交，通過花藥培養並對後代實施嚴格選擇，可迅速獲得新的優質源。
  17. Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device. one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation

    所以需要減小有源區中金屬雜質的濃度，通常採用吸除的方法把金屬雜質從器件有源區吸收到有源區之外預先形成的sink （陷阱）中。
  18. Metal impurities unintentionally introduced into si wafers during various device process steps are very harmful to device performances. many gettering techniques have been widely studied to overcome these problems by removing metal impurities from the active region of a device. reduction in device size and introduction of new moralization processes require more efficient gettering techniques working at lower temperatures

    半導體工藝中無意引入的金屬雜質的污染會極大損害器件性能，為了將金屬雜質從器件的有源區吸除，吸雜技術被廣泛的研究，器件尺寸的不斷縮小和新的金屬化工藝的不斷出現更需要能在低溫有效吸除的技術。
  19. The performance of devices is directly decided by the impurity distribution in the diffused region, and the impurity distribution may be affected by the material thermal properties, the mechanism of diffusion, the power of laser and the diffusion time

    激光誘導擴散過程中，基片的熱物理特性、擴散源的擴散機理、激光束的功率大小和擴散時間以及光束的聚焦狀況等等，都會對擴散結果產生重要的影響，而擴散層的雜質分佈情況將直接決定器件的性能指標。
  20. The research work in this dissertation involves the basic theory and realization process of auralization, fem modeling, fem modeling based on complex sound source, error estimation and afem modeling, fulfillment steps of sound parameters simulation and auralization software

    本文研究涉及到可聽化基本原理及實現，有限元建模，基於復雜聲源的有限元建模，誤差分析及自適應有限元建模，音質參數模擬和雙耳可聽化的軟體實現方法等。
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