雜質濃度 的英文怎麼說

中文拼音 [zázhínóngdù]
雜質濃度 英文
concentration, impurity
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 濃 : 形容詞1. （液體或氣體中所含的某種成分多; 稠密） dense; thick; concentrated 2. （程度深） （of degree or extent） great; strong
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  • 濃度 : potency; thickness; concentration; consistence; strength; consistency; density
  1. The method of concentrating the decoloration solution of tylosin is usually carried out by thin film vacuum concentration. in this experiment, the concentration process is modified by using the nanofiltration membrane technique which is free from corrosive due to the extractant solvent and in the same time, heating and decomposition of the antibiotic are eliminated, the concentration course ia also distinctly shortened. in this process the small molecule can be filtered by water, and the quality of the product such as, the tyramine content, the solubility of the product, improved significantly. in addition, the membrane filtration process could save consumption of steam and cooling water

    泰樂星提煉過程中原工藝脫色液用薄膜真空濃縮，本試驗改進為耐溶媒納濾膜濃縮，料液不需要加熱即可濃縮，防止了料液的高溫分解破壞，濃縮收率明顯提高在濃縮的同時，部分小分子雜質可以隨水分子一起通過納濾膜而除掉，成品質量明顯提高，解決了用原工藝成品酪胺、溶解度不合格的質量問題省去了原工藝濃縮中費用較高的蒸汽、冰鹽水，經濟效益可觀。
  2. Some cubic perovskites are good cases in point such as srtio3 and ktao3. experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration, the impurity induced ferroe lectric phase transition occurs

    Srtio _ 3和ktao _ 3是典型的量子順電體，實驗表明當兩者分別摻雜ba ~ （ 2 + ）和li ~ +且雜質濃度超過各自的臨界濃度時，順電相不再穩定，出現由雜質導致的鐵電相變。
  3. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。
  4. A series of preparation conditions and parameters were systematically studied. it is concerned that the effects of prepared method of precursor, material synthesize method, fired atmosphere, fired temperature, fired time, flux kind and content, rare earth concentration and kind and matrix on the microstructure and optical storage properties of the samples. at the same time, the optical storage mechanism was discussed in certain extent

    系統地研究了一系列的工藝條件及參數，討論了前驅物制備方法、材料合成方法、灼燒氣氛、灼燒溫度、灼燒時間、助熔劑種類及含量、稀土摻雜濃度及種類、基質成分對樣品微觀結構及光存儲性能的影響，同時對樣品的光存儲機理作了一定程度的探討。
  5. The labour department has published the " code of practice on control of air impurities ( chemical substances ) in the workplace " and " a simple guide to health risk assessment - office environment series " that set out recommendations for employers on how to control ozone concentrations and the ozone concentration standards for the workplace

    該處發出了《控制工作地點空氣雜質（化學品）的工作守則》及《職業健康風險評估簡易指南辦公室環境系列》 ，向僱主建議控制臭氧濃度的措施，並列出工作環境的臭氧濃度標準。
  6. Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance. the formation theory of aluminum - alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed

    比較了兩種商業太陽電池的雜質濃度分佈及結深情況；敘述了鋁背場的作用及形成原理，對影響鋁背場表面濃度和結深的參數作了分析。
  7. This paper probes into some measures for the safety in production from three aspects of doing well the ceiling management of the mining face with complex geological structure, controlling strictly the gas density and spark origin in the mining face, and strengthening the safety training

    從做好地質構造復雜工作面的頂板管理、嚴格控制井下工作面瓦斯濃度和引爆火源、加強安全培訓工作3個方面探討了安全生產的措施。
  8. Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

    用光致發光光譜法測定硅晶體中雜質濃度的試驗方法
  9. Phenol concentration, impurities, and chp contents are analyzed using highly automated liquid and gas chromatography

    酚濃度，雜質和chp內容被分析高度地使用自動化液體和色相色層分析法。
  10. The influence of y _ 2o _ 2s : eu phosphors fluorescent spectra, chroma and luminescence intensity is systematically studied when different concentration of europium is adulterated into different phosphors by means of xrd, fluorescent spectra analysis, time - basing spectra analysis, long - persistent fluorescent spectra analysis and so on ; the influence on y2c > 2s : eu phosphors structure, luminescence intensity and long - persistent curve is investigated when different concentration of mg24 " > ti4 " 1 " is adulterated into different phosphors, finding the most suited concentration of mg2 " * ti4 " 1 " ; base on the suited concentration of mg2 + > ti4 +, the influence rule on phosphors luminescence intensity and long - persistent curve with changing of eu + concentration is also studies. at the same time, by using rare - earths metals adulteration and theory of chroma synthesis, the possibility of sensitized buildup of phosphors and the synthesis of different color long - persistent phosphors is also researched

    應用x射線粉末衍射（ xrd ） 、熒光光譜、時間分辨光譜及磷光體長余輝壽命測試等綜合實驗手段，較系統地研究了摻雜eu對熒光體y2o2s ： eu熒光體的發光光譜、色度和發光強度的影響；研究了不同mg ， ti含量對磷光體基質結構性能、發光強度與余輝曲線的影響及其適宜的摻雜濃度；基此，研究了在給定mg ， ti含量時，不同eu摻量對磷光體發光強度和余輝的影響規律；從稀土摻雜和色度合成原理分別探討了eu的發光敏化增強和制備不同光色長余輝磷光體的可能性。
  11. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  12. In the investigations of the nanosized zirconia powders co - doped with yb3 + - 0. 2 ( 0. 4, 1 ) mol % tm3 + ions under 980nm ld excitation, the blue up - conversion emission at 474nm comes from the 1g4 - 3h6 transition

    詳細研究了鉺離子摻雜二氧化鋯納米材料的上轉換發光性質，得到：在低摻雜濃度（不大於1mol ）下，鉺離子主要發綠光。
  13. Based on advanced technology, this thesis bring forward the optimal scheme and set down general system - drawings and flow charts. using step7 - micro software, we achieve the auto - control aim in drinking water treatment. in practice, the complexity and non - linaerity exit in the system of water treatment, so we apply fuzzy control in water treatment and design a kind of controller which structure can be altered according to the using - rate of ozone and the variety of water quality

    實際飲用水處理系統由於存在復雜性、非線性、時變性，本文根據臭氧生物活性炭水處理工藝存在復雜性、非線性、時變性等特點，將模糊控制應用在水處理這一不確定的非線性時變系統，針對不同水溫下臭氧利用率及水質的變化，設計一種基於系統過程狀態的變結構的模糊控制器，以單片機作為主要控制硬體，按查表方式設計軟體，對進水閥門開度進行在線控制，調節臭氧氣體與進水的比例（臭氧流量及濃度不變） ，達到氣水比最優化。
  14. Abstract : plant responses to salt stress via a complex mechanism, including sensing and transducing the stress signal, activating the transcription factors and the corresponding metabolizing genes. since the whole mechanism is still unclear, this review emphasize the biochemical events during the plant adaptation to salt stress referring to an index of importance : the homeostasis in cytoplasm, the biosynthesis of osmolytes and the transport of water. most of these biochemical events were elucidated by study of halophyte and salt - sensitive mutations, also many important genes involved were cloned and used to generate stress - tolerance phenotypes in transgenic plants. on the other hand, about the molecular mechanism in signal transduction, the research of arabidopsis mutations and yeast functional complementation provided helpful traces but not full pathway

    摘要植物對鹽脅迫的耐受反應是個復雜的過程，在分子水平上它包括對外界鹽信號的感應和傳遞，特異轉錄因子的激活和下游控制生理生化應答的效應基因的表達.在生化應答中，本文著重討論負責維持和重建離子平衡的膜轉運蛋白、滲調劑的生物合成和功能及水分控制.這些生理生化應答最終使得液泡中離子濃度升高和滲調劑在胞質中積累.近年來，通過對各種鹽生植物或鹽敏感突變株的研究，闡明了許多鹽應答的離子轉運途徑、水通道和物種特異的滲調劑代謝途徑，克隆了其相關基因並能在轉基因淡水植物中產生耐鹽表型;另一方面，在擬南芥突變體及利用酵母鹽敏感突變株功能互補篩選得到一些編碼信號傳遞蛋白的基因，這些都有助於闡明植物鹽脅迫應答的分子機制。
  15. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  16. In this paper, we first investigate the impurity effect ( ba2 + ) on the dielectric and phase transition properties in srtio3 within the framework of the transverse - field ising model ( tim ). then a possible coupling mechanism between the magnetism and dielectric properties in eutio3 is discussed and the magnetic influence on the frequency of the soft - phonon mode is investigated via the heisenberg model, soft - mode theory under the mean field approximation, the second quantization theory and the perturbation theory. and we proceed further investigation on eu1 - xbaxtio3 of

    我們發現baxeul _ xtio3 （ o 『 x 『 0 . 2 ）的介電常數和由內察的偏置場導致的電極化除了隨雜質濃度產生相應的變化，同時在磁和介電性質的藕合作用影響下在低溫下偏離通常的量子順電體行為，在尼爾溫度附近出現異常，且磁場通過對最近鄰自旋關聯的作用來影響介電常數和電極化。
  17. Test method for residual impurities concentration in microzone of semi - insulating gallium arsenide

    半絕緣砷化鎵剩餘雜質濃度微區試驗方法
  18. Damage annealing and impurity density distribution of as n2 co - implantation si

    的損傷退火及雜質濃度分佈
  19. The epitaxial layer quality of gaalinp has been specified so well by double - crystal x - ray diffraction that there are many and strong interference in the picture

    在摻雜上成功消除mg的記憶效應，使得器件各外延層雜質濃度達到設計的摻雜水平。
  20. The available equipments can not measure the temperature of the substrate in the diffusion process, and so it is necessary to study the 4 - d temperature distribution in the processed region beforehand. the purpose of this work is to theoretically study the laser induced diffusion process, which is performed within a non - homogenous temperature field

    眾所周知，擴散系數是溫度的敏感函數，而現有的實驗裝置無法測得擴散過程中基片內的溫度分佈，因此，為計算雜質濃度分佈，首先需要研究激光照射下半導體基片內的四維溫度場結構。
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