離子損失過程 的英文怎麼說

中文拼音 [lízisǔnshīguòchéng]
離子損失過程 英文
ion loss processes
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 損 : Ⅰ動詞1 （減少） decrease; lose 2 （損害） harm; damage 3 [方言] （用尖刻的話挖苦人） speak sarcas...
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  • 離子 : [物理學] ion
  • 損失 : 1. （失去） lose 2. （失去的東西） loss; wastage
  • 過程 : process; procedure; transversion; plication; course
  1. A significant suppression of phase transitions and lattice changes during cycling is occurred for ti - doped materials, and a decrease of interface reaction activity between the cathode and electrolyte is also demonstrated for ti - doped cathodes. as a result, the capacity losses, which are originated from structural changes and interface reactions during cycling, decrease and thereby cycling life increases for ti - doped materials

    摻欽后，電極材料的離子分佈形式發生變化，引起材料結構中的化學鍵產生變化，電極材料充放電過程中的結構相變得到有效抑制，結構變化相應減小，電極材料在高電位下的界面反應活性也減弱，從而減小了由結構變化和界面反應引起的容量損失，改善了電極材料的充放電循環性能。
  2. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  3. There are distinct changes about shifts or intensity in bulk plasmon, surface plasmon, and interband electron transitions losses as a result of oxidation of specimens, and adsorption and oxidation processes can be studied through these changes. at room temperature, the formation of oxide layers on uranium and uranium - niobium alloys were found to occur rapidly upon exposure to oxygen, and the resultant oxide in each case was near - stoichiometric uo2. due to formation of niobium oxide in uranium - niobium alloys, the diffusion of o ~ ( - ) ( o ~ ( 2 - ) ) and u ~ ( 4 + ) in the interface region was prevented, and the corrosion resistance of uranium - niobium alloys to oxygen is greatly enhanced by alloying with niobium

    研究結果表明：清潔表面鈮和鈾的體等離子體振蕩所造成的電子能量損失的實驗值與理論計算值較為符合；隨著氧化程度的加劇，表面等離子體（ sp ） 、體等離子體（ bp ）以及價帶電子躍遷所造成電子能量損失的譜峰發生了明顯的連續偏移或強度的變化，這些變化可以用來分析鈾及鈾鈮合金的初始氧化過程；室溫下，鈾及鈾鈮合金很容易與氧作用，最終結果，鈾僅氧化為二氧化鈾，另外，在鈾鈮合金氧化過程中，因為有鈮的氧化物存在，不利於氧和鈾在界面擴散，增強了鈾鈮合金抗氧化性能； eels能獲得樣品表面的信息比aes更為表面，更為靈敏，但由於eels的譜線過于集中，主要在幾十ev以內，也有不容易區別和解譜的不足。
  4. Firstly, based on n - s equation, the momentum differential equation （ contained centrifugal force ） is derived by simplification in boundary layer and then integrates the differential equation over the thickness of the boundary layer, the momentum integral equation is deduced. the dimensionless centrifugal factor is introduced, then the solution of the momentum integral equation is obtained. the dimensionless group is introduced to determined separation of boundary layer

    本文首先根據粘性流體力學的一般方程，通過在邊界層內進行量級比較，在所限定的范圍內得到了含有離心力的邊界層動量微分方程並給出其滿足的邊界條件，然後對該微分方程在邊界層內積分得到離心泵葉輪邊界層動量積分方程，在求解過程中引入了無量綱離心因子，並作了相應合理的假設，得出積分方程解的一般表達式，並引入以邊界層動量損失厚度為主要特徵量的無量綱參數對邊界層分離進行評價。
  5. There is a part of beam loss during the course as the neutralization of high - energy particles dragged from the ion source, the deflexion of charged particle on the beam stream and the scraped beam of exceeding beam waist and low density. it is necessary to analyze the beam loss and bring forward a rational project for absorbing beam stream

    將離子源引出的高能粒子進行中性化，再偏轉掉束流中的帶電粒子，將超過束腰半徑、密度較小的束流削除，在此過程中有一部分束流損失，它直接影響加熱功率的因素，因此，對束流損失進行了分析，對損失束流的吸收提出了吸收方案。
  6. This climate make latosol usually as acidic, low levels cation exchanges capacity and low lever base cations, high levels of exchange al, with a high potential for leaching of plant nutrients

    這種氣候條件使磚紅壤成為強酸性土壤，陽離子交換量和鹽基飽和度低，鋁飽和度高，化肥通過淋溶損失過程就更為突出。
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