離子蝕刻法 的英文怎麼說

中文拼音 [lízishíkèfǎ]
離子蝕刻法 英文
ion etching
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 蝕 : Ⅰ動詞1. （損失; 虧耗） lose 2. （腐蝕） erode; corrode Ⅱ名詞（天體現象） eclipse
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  • 離子 : [物理學] ion
  • 蝕刻 : [電學] [冶金學] etch; etching
  1. This paper mainly discusses the designing and testing method to the dds acousto - optic mode locking. it also makes some further analysis on the critical technology - - - - - - the transducer acoustical membrane matching and transducer thinning, which can directly affect the performance of acousto - optic elements. it then analyses the heat effect of acousto - optic elements and the technology of transducer thinning by developing ion - beam sputtering of high frequency acousto - optic elements

    本文重點討論了dds聲光鎖模器的設計及測試方法，討論和分析了影響聲光器件性能的關鍵工藝換能器聲學膜層匹配和換能器減薄工藝，對聲光器件的熱效應進行了測試分析，對離子刻蝕法聲光換能器減薄新工藝作了一定的探討。
  2. A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode

    而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。
  3. Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective

    半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。
  4. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  5. Analyzing the treated yak hairs with sem, xps and et al, it showed under the same conditions, the effect of etching is enhanced with the increasing of power of wave, and the hydrophilicity and dyeing rate enhanced obviously

    通過sem 、 xps及吸附性能等的分析，結果表明，在相同參數的等離子體條件下，隨著產生等離子體的微波功率的增大，對氂牛毛纖維表面的刻蝕效果增強；經過等離子體處理過的氂牛毛纖維的親水性，上染率等都有明顯的提高，說明該方法是一條切實可行的路線。
  6. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  7. This paper discusses the surface etching of polyester thread through application of plasma and alkali deweighting to enhance the size adhesion to polyester thread and improve the abrasion - resistance of the sized polyester thread

    摘要探索了應用堿減量、低溫等離子體處理方法對滌綸股線表面進行刻蝕處理，以改善上漿前滌綸表面界面，增強漿液對滌綸股線的黏附性，提高上漿后滌綸股線的耐磨性的研究。
  8. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  9. The performance of concrete in marine environment is studied thropgh material and x - ray microstructural examination. the uneven distribution of chloride in concrete around the reinforcing bar in fullscale are obtained through ion chromatography method. based on faiadi ' s theory, and chloride ' s influence on passivating film, pre - determine model of reinforcing bar uneven corrosion model was established, which can determine the corrosion amount of the reinforcing bar

    對取自海邊的足尺混凝土梁中縱筋周圍的混凝土進行了氯離子的含量測定，確定了氯離子在鋼筋周圍的不均勻分佈：然後，從法拉第定律和氯離子對鈍化膜的影響入手，建立了鋼筋不均勻銹蝕的模型，可以計算出任意時刻鋼筋的銹蝕量。
  10. Plasma etching has been widely used in the etching process of si devices. now the study is focused on the microfabrication of compound semiconductor

    等離子體干法刻蝕在硅器件的微細加工中已經得到廣泛應用，目前研究的焦點集中在化合物半導體。
  11. The testing results shows that the grating has a very well antireflective characteristic, and the values of testing parameters approximately equals to the designed parameters ". it indicates that the plasma - assisted etching method is very valid to fabricate deep grating

    測量結果發現該光柵具有良好的增透特性，測得的光柵參數和理論設計的參數基本一致，說明等離子體輔助刻蝕是製作深光柵的有效方法。
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