離子轟擊 的英文怎麼說

中文拼音 [lízihōngjī]
離子轟擊 英文
ion bombardment
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 轟 : Ⅰ象聲詞（指雷、炮擊等發出的巨大聲音） bang; boom Ⅱ動詞1 （雷鳴; 轟擊; 爆炸） rumble; bombard; exp...
  • 離子 : [物理學] ion
  • 轟擊 : （用炮火攻擊或用中子等撞擊原子核） bombard; bombardment; shell
  1. Vacuum base plating machine can perform high - voltage bombard function to clean the blank and to make the silver accreting closely

    具有高壓離子轟擊功能，凈化晶片表面，強化鍍銀的附著力。
  2. The crystals were cleaned by argon ion bombardment.

    結晶體由氬離子轟擊而凈化。
  3. C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate

    C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。
  4. To create a mere three atoms of element 118, the scientists spent two months bombarding the californium target with 30 billion billion calcium ions

    為了創造這微不足道的3個原子，科學家花費了2個月時間，用30萬億億個鈣離子來轟擊鐦離子。
  5. Interfacial atoms diffusion or covalence by a circulated - argon ion bombardment process could improve the adhesion strength between the coatings and the uranium substrate

    循環氬離子轟擊鍍方法可促進使膜-基界面原子間的擴散或鍵合，有利於提高膜-基結合強度。
  6. Ion bombardment secondary electron image

    離子轟擊二次電子象
  7. The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron, includes the process of electron - simulated desorption ( esd ), the process of desorption gas ionization and the process of the ion influencing the flashover

    Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎，包含了電子誘發脫附（ esd ） ，和脫附氣體離子化並對閃絡過程產生影響等過程，對表面閃絡現象進行了解釋。
  8. Sputtering is the process in which material is removed from a surface as the result of a bombardment by atoms or ions with energies in excess of about 30ev.

    濺射就是用能量大於30eV左右的原子或離子，轟擊材料表面，把表面上的材料除掉的過程。
  9. Electron impact ion source ; ei source

    電子轟擊離子源
  10. Fast stom bombardment, fab

    快速原子轟擊離子源
  11. Wear resistance of tc11 titanium alloy modified layer treated by ion bombardment processing for dry conditions

    11合金離子轟擊改性層的耐磨性
  12. Silicon wafers are zapped with ions, which form tiny islands with either an excess or a dearth of electrons

    矽晶圓用離子轟擊，而在其上形成微小的島，各自具有過量或是不足的電子。
  13. Since non - uniform electronic emission, poor recovery after ion bombardment and too expensive of sc2o3, scandate cathode has not been vastly used

    但含鈧擴散陰極存在發射均勻性不好、抗離子轟擊性差以及價格昂貴等因素的制約而沒有獲得廣泛的應用。
  14. In the paper, the effect of ion bombarding on nucleation of diamond by negative substrate bias - enhanced was investigated in theory, and some experimental phenomena were explained

    摘要從理論上研究了負襯底偏壓增強離子轟擊對金剛石核化的影響，並用理論解釋了一些實驗現象。
  15. Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film

    第二章和第三章分別從引入離子轟擊和施加直流偏壓電場兩方面著重研究了外界條件作為輔助手段對非晶碳生長的影響。
  16. The mechanisms of diamond nucleation and growth are discussed, and it is believed that the continued ion bombardment during the deposition process is a key factor for the growth of nanocrystalline diamond film using ch4 and h2

    探討了金剛石的核化機制和納米金剛石的形成機制，認為沉積過程中的持續的離子轟擊是ch _ 4和h _ 2體系制備納米金剛石薄膜的關鍵。
  17. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  18. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  19. Electron impact ionization ei

    電子轟擊離子化
  20. Electron impact source, ei

    電子轟擊離子源
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