離子體積 的英文怎麼說

中文拼音 [zi]
離子體積 英文
ionic volume
  • : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : 體構詞成分。
  • : Ⅰ動詞(積累) amass; store up; accumulate Ⅱ形容詞(長時間積累下來的) long standing; long pending...
  • 離子 : [物理學] ion
  1. Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma

    對硅表面的低溫大面氮化
  2. To overcome the bottle - neck, electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed

    為了解決這一問題,電迴旋共振ecr等增強有機金屬氣相沉( ecr - pemocvd )應運而生。
  3. 6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient

    5 、用等增強的化學汽相沉的方法制備了zn3n2薄膜,首次通過熱氧化zn3n2的方法,制備出了受主型載流濃度為1017cm - 3的p - zno薄膜。
  4. Exploding wires phenomenon is that if the high - density energy is poured into metal wire with small transverse section in a short time from high power pulse source, the metal wire will explode into gaseity and generate significant shock wave. the. fundamental reason of the generated shock wave is the plasma

    爆炸絲現象( explodingwiresphenomenon )是將存儲于高壓電容器中的能量,在極短的瞬間內傾注于很小截面的金屬絲,使之汽化,產生強大的沖擊波,這種沖擊波產生的根本原因就是等
  5. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等化學氣相沉( hwp - cvd )方法制備了氫化非晶氮化硅( a - sin _ x : h )薄膜,系統地研究了不同反應氣配比對薄膜特性的影響,得到了沉不同組分a - sin _ x : h的典型實驗條件。
  6. In this thesis, a kind of reversible immobilization method based on the plasma - polymerized film ( ppf ) used for effective immobilization of active bio - molecules and easy reproduction of sensors is developed. the surface of quartz crystal microbalance ( qcm ) is firstly prepared with plasma - polymerized film of butyl amine by glow - charge technique and then covered with a negative - charged polyelectrolyte by self - assembling. through strong electrostatic attraction, antibodies ( antigens ) positive - charged are immobilized for the determination of antigens ( antibodies )

    本論文基於等聚合膜,設計了一種既能固定生物活性物質又易於傳感器再生的可逆固定化方法,即採用輝光放電的等技術,先在石英晶上沉一層正丁胺等聚合膜,再在膜上自組裝一層帶負電的聚電解質,用以靜電吸附固定抗(抗原)測定抗原(抗) 。
  7. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等化學氣相沉( pecvd )和等浸沒注入( piii )技術在聚酯材料表面制備了阻隔碳膜來提高氣阻隔性能。
  8. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質,而且原材料豐富、價格低、無毒、沉溫度低、熱穩定性高,在氫等環境中具有很高的化學穩定性,不易導致太陽能電池材料活性降低。
  9. The thickness of film is frequent non - uniform, and factors are a good many. in practice, the production of uniform - thickness coatings from geometric position in the vacuum chamber

    研究表明,使用等源輔助沉的光學薄膜折射率明顯提高,更加接近於塊狀材料,膜層結構比傳統沉手段更加緻密,附著力也很高。
  10. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉方面,利用高純石墨作靶材,調整薄膜沉過程中的靶基距(燒蝕等密度、能量)和基片溫度,研究實驗工藝對hipib燒蝕等方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響,探討了hipib燒蝕等dlc薄膜的成膜機理。
  11. By film thickness measured, fourier transformed infrared spectrometer ( ftir ) analysis, x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement, the effect of microwave input powers on deposition rates, f / c ratios, bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed

    由於微波功率的改變會導致等中電溫度和等密度發生變化,從而造成不同的源氣分解過程,結果微波功率的升高導致了薄膜沉速率的提高、 f / c比的降低,同時也導致薄膜中cf和cf _ 3基團密度的降低,而保持cf _ 2基團密度接近常數。
  12. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的密度和電溫度,得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室對它們的影響,結果表明密度為10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ,電溫度在4 10ev之間;當頂蓋接地時,該處的等密度明顯大於不接地;在同樣條件下, 50mm高反應室內的密度明顯大於30mm高反應室。
  13. Metal plasma immersion dynamic ion beam enhanced deposition

    金屬等浸沒動態束增強沉
  14. The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules

    結果表明,氣系統中引入氬氣一方面不僅有利於維持低壓放電,而且改善放電狀態,提高反應活性基濃度和活性,提高低溫沉金剛石膜的質量;另一方面,由於其大的電截面使其和電碰撞的幾率大大提高,對等進行冷卻,有利於基片溫度的降低。
  15. Due to great advantage of the excimer laser in photoelectron material, photoelectron technology research, so in this thesis, a xecl excimer laser is designed in order to solve some problem in semiconductor film, cmr film, quartz film and other kind of film application, optical etching field, interaction between laser and material, material plasma study. the parameters of the excimer laser is e also measured and analyzed

    因此本文以氣相沉、外延生長、巨磁薄膜、金剛石及其它薄膜制備及后續的光刻,激光與物質的相互作用,等研究為目的,研製獲得了激光脈寬18ns ,單脈沖能量150mj ,矩形光斑大小2cm 1cm ,束散角3mrad ,最高重復頻率5hz的xecl準分激光器。
  16. Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation

    9 )的提高;先沉氮化硅薄膜再氫等處理能得到更好的鈍化效果。
  17. Study on process of film deposited by laser plasma

    激光誘導等薄膜過程的研究
  18. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等中基團的分佈;分析了不同基團的相對密度隨宏觀放電條件(微波輸入功率、放電氣壓、源氣流量比)的變化規律;探討了等中各種基團的生成途徑;在不同源氣流量比的條件下沉了a - c : f薄膜並通過傅立葉變化紅外吸收光譜( ftir )的測量得到了薄膜中鍵結構的信息;分析了a - c : f薄膜的沉速率及其鍵結構與等空間基團分佈狀態之間的關聯。
  19. Oriented growth of diamond film on si via plasma enhanced hot filament chemical vapor deposition

    增強熱絲化學氣相沉法生長取向金剛石薄膜
  20. The organic electroluminsecence devices : ito / tpd / alq3 / al were fabracated by reactive evaporating deposition and dc glow discharge plasma enhanced reactive evaporating ways. the effects of the organic film thickness on the electronic and optical property have been investigated

    使用真空蒸發沉技術和直流輝光等輔助反應蒸發沉技術制備了四層結構的有機電致發光器件: ito / tpd / alq _ 3 / al ,對制得的器件進行了電學和光學性能的測試。
分享友人