電伏特計 的英文怎麼說

中文拼音 [diànfútèjì]
電伏特計 英文
electro technics
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 伏 : Ⅰ動詞1 （身體向前靠在物體上; 趴） bend over; lie prostrate 2 （低下去） subside; go down 3 （隱藏...
  • 特 : Ⅰ形容詞（特殊; 超出一般） particular; special; exceptional; unusual Ⅱ副詞1 （特別） especially; v...
  • 計 : Ⅰ動詞1 （計算） count; compute; calculate; number 2 （設想; 打算） plan; plot Ⅱ名詞1 （測量或計算...
  1. Test method for alternating current magnetic properties of laminated core specimen using the voltmeter - ammeter - wattmeter methods

    伏特計-安培計-瓦特計測定疊層鐵芯樣品交流電磁特性的方法
  2. Test method for oxygen content using a 14 - mev neutron activation and direct - counting technique

    使用14兆電子伏特的中子活化和直接計數技術測定含氧量的試驗方法
  3. Standard for 600 volt cables of ruggedized design

    加固設計的600伏特電纜標準
  4. Slide - back vacuum tube voltmeter

    偏壓補償式電子管伏特計
  5. Standard test method for alternating - current magnetic properties of toroidal core specimens using the voltmeter - ammeter - wattmeter method

    使用伏特計-電流計-瓦特計方法測試環形鐵芯試樣交流磁性能的標準試驗方法
  6. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  7. This paper focuses attention on using probabilistic simulation to describe this stochastic nature, and adopts the sequential monte - carlo algorithm to simulate each element status in photovoltaic system, and calculating responded reliability indices

    本文的重點是運用概率抽樣描述這種不確定性，採用蒙特卡羅序貫模擬對光伏發電各環節狀態進行概率模擬，並計算相關可靠性指標。
  8. Epstein test method for alternating - current magnetic properties of materials at power frequencies using wattmeter - ammeter - voltmeter method and 25 - cm epstein test frame

    電源頻率下用瓦特計-安培計-伏特計法和25厘米艾普斯亭
  9. Designers say that the worst problem caused by a hane ' s radiation is deep dielectric charging from the mev - energy electrons

    設計人員指出，高空核爆輻射線所造成最大的問題，其實是擁有百萬電子伏特能量的電子所形成的介電質電荷。
  10. And then, the paper simulates the work status and the failure status of each component in photovoltaic station, and puts forward the criterion to repair photovoltaic array, and calculates reliability indices of the stand - alone pv system

    接著本文運用蒙特卡羅序貫的方法，模擬了光伏電站內部各元件的工作及故障檢修的順序，提出了陣列組件的檢修判據，並模擬計算了獨立光伏系統工作的各項可靠性指標。
  11. The cloth with different properties under various frictional voltage between 1000and 20is manufactured from special conductive fiber with special manufacturing technology to satisfy customers with different demands advanced atructure design and precise prlfessional stitching enables it to efficiently prevent the lint caused by human body

    潔凈服系列產品採用特種道電織維及特殊的加工工藝，製成磨擦電壓值在1000伏到20伏內不同性能的布料.能滿足不同要求的用戶.先進的結構設計精密的專業縫制能高效阻擋體的發塵
  12. The proposed modulator uses 0. 35um standard cmos process, the nmos and pmos threshold voltage is 0. 54 volt and - 0. 48 volt, respectively, and the power supply is 1. 5 volt. the nyquist converter rate is 50 khz, oversampling ratio is 80. the proposed modulator can obtain 98db dynamic range, 16 bits converter resolution, and fits for high - fidelity, digital - audio application

    本設計採用0 . 35微米標準cmos工藝，其中nmos和pmos晶體管的閾值電壓分別為0 . 54伏和- 0 . 48伏，電源電壓為1 . 5伏，奈奎斯特轉換率為50khz ，過采樣率為80 ，該調制器可實現動態范圍98db ， 16位的轉換精度，適合高保真數字音頻應用。
  13. Power runner is a uniersal external portable energy bank, with adjustable output voltage 3 - 20v and selectable dc changers, it can be used on all kinds of dc portable electronic devices, such as notebook, portable dvd player, digital camera, camcorder, pda, walkman, cellular phone, etc

    "隨身電"採用高容量高安全性"多串多並"獨特設計，多段可調節輸出電壓，廣泛應用於3 - 20伏特3c消費性電子產品如筆記本電腦，便攜式dvd ，數碼相機，數碼攝錄影機， pda ， walkman ，手機等
  14. Device applications of physical phenomena are considered, including electrical conductivity and doping, transistors, photodetectors and photovoltaics, luminescence, light emitting diodes, lasers, optical phenomena, photonics, ferromagnetism, and magnetoresistance

    包括電導性及摻雜，電晶體、光偵測器及光伏特計，螢光、發光二極體、雷射、光學現象、光電子學、鐵磁性及磁阻性等物理現象之元件應用。
  15. The digital voltmeter has to be powered with a power supply or batteries, while the magnetoelectric type meter only needs a battery in the ohms mode

    數字式伏特計必須供以能量或者以電池組為動力，而磁電式儀表僅僅在歐姆表裡需要一節電池。
  16. This subject is a research about manufacturing silicon magnetic - transistor with rectangle - plank cubic construction on silicon surface by mems technology, meanwhile it also makes a experiment - research on characteristic of silicon magnetic - transistor manufactured experiment expresses that silicon magnetic - transistor with rectangle plank cubic construction which is made by mems technology owns many virtues, which are as follows : first, stronger v - i characteristic curves and higher magnetic sensitivity ( collector current magnetic sensitivity of sample can achieve to 227 % / t ), second, lower negative - temperature coefficient that is small

    本課題主要研究採用mems技術在矽片上製作矩形板狀立體結構硅磁敏三極體，並對製作的硅磁敏三極體樣品基本特性進行實驗研究。實驗結果表明本課題採用mems技術設計、製作的矩形板狀立體結構的硅磁敏三極體樣品具有較理想的伏安特性曲線、具有較高的磁靈敏度（樣品集電極電流磁靈敏度可達227 / t ） 、具有負溫度系數且溫度系數較小、在磁場一定時i _ c i _ b線性關系較好等優點。
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