電位阱 的英文怎麼說
中文拼音 [diànwèijǐng]
電位阱
英文
potential well-
When the currents applied to the various wires are modulated in an appropriate way, a series of potential wells moves across the chip surface
適當調整導線上的電流后，就會有一連串的位能阱在晶片表面移動。( 2 ) when the impurity in the center of the well, the binding energy of the impurity is decreased as the strength of applied electric field increased
（ 2 ）當施主離子位於勢阱中心時，雜質的束縛能隨著電場強度的增大而減小。( 3 ) the electric field breaks the energy degeneracy for symmetrical impurity position in the well, the results show that the redshift and blueshift of the impurity stark energy shift as the impurity position. ( 4 ) under the same external electric field, the impurity stark energy shift is obviously different with the different aspect ratio of the quantum well wires
（ 3 ）當施主離子位於勢阱中不同位置時，零電場下量子阱線中的雜質態是關于施主離子位置中心對稱的簡並態，在外加電場作用下發生能級分裂，這種簡並不再存在;雜質的stark能移由於施主離子位置的不同表現為紅移或藍移。One reason for that is the dismatching of effective mass and dielectric constant between the well and the barrier, another important reason is the consideration of the correlation between confined and non - confined direction in the wider well condition
其原因是除了考慮了阱壘中電子有川北帥他人學顧十研究生學位論義蘇會效質量及介電常數的失配性外，更重要的是在寬階時不能忽略限制方向與非限制方向的相關性因素分享友人