電光器件 的英文怎麼說

中文拼音 [diànguāngqìjiàn]
電光器件 英文
electro optic device
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 電光 : [光學] light produced by electricity （電能所發的光）; lightning （閃電）; electro optics （電場...
  1. The work on the simulation of filter, which was applied to the oled to improve the characteristic of chromatics of emission, was introduced

    有機發光器件的載流子注入、傳輸、復合過程與器件本身的材料、結構、工作電壓密切相關。
  2. Organic electroluminescent devices ( oleds ) have aroused many scientists " interests because of their potential adventages in low - power, emissive, flexible, cost - competitive, flat panel displays. red, green and blue light - emitting devices are readily avaible

    有機薄膜電致發光器件具有驅動電壓低、發光效率高、制備容易、可製成大面積的平板顯示器以及顏色豐富等特點，已引起各國科學工作者的廣泛關注。
  3. A solidstate photosensitive electron device whose current voltage charact eristic is a function of incident radiation

    一種固態光敏電子器件，其電流電壓特性是入射光的函數。
  4. For longer wavelengths a number of extrinsic photoconductive devices exist.

    對于更長的波長，有許多非本徵光電導器件可用。
  5. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  6. Semiconductor optoelectronic devices detail specification for type gd101 pin photodiode

    半導體光電子器件gd101型pin光電二極體詳細規范
  7. Semiconductor optoelectronic devices detail specification for type gd3550y pin photodiode

    半導體光電子器件gd3550y型pin光電二極體詳細規范
  8. : mainly used in ito target, alloy and photoelectricity components

    ：主要用於製作ito靶材、合金及光電元器件等。
  9. Elep - v series photoelectron device burn - in syst em

    Elep - v系列光電子器件老化系統
  10. Determining pinhole density in photoresist films used in microelectronic device processing

    微電子器件加工過程用的光刻膜中針孔密度的測定
  11. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  12. Semiconductor devices. harmonized system of quality assessment for electronic components. ambient rated photocouplers with phototransistor output. blank detail specification

    半導體器件.電子器件質量評估協調體系.帶光電晶體管輸出的特定環境溫度光電耦合器.空白詳細規范
  13. This could increase the work function of ito, which would decrease the device threshold voltage and increase the luminescence efficiency consequently

    因此，採用氧等離子體處理的ito薄膜作為oled的陽極將降低發光器件的開啟電壓，提高其發光效率。
  14. Later, the discovery of all colures photoluminescence and electric - luminescence from porous silicon and the encouraging progress in fabricating porous silicon based light - emitters has cast a new light on si - based opt - electronics

    多孔硅可能彌補單晶硅材料不能有效發光的缺點，預示了用單晶硅制備發光器件進而實現全硅光電子集成的美好前景。
  15. Theory and experiments of bulk - wave acousto - electro - optical ( aeo ) device, involving one - dimension and multi - dimension, are systematically studied. the thesis includes the following contents : coupled - wave equation theory of aeo interaction, determination of the optimum operating mode of aeo device, geometrical relationships of the anisotropic acousto - optic interaction, design and experiment of the aeo device. finally, the optimum design of ao device with beam steering theory is also studied

    論文主要研究內容包括:一維和多維聲電光效應的耦合波方程及其衍射效率計算公式的建立、一維和多維聲電光器件最佳工作模式的選擇、聲電光晶體反常聲光互作用幾何關系的計算、 ln一維反常聲電光器件和kdp二維反常聲電光器件的設計製作以及實驗測試、正常與反常超聲跟蹤聲光偏轉器的優化設計。
  16. Based on this, the optimum operating mode of ln anisotropic one - dimension aeo device is determined as : light promulgates along z axis, ultrasonic wave promulgates along x axis, and direct current electric field is loaded along y axis

    經過計算，一維鈮酸鋰反常聲電光器件的最優化工作模式為:光沿著z軸方向，直流電場沿y方向，超聲波為沿著x軸方向的快切變波模式。
  17. The optimum operating mode of kdp two - dimension aeo device is : the light promulgates along z axis, direct current electric field is loaded along z axis too, a pair of slow wave promulgates in xoy plane, which are vertical to each other

    二維kdp聲電光器件最優化工作模式為:光和電場方向沿z軸方向，聲波採用xoy平面內兩個相互垂直的慢波，其中正常器件為縱波、反常器件為切變波。
  18. Ln one - dimension anisotropic aeo device and kdp two - dimension anisotropic aeo device are designed and made

    設計製作了ln一維反常聲電光器件、 kdp二維反常聲電光器件。
  19. The research results will lay the foundations for the design and manufacture of multi - dimensional acousto - electro - optic device

    多維聲電光器件在光信號處理與多路光通信領域內有廣泛應用前景。
  20. The research results will lay the foundations for the design and manufacture of the multi - dimensional acousto - electropic - optic device. the thickness of plating layers and the length, width, thickness of piezoelectric transducer are determined, according to transporting line theory of mason ' s equivalent circuit

    本文還利用傳輸線的瑪森等效電路理論確定各晶體在其工作模式下各鍍層的厚度及換能器的長度、寬度、厚度；研究結果為多維聲電光器件的設計與製作打下了良好基礎。
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