電光材料 的英文怎麼說

中文拼音 [diànguāngcáiliào]
電光材料 英文
electro optic material
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
  • : 名詞1 (木料) timber 2 (泛指可以直接製成成品的東西; 材料) material 3 (供寫作或參考的資料) ma...
  • : 名詞1 (材料; 原料) material; stuff 2 (喂牲口用的穀物) feed; fodder 3 (料器) glassware 4 (...
  • 電光 : [光學] light produced by electricity (電能所發的光); lightning (閃電); electro optics (電場...
  • 材料 : 1. (原料) material 2. (資料) data; material 3. (適于做某種事的人才) makings; stuff
  1. Study on a new process for preparation of an organic electroluminescent compound of coumarine derivatives

    合成香豆素類有機致發體新工藝研究
  2. Ceo22 is used as optical materials, polishing agents, ultraviolet absorption materials, the cleaning catalyst of car ' s waste gases, chemical decolorant of glass, radiation - resisting glass permanent magnet, electronic ceramics etc. if it is processed into nanoparticles, it will exhibit some novel properties led to varied applications. for example, ceo22 nanocrystal is a better promoter of cytochrome c and the stabilizer of zro22 ceramics. because of its high index of refraction and good stability, it is used to produce reduced reflection film

    Ceo _ 2是一種廉價而用途極廣的,如用於發、拋劑、紫外吸收、汽車尾氣凈化催化劑、玻璃的化學退色劑、耐輻射玻璃、永磁體、子陶瓷等,其納米化后將出現一些新的性質及應用,如ceoz納米晶是細胞色素c的良好的催進劑,還用作zro :陶瓷的穩定劑,由於ceo :折射率高,穩定性好,常用於制備減反射膜等。
  3. 1. two kinds of azo pigments with excellent photosensitivity, named as flurenone bisazo ( f - azo ) and oxazole bisazo ( o - azo ), are synthesized. the preparation of organic photoconductive blended materials and their photoconductivity in single - layered photoreceptors made from f - azo / titanium oxide phthalocyanine ( tiopc ) composite and o - azo / tiopc, respectively, are investigated

    合成了芴酮基偶氮( f - azo )與?唑基偶氮( o - azo )兩種敏性優良的偶氮化合物,並以此制備了芴酮基偶氮酞菁氧鈦和?唑基偶氮酞菁氧鈦復合體系及其單層導體。
  4. In the first chapter of the dissertation, we review the development history and the trend of xerography technology, present a series of organic semiconductive materials and their device structures, and bring forward three ways to prepare single - layered photoconductor with high performance by dimixing, preparing nanomaterials, and synthesizing new organic electron transport materials

    論文第一章首先評述了子照相技術的發展歷史和發展趨勢,同時介紹了有機的種類和導體的結構,提出可通過復合、納米化和研製新型的子傳輸三種手段來制備高性能有機單層導體。
  5. Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology

    硅是微子器件的主要,但硅的間接能隙特性嚴重製約了其在子領域的應用,如果能在硅基的基礎上制備發,就可利用已有成熟的硅集成技術發展硅子集成,從而有可能完全改變信息技術的面貌。
  6. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層場強度的變化影響了空穴和子的隧穿幾率,從而導致載流子的復合區域發生改變而發出不同顏色的; 3 )制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍oled ,空穴阻擋balq3的摻入顯著影響了oled的性能,當balq3的摻雜濃度為25mol %時, oled的發效率為1 . 0lm / w ,發譜的峰值為440nm ,色純度為( 0 . 18 , 0 . 15 ) ,未封裝器件的半衰期達到了950小時; 4 )在藍adn中摻雜npb 、 balq3和tbp三種時,不僅改善了器件的發亮度和色純度,而且提高了器件的發效率和壽命。
  7. Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band

    Aln具有許多優異的物理性能,在藍、紫外發及熱釋、外延過渡層、 soi的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。
  8. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的性質,而且原豐富、價格低、無毒、沉積溫度低、熱穩定性高,在氫等離子體環境中具有很高的化學穩定性,不易導致太陽能活性降低。
  9. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體( - al _ 2o _ 3 )不僅由於其色澤艷麗成為人們珍愛的名貴寶石,而且由於它具有的優異性能,被廣泛應用於工、機械、激器,學器件和半導體襯底。鈦藍寶石是目前最優異的固體寬帶調諧激,用於製作飛秒脈沖可調諧激器。氧化鋅晶體是直接帶隙寬禁帶半導體(禁帶寬度3 . 37ev ) ,現已發現具有室溫下受激發射特性,有可能實現室溫下半導體紫外發
  10. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能池製作的工藝以及聚太陽能池組件的研究。首先,介紹了國內外太陽能池的研究現狀及應用情況;其次,運用太陽能池基本原理討論影響池轉換效率的因素,分析了級聯池的伏安特性;隨后,討論了cainp _ 2 / gaas / ge雙結級聯池的結構設計理念,研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽的工藝過程,解決了異質生長的結晶質量、界面應力、互擴散以及n 、 p型摻雜等一系列問題;然後總結了級聯池的后工藝製作;最後,研究了以pmma為的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝,設計並安裝完成新型聚太陽能池組件。
  11. Tantalum lithium ( litao3 ), a novel single crystal material, developed and industrialized with the development of communication and information industries recently, owns the excellent performances such as high mechanical - electrical coupling coefficient, lower wear - resistance, excellent high - temperature stability, excellent high - frequency capability, etc. however, researches on tantalum lithium single crystal wafer around world are still lacking

    鉭酸鋰是近年來隨著通訊、信息產業迅速發展而開發並產業化的新型。它具有機耦合系數大、低損耗、高溫穩定性、高頻性能好等優良的壓和熱性能。
  12. In the lclv, the most important parameter, switching ratio of the lclv, is analyzed. it is mainly influenced by the dark - conductivity, ratio of light - to dark - conductivity, thickness of the photoconductor and the thickness of the liquid crystal. it is concluded that the switching ratio can be improved by matching the thickness of the liquid crystal and the photoconductpr, and the proper change region of the light conductivity of the photoconductor

    學匹配方面,我們對的暗態阻、亮暗導比、厚度以及液晶的厚度等對閥開關比的影響進行了分析,認為液晶閥開關能力的提高很大程度上取決于導層和液晶層的厚度匹配,以及導層的導變化的區域位置。
  13. A high - pressure mercury lamp in which the light is produced partly by the mercury vapor and partly by a layer of fluorescent material on the inner surface of the outer bulb excited by the ultraviolet radiation of the discharge - for example : hpl - n, hplr - n lamps

    一種高壓汞燈,其中一部分由汞蒸氣輻出,另一部分由放輻出的紫外線激發后的熒塗層發射得到,該熒塗層位於外泡殼的內表面。
  14. The photo - action dielectric detecting apparatus for the silver halide materials is designed and set up in this paper on the basis of microwave absorption technique ( mwa ) from the point of view of the photo - action kinetics

    利用微波吸收技術對鹵化銀感子特性和微觀感機理進行研究,能夠獲得子運動行為的規律及其對潛影形成過程的影響,對提高的感性能就有重要的指導意義。
  15. Uses as an activator for fluoresent materials. also used in the research of electronics and science

    用途用作熒激活劑、子工業及科學研究。
  16. Cupric nitrate is used as catalyst, oxidizer, activating agent for luminescent powder, and photosensitive resistance materials

    硝酸銅用作催化劑氧化劑熒粉激活劑及等。
  17. This modulator works with the guided - wave reflectance peak, in which the light intensity is changed by the variation of the refractive index of poled polymer due to the electro - optic effects. device performances have been theoretically and experimentally investigated. we also successfully carried out experiments of video signal transmission using the proposed modulator

    該調制器工作于金屬包覆波導的衰減全反射導模吸收峰,利用極化聚合物電光材料的折射率對導模吸收的影響來實現調制,並對器件的性能指標進行了實驗研究,同時利用製作的反射型調制器進行了視頻信號良好地傳輸實驗。
  18. Recently, the fabrication, structures, properties and applications of electro - optic materials have obtained significance in the novel materials science in the world

    近年來,電光材料的制備、結構、性能和應用己經成為國際上新型研究的一個熱點。
  19. The results of e - o tests showed that ktp crystals by our flux technique is an attractive material for various e - o applications, especially used in a high - repetition - rate and high responsible laser system

    應用試驗結果表明,本實驗的熔劑法ktp晶體是一種非常吸引人的電光材料,特別是適合用於高重復頻率、高響應速度等激系統。
  20. In order to fabricate excellent electro - optic materials, this paper focused on the choice of electro - optic materials, the fabrication of ceramics target, developing new rf magnetron sputtering system, and the preparation of the electro - optic film, etc. the following results were obtained

    本文圍繞制備性能優異的電光材料,從電光材料的選擇、配比、靶制備、射頻磁控濺射鍍膜設備的研製、薄膜製作等方面進行了研究。
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