電場效應 的英文怎麼說

中文拼音 [diànchǎngxiàoyīng]
電場效應 英文
effect, field
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 場Ⅰ名詞1 (平坦的空地 多用來翻曬糧食 碾軋穀物) a level open space; threshing ground 2 [方言] (...
  • : Ⅰ名詞(效果; 功用) effect; efficiency; result Ⅱ動詞1 (仿效) imitate; follow the example of 2 ...
  • : 應動詞1 (回答) answer; respond to; echo 2 (滿足要求) comply with; grant 3 (順應; 適應) suit...
  • 效應 : [物理學] effect; action; influence
  1. Finally, because high - speed power solenoid valve is one of the most important executive parts in the electronic control diesel engine and the performances of diesel engine are strongly related to the solenoid valve, the response performance of the solenoid valve is investigated. the response performance of the solenoid is influenced by many factors, such as driving voltage, electric driving unit etc. in order to have high excitation voltage and in low maintaining voltage, a high - low voltage electric driving unit is designed, and in order to make the solenoid valve close more rapidly, an active free - wheeling circuit and a bootstrapping circuit are designed in the electric driving unit, too. in the high - low electric driving unit, high voltage and low voltage are supplied by the dc - dc device and by the accumulator respectively

    高速強力磁閥的響性能除了與閥本身的結構和材料有關外,與驅動壓、驅動路的設計密切相關,本文通過分析,首先開發出一種高低壓驅動路,高壓源是山升壓式dc - dc原理獲取的,低壓由蓄池本身提供,實現高壓強激和低壓維持的功能,路中採用有源續流柴汕機中卜軌知介系統的設訓及其七川j敝略的叭究路進行續流,加誣了磁閥的關閉速度;採用自舉吐路,降低了管對驅動壓的要求。
  2. To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.

    為適高阻抗需要,儀器輸入路中須用特殊設計的靜計專用子管、晶體管。
  3. Field effect transistor

    晶體
  4. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內, gan基微子器件的研究剛開始起步,制備gan分立器件的工藝尚處于探索研究階段,特別是受algan gan二維子氣材料來源的限制,國內algan gan基的晶體管的研究開展得較少,關于肖特基整流二極體的研究更少。
  5. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的離輻射感金屬氧化物半導體晶體管閾壓偏移分量的標準試驗方法
  6. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結晶體管。
  7. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840三極體,磁環及高頻扼流圈採用負溫系數,這樣的元件選擇使整流器適用壓范圍寬160v - 250v ,功耗低,溫升小,性能十分穩定,確保其擁有很長的壽命。
  8. Local electric field effect

    局部電場效應
  9. We found that the polaronic effects and electric field effects have significant contributions to the ground state energy

    我們發現極化子和外電場效應對基態能量都有顯著影響。
  10. Therefore, it is an efficient way to dilute cro2 granules for enhancing extrinsic mr, due to the formation of new metal - insulator microstructure, which adjusts natures of barrier. in much of work published, much interest involves the fabricating technique and magnetotransport of cro2 ferromagnet, experimentally

    因此,採用cro _ 2 -絕緣顆粒復合的方法,以形成新的微結構來調整顆粒界面狀態和隧穿勢壘性質,是降低外磁、增強外稟磁的有手段。
  11. The laps uses photo excitation of the semiconductor to probe the surface potential at the insulator - electrolyte interface. the semiconductor is addressed by a modulated flux of ( infrared ) photons : this flux results in the generation of hole - electron pairs in the semiconductor

    Laps的原理是基於電場效應使器件對絕緣層與解質溶液間界面位變化敏感,其結構類似於eis (解質?絕緣層?半導體)結構,它的特殊之處在於用光對半導體進行照射引起解質?絕緣層界面間位的變化。
  12. The mechanism of index ellipsoid of linbo _ 3 crystal distorted with an external applied electric field by means of the electro - optic tensor as investigated. based on the operation principle of m - z waveguide, the operation mechanism of

    理論是從雙折射晶體的折射率橢球出發,分析外加調制通過晶體光張量對折射率橢球的影響,從而分析的機理。
  13. In this paper, in the course of studying the physical principles of electro - optics effect of bso, the characteristic of bso and ( the planar electric field image ) is analyzed thoroughly on the based of swing modulate theory

    本論文在對bso晶體物理機理的研究中,從晶體的振幅調制理論出發,對bso晶體特性以及bso晶體內形成二維圖像進行了深入的分析。
  14. Replacement of final power fets in all - solidstate tv transmitte

    全固態視發射機末級功放管的更換
  15. It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna

    本文證明了在cmos源端degeneration結構的低噪聲放大器中,忽略管的柵漏容將造成對放大管的最優柵寬估計過大。
  16. Protection of gaas fea module from surge voltage

    砷化鎵放大模塊的浪涌壓防護
  17. Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.力開關設備的金屬氧化物半導體晶體管
  18. Mosfets discrete semiconductor devices - part 8 - 4 : metal - oxide - semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.第8 - 4部分:力開關裝置用金屬氧化物半導體晶體管
  19. Due to the advantage of non - destruction read out, ferroelectric field effect transistor ( ffet ) is supposed to be the ideal potential memory device and has been widely investigated

    電場效應晶體管( ffet )存儲器能夠實現非破壞性讀出,是一種比較理想的存儲方式,因此從一開始就受到人們極大的關注。
  20. The influence of a static electric field was investigated systemic in three stratifications : the electron scope of single atom, multi - atom local effect and macro - materials character based on electron theory. the multi - scope effect of electric field on metals and alloys, such as the atomic energy, solute elements, microstructure and precipitates, fracture character, mechanic and physical properties, were studied with the purpose of finding the mechanism and the nature of the electric field

    針對目前作用研究中的問題,本文以鋁合金為研究對象,分別在三個不同尺度的理論范疇:單原子的子理論,多原子(原子團簇)的微觀局域,和材料宏、微觀行為,系統的、多層次的研究了子層次,溶質行為,微觀組織,以及宏觀的斷裂特徵和性能等多個尺度的電場效應
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