電壓參照電路 的英文怎麼說

中文拼音 [diànyāshēnzhàodiànlù]
電壓參照電路 英文
voltage reference circuit
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 參 : 參構詞成分。
  • 照 : Ⅰ動詞1 （照射） illuminate; light up; shine 2 （反映） reflect; mirror 3 （拍攝） take a picture ...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 電壓 : voltage; electric tension; electric voltage
  • 參照 : refer to; consult
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Finally, the method of estimating power customer emission level based on binary linear regression is put forward, which make it a condition that harmonic emission is steady at the point of common coupling. combined with power system thevenin equivalent and customer norton equivalent, according to the principle of least squares method, the voltage that a customer ' s harmonic current begets at the point of common coupling can be estimated in the light of the plural correlation of network parameters

    最後，提出了基於二元線性回歸的用戶諧波發射水平估計方法，該方法在假設公共聯接點諧波發射穩定的情況下，結合系統側戴維南等值與用戶側諾頓等值的電路圖，按照最小二乘法原理，利用電網各參數的復數關系推導關于系統側諧波阻抗的二元線性回歸方程，並根據諧波阻抗的估計值求取用戶諧波電流在公共聯四川大學碩士學位論文（ 2003 ）接點產生的電壓降。
  2. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  3. Gb1094. 5 - 85 power transformers part 5 ability to withstand short circuit only applies to power transformers, not to balanced transformers. if short - circuit test on balanced transformers can be performed by means of single phase supply instead of three phase supply, and other special transformers can also be done in this way, so it is very significant to improve test capacity of transformer laboratory in our country

    變壓器的短路強度只能通過短路試驗來驗證，國家標準gb1094 . 5 - 1985 《電力變壓器第5部分承受短路的能力》只適用於電力變壓器，對平衡變壓器等特殊變壓器並無具體規定，對于平衡變壓器，如果可以用單相電源預先短路法模擬三相電源的短路試驗，那麼其它特種變壓器的短路試驗也可以參照進行，這對提高我國變壓器試驗室的試驗能力具有重要意義。
  4. The system ensures transformer to " credibility, safety and economy running. by analyzing transformer criterion and picking up the work criterion and test requirement and process of power transformer test ; according to the requirement of " synthesis function, computer structure, screen watch, intelligence management ", the performance and parameter integrated measure system of oilfield power transformer is designed ; according to the demands of transformer test criterion and computer control technique, the computer test methods are worked out ; aiming at the special instance of power company, the online measure of short - test in

    通過分析變壓器標準，整理出滿足電力變壓器試驗的工作標準、試驗要求和步驟；按照「功能綜合化，結構微機化，監視屏幕化，管理智能化」的要求，設計了電力變壓器性能參數綜合檢測系統；根據變壓器試驗標準和計算機控制技術，設計出符合微機檢測的方法；對變壓器試驗中的短路試驗的在線測量作試驗室模擬研究，說明變壓器試驗在線測量是可行的。
  5. Moreover, in order to represent the influence of temperature and irradiation to the characteristic of solar array, a physical mathematical model of solar array is established which based on short - circuit current ( isc ), open circuit voltage ( voc ), the voltage of mpp ( vm ), the current of mpp ( im ). the characteristic of solar array in varied temperature and irradiation can be established with the appropriated parameters deduced by the above model

    為了能夠反映環境溫度、日照強度對太陽電池陣列的i - v特性的影響，系統建立了基於短路電流（ i _ （ sc ） ） 、開路電壓（ v _ （ oc ） ） 、最大功率點電壓（ v _ m ）和最大功率點電流（ i _ m ）的太陽電池陣列的工程化數學物理模型，該模型可以依據現場測量的數據確定任意照度、溫度條件下的特性參數，預估太陽電池陣列在不同溫度、照度下的特性曲線。
分享友人
分享到 Line

分享到臉書