電壓溫度系數 的英文怎麼說

中文拼音 [diànwēnshǔ]
電壓溫度系數 英文
temperature conefficient of voltage
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 壓構詞成分。
  • : Ⅰ形容詞(不冷不熱) warm; lukewarm; hot; gentle; mild Ⅱ名詞1 (溫度) temperature 2 (瘟) acute ...
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  • : 系動詞(打結; 扣) tie; fasten; do up; button up
  • : 數副詞(屢次) frequently; repeatedly
  • 電壓 : voltage; electric tension; electric voltage
  • 溫度 : [物理學] temperature
  • 系數 : [數學] coefficient; ratio; modulus; quotient; factor
  1. Temperature coefficient of breakdown voltage

    擊穿電壓溫度系數
  2. Three parameters, the fractional temperature coefficient, the sensitivity of transconductance to voltage supply and improvement factor, are introduced

    在分析中,本論文引入並使用了跨導的相對、跨導對的敏感、跨導穩定性改善因子三項指標。
  3. Temperature coefficient measuring methods of output voltage and output current for crystalline solar cells and modules

    晶狀太陽能池和模塊的輸出和輸出的測量方法
  4. Sb2016 high pressure high - power resistance box adopts especial aging treatment, precise wire wound resistor of low temperature coefficient and high - pressure airproof switch

    Sb2016型高大功率阻箱採用經過特殊老化處理、低的精密線繞阻器及高密封開關。
  5. The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %

    以高、高氧的條件對薄膜進行後退火處理,薄膜性質得到極大改善,轉變點提高到了300k ,阻?也達到了5 - 8 ,不僅提高了轉變點,而且使轉變保持在一個較窄的區間內。
  6. The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensor needs to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other

    力傳感器的零點存在熱漂移、漂移和時間漂移,減小力傳感器的熱零點漂移的措施是各力敏阻的阻值及其的相等性。
  7. The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensors requires to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other

    力傳感器的零點存在熱漂移、漂移和時間漂移,減小力傳感器的熱零點漂移的措施是各力敏阻的阻值及其的相等性。
  8. We deduced a expressions for threshold voltage temperature coefficient of short channel most. and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature, but it increased sharply at high temperature

    推導了了一個短溝道most閾值電壓溫度系數表達式;發現短溝道most閾值電壓溫度系數在高於室的一個較寬的區內近似不變,但在較高時迅速增大。
  9. The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area

    對傳統帶隙基準路進行了改進設計,採用自偏置結構和鏡像流鏡結構,利用運放的輸出作為運放的偏置,節省了偏置路,降低了功耗;使用低的多晶硅高值阻,降低了漂對路的影響;在不變的情況下,為了減小功耗就必須減小工作流,而增大阻的阻值能有效地減小工作流,多晶硅高值阻的方塊阻很大,可以節省版圖面積。
  10. Directly heated voltage - stabilizing type negative temperature coefficient thermistors

    直熱式穩型負熱敏阻器
  11. The most important parameters for data acquisition systems design are initial error, output voltage temperature coefficient ( tc ), thermal hysteresis, noise, and long - term stability of the voltage reference device

    據採集統設計最重要的參是器件的初始誤差、輸出電壓溫度系數、熱遲滯、輸出噪聲、長期穩定
  12. But often what is not obvious when reading a manufacturer ' s data sheet is how the initial accuracy of the device is affected by other key device parameters such as line regulation, load regulation, initial voltage error, output voltage temperature coefficient ( tc ), output voltage noise, turn - on settling time, thermal hyste - resis, quiescent supply current, and long - term stability

    但,人們閱讀廠家的據手冊時,因受諸如()線性調整率、負載調整率、初始誤差、輸出電壓溫度系數tc 、熱遲滯() 、靜態流和長期穩定等參的影響而使初始精往往不明顯。
  13. The relation between the dye diffusion coefficients in the electrochemical dyeing of soybean protein fiber knitwear when changing the bath voltage and temperature was studied on regarding the dynamics

    摘要從動力學角出發,研究了大豆蛋白纖維針織物化學染色染料擴散隨槽的變化關
  14. At present the manufacture of surface acoustic wave use the technology of the final submicron. a series of the devices of low insertion loss, high q saw rayleigh surface acoustic wave resonators or stws that insertion loss has less than 5db, load quality factor ( ql ) is more than 1000 on the quartz piezoelectric with zero of first temperature factor in the research. these difference frequencies are 60mhz, 280mhz, 739mhz and 1ghz of normal frequency and at also surface acoustic wave. using 1. 25db noise factor amplifier, careful design curcuit, good setting printed curcuit board, and using the 1ghz surface transverse wave resonator as frequency element, researching the low phase noise surface acoustic wave with sideband phase noise near ? 120dbc / hz deviating 1khz on carrier, spurious suppress with 80db

    本研究採用一階為零的石英基片上製作出損耗小於5db 、有載品值因素( ql值)超過1000的一列低損耗、高q值聲表面波rayleigh波或stw諧振器,頻率分別為60mhz 、 280mhz 、 739mhz和1ghz等不同頻率的高性能聲表面波諧振器。並採用噪聲為1 . 25db的低噪聲放大器,精心設計路,優化設計布置印製路板,用標稱頻率為1ghz的聲表面波諧振器為頻率控制元件,製作出在偏離載頻1khz處的單邊帶相位噪聲近- 120dbc / hz 、雜波抑制達80db以上的低相位噪聲聲表面波振蕩器。
  15. Results from hspice simulation and foundation show that the band - gap voltage reference of ic is 3. 126v, has a psrr of 65db, an accuracy of 23ppm / in [ 0, 70 ], and the band - pass filter has an gain of 73db, whose band - pass frequency is 0. 1hz ~ 10hz. comparator ’ s window is 700mv. time sequence and functions of digital circuits are normal

    Hspice和foundation軟體模擬的結果顯示,帶隙基準源為3 . 126v ,抑制比為65db ,為23ppm / ;帶通濾波放大部分增益為73db ,帶通頻率為0 . 1hz ~ 10hz ;雙限比較器窗口為700mv ,功能良好,路時序正確,功能正常。
  16. The hspice simulation result shows a temperature coefficient of 11 ppm / " c from - 40 ? to 100 ' c and output voltage variation of 1mv for supply voltage range from 8 v to 18 v. due to novel curvature compensation, the circuit structure of the proposed reference is simple and both chip area and power consumption are small

    Hspice模擬結果顯示:該基準源在- 40 100的變化范圍內,具有11ppm的低;當在8 18v變化時,輸出變化量僅為1mv ;並且路結構簡單,具有較小的晶元面積和功耗。
  17. The circuit design of bandgap voltage reference is completed, considering the high order temperature compensation with real resistors. the circuits designed have been simulated, using csmc 0. 6um cmos parameter files

    在考慮利用實際阻的來進行帶隙基準高階補償的基礎上,實現了帶隙基準源的路設計。
  18. Two chinese invention patents, which titled " manganin thin film ultra - high pressure sensors " and " preparation method of manganin thin films with low temperature coefficient of resistance ", have been applied based on the above original work of this thesis

    以上第l 3創新點及第5創新點已經分別申請了兩項中國發明專利: 「薄膜式錳銅超高力傳感器」和「低錳銅薄膜的制備方法」 。
  19. Temperature coefficient of hreakdown voltage

    擊穿電壓溫度系數
  20. Temperature conefficient of voltage

    電壓溫度系數
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