電壓漂移 的英文怎麼說

中文拼音 [diànyābiāoyí]
電壓漂移 英文
voltage drift
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電壓 : voltage; electric tension; electric voltage
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state

    在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。
  2. Output voltage and current is often distorted in half bridge converter because voltage unbalance of input capacitors though its application is very abroad

    摘要半橋逆變器應用廣泛，但存在直流分壓電容不均壓，使分壓電容中點電壓漂移，導致輸出電壓和電流畸變的缺點。
  3. The improved voltage model of rotor flux is proposed in the paper. it eliminates the influence to actual system function in the voltage model of rotor flux for the proper drift problem and cumulative error of pure integral calculus tache

    提出了改進的電壓型轉子磁鏈估算模型，消除了電壓型轉子磁鏈估算模型中純積分環節所固有的漂移問題和積累誤差對實際系統性能的影響。
  4. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  5. The models currently used are either modified from low voltage mos models or based on macro model of simple polynomial established dddmos drift region resistance, both of which are limited and cannot provide a globally accurate physical model

    業界目前使用的模型只是在低壓mos模型基礎上作一些修改，或者通過用簡單多項式的形式建立dddmos漂移區電阻的宏模型以建模。
  6. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  7. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  8. This paper introduces a power controlling system for electrosurgical generator based on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates

    介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。
  9. This paper introduces a power controlling system for electrosurgical generator baaed on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates

    摘要介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。
  10. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  11. And we consider sufficiently all kinds of factors, such as conductance of tube, leak and deflate of system, pump speed, ionization and re - ionization of high - energy ion taking place in the process of transmission. furthermore, we take two ways to discuss pressure distribution of cell

    在系統軸線上壓力分佈分析過程中，綜合考慮了管道的流導、系統的漏氣和放氣、泵的抽速、高能離子在管道內漂移過程中發生的電離和再電離等因素的影響。
  12. The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer

    模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。
  13. The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage

    結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。
  14. Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields

    Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。
  15. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  16. In order to solve the problems of flux estimation using the voltage model, such as the initial value and the drift of pure integrator, a flux - observer - based method is applied

    利用磁通觀測器，可避免用電壓模型推算轉子磁通時遇到的積分運算問題（初始值確定和誤差積累引起的積分漂移） 。
  17. Specific issues examined are : compensation for the variation of the stator resistance, the offset error of the dc bus voltage, the voltage error generated by the forward voltage drop the dead time of the switches, improvement of the steady state performance, and the speed sensorless control for the pmsm dtc drive system are of major concern in this thesis

    定子電阻變化，直流母線電壓漂移，開關器件反向相電壓降、逆變器死區時間引起的電壓誤差的補償，提高系統穩態運行性能以及永磁同步電機直接轉矩控制的無速度傳感器運行方案等問題都是本文研究的重點。轉矩的快速響應是直接轉矩控制演算法的一個卓越的性能。
  18. To avoid the actuator, a capacitor load being charged up by the drift current of the amplifier, a secondary feedback from the output of the amplifier has been used and expected result has been gotten

    針對驅動器輸出電流漂移造成的壓電作動器（容性負載）電荷積累，文中引入了抑制驅動器電流漂移的反饋環節，取得了預期的控制效果。
  19. Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity

    Mosfet閾值電壓漂移輻照效應輻照敏感性
  20. Simulating threshold voltage shift of mos devices due to radiation in the low - dose range

    低劑量輻照條件下的mosfet因輻照導致的閾值電壓漂移的模擬
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