電壓閾值 的英文怎麼說

中文拼音 [diànyāyùzhí]
電壓閾值 英文
voltagethreshold
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 電壓 : voltage; electric tension; electric voltage
  1. The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "

    認為cu等離子體羽的發光機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的；隨激光能量的增加， cu等離子體特徵輻射（分立譜） 、連續背景輻射（連續譜） 、電子溫度都出現最大值；結合對al的實驗結果說明：激光燒蝕金屬產生的等離子體，其特徵輻射、連續輻射、電子溫度可能都存在一定的能量閾值；背景氣壓對激光燒蝕等離子體譜線的影響，其機理可以認為是「熱庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。
  2. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  3. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  4. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  5. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  6. Results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed - gate process

    結果表明，採用平面工藝制備的gaasmesfet閾值電壓均勻性比採用挖槽工藝制備的gaasmesfet閾值電壓均勻性更好。
  7. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  8. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  9. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  10. Especially in cmos n - well integrated circuits technology, the body effect will cause the nmos threshold voltage following the pumping voltage to be lifted and then the highest pumping voltage will be limited

    特別是在n阱集成電路工藝，體效應使得每一階nmos管的閾值電壓都不斷抬升，以至於電荷泵的最高輸出電壓受到限制。
  11. At the same time, liquid crystal science harvests satisfyingly, its research field has extended to physics, chemistry, electronics, biology, etc. surface orientation of liquid crystal molecule ( lcm ) is a key technique in the application of lcd, the effect of orientation plays an important role in the basic performances, such as uniformity, visual angle, aberration, response, threshold of voltage and so forth

    液晶自1976年在世界上首次應用於計算器的顯示屏以來，就以其輕量、薄型、能耗低、顯示面積大等優勢在顯示應用方面得到迅猛發展，而同時，液晶科學也得到了全面發展，研究領域遍及物理、化學、電子學、生物學等各個學科。液晶分子取向控制技術是液晶板顯示應用中的一個關鍵技術，取向程度的好壞對液晶顯示器的均勻性、視角、色差、響應速度、閾值電壓等基本性能都有重要影響。
  12. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  13. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  14. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  15. The factors which influenced the surface flashover and the way to rise the withstand voltage are also been analyzed

    對影響表面閃絡發生因素，提高表面閃絡電壓閾值方法進行了分析。
  16. We deduced a expressions for threshold voltage temperature coefficient of short channel most. and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature, but it increased sharply at high temperature

    推導了了一個短溝道most閾值電壓溫度系數表達式；發現短溝道most閾值電壓溫度系數在高於室溫的一個較寬的溫區內近似不變，但在溫度較高時迅速增大。
  17. The model of threshold voltage solves the problems of nonuniformly doped channel, short channel effect, implantation for adjusting threshold voltage, edge capacitance of gate, etc. not only the model can be used in ldmos, but it can perfectly describe the short channel effect of threshold voltage for all other mos devices

    其中，閾值電壓模型解決了溝道非均勻摻雜、短溝道效應，調閾值注入，柵邊緣電容等問題。該模型不僅適用於ldmos ，也可以很好地描述所有的mos器件閾值電壓的短溝道效應，嚴格證明了短溝道效應會引起閾值電壓的減小。
  18. The proposed modulator uses 0. 35um standard cmos process, the nmos and pmos threshold voltage is 0. 54 volt and - 0. 48 volt, respectively, and the power supply is 1. 5 volt. the nyquist converter rate is 50 khz, oversampling ratio is 80. the proposed modulator can obtain 98db dynamic range, 16 bits converter resolution, and fits for high - fidelity, digital - audio application

    本設計採用0 . 35微米標準cmos工藝，其中nmos和pmos晶體管的閾值電壓分別為0 . 54伏和- 0 . 48伏，電源電壓為1 . 5伏，奈奎斯特轉換率為50khz ，過采樣率為80 ，該調制器可實現動態范圍98db ， 16位的轉換精度，適合高保真數字音頻應用。
  19. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態，根據其沿溝道非均勻分佈的模型，採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導，並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
  20. Especially the gaas pcss can take on particular phenomena of nonlinear characteristics ( also known as lock - on effect or high - gain mode ) witch made it be very availability., convenience and f lexibleness

    特別是在一定的觸發光能和偏置電場閾值下，光電導開關存在的非線性工作模式（或lock - on效應） ，使得pcss ' s在高壓超快功率脈沖系統中的應用更為有效、方便、靈活。
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