電子器件 的英文怎麼說

中文拼音 [diànziqìjiàn]
電子器件 英文
chinese journal of electron devices
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 電子 : [物理學] [電學] electron
  1. The vacuum electronic device plays a very important role in the military affairs and demotic message system and the daily life of the people

    在軍事和民用信息系統及人民日常生活中，真空電子器件發揮著重要的作用。
  2. Electronic devices shrank tremendously.

    電子器件體積大大縮小了。
  3. The paper analyses the principle of variable frequency source and brings forward that using electric electron technology make variable frequency output, and using high power dynatron that is parallel connection magnify power

    文中對該變頻電源的工作原理及主要硬體作了較詳細的介紹；提出利用電力電子器件實現輸出大功率。
  4. The sphere of competition of car manufactures and firms assuredly is not confined to engines, chassis, and electronics.

    汽車製造廠商的競爭領域決不僅限於車引擎、汽車底盤和電子器件等方面。
  5. With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed

    本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出真空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。
  6. A solidstate photosensitive electron device whose current voltage charact eristic is a function of incident radiation

    一種固態光敏電子器件，其電流電壓特性是入射光的函數。
  7. Branch of science that deals with the study and application of electron devices, e. g., electron tubes, transistors, magnetic amplifiers, etc

    關于電子器件（例如電子管、晶體管、磁放大器等）的研究與應用的一門科學分支。
  8. Semiconductor optoelectronic devices detail specification for type gd101 pin photodiode

    半導體光電子器件gd101型pin光電二極體詳細規范
  9. Semiconductor optoelectronic devices detail specification for type gd3550y pin photodiode

    半導體光電子器件gd3550y型pin光電二極體詳細規范
  10. Elep - v series photoelectron device burn - in syst em

    Elep - v系列光電子器件老化系統
  11. Determining pinhole density in photoresist films used in microelectronic device processing

    微電子器件加工過程用的光刻膜中針孔密度的測定
  12. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  13. Semiconductor devices. harmonized system of quality assessment for electronic components. ambient rated photocouplers with phototransistor output. blank detail specification

    半導體器件.電子器件質量評估協調體系.帶光電晶體管輸出的特定環境溫度光電耦合器.空白詳細規范
  14. With the rapid development of the semiconductor technology, large of the vacuum electronic device has replaced by the semiconductor element from the middle period of the last century. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and wide frequency band and high power field, especially in the exceed - high power field. the complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被半導體器件取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  15. From the middle - later period of the last century, with the rapid development of the semiconductor technology, large of the vacuum electronic device was replaced by the semiconductor element. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and high power field. this complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被其取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  16. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  17. Fabrication of nanoelectronic resonant tunneling diodes

    納電子器件諧振隧道二極體的研製
  18. Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology

    硅是微電子器件的主要材料，但硅的間接能隙特性嚴重製約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發光材料，就可利用已有成熟的硅集成技術發展硅光電子集成，從而有可能完全改變信息技術的面貌。
  19. This paper summarizes the present situation of modern microelectronic device is. with integrated degree of circuits increasing, and the characteristic sizes of technics minishing as well as the device sizes turning into sub - micron and deep sub - micron, there are many problems

    概述了現代微電子器件發展的現狀，電路集成度的不斷提高，加工工藝特徵尺寸的不斷減小，器件尺寸進入了亞微米、深亞微米階段，出現了許多不良效應。
  20. A data acquisition system with the following features is realized : ? transmission rate up to 100kbyte / s over usb ; ? system ' s dynamic range as high as 120 db ; ? multi - kind of trigger mode control ; ? sampling rate as high as 100 ksps ; ? 12 - bit a / d conversion accuracy ; ? 32k bytes on - board data memory ; ? the system, which was made up of large - scale electronic chips, is small, light and portable, and suitable for field use

    本設計最終實現了一個瞬態信號數據採集系統，它具有以下特點： ?採用usb介面進行高速數據傳輸，傳輸速度達100kbyte / s ； ?採用浮點a / d轉換技術，動態范圍達120db ； ?多種采樣觸發控制方式； ?最高采樣率100ksps ； ? 12位采樣精度： ? 32kb數據緩存； ?使用新型大規模電子器件，系統結構緊湊，重量輕，適合野外作業。
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