電子密度計 的英文怎麼說

中文拼音 [diànzimìdùjì]
電子密度計 英文
electronic de itometer
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 計 : Ⅰ動詞1 （計算） count; compute; calculate; number 2 （設想; 打算） plan; plot Ⅱ名詞1 （測量或計算...
  • 電子 : [物理學] [電學] electron
  1. Our company is specializing in all kinds of precision instruments including micro - vickers hardness tester, stero microscope and electronic clinometer

    我公司是專業經營各種品管檢測用的精密測量工具及測量儀器的公司，包括硬度計，顯微鏡和電子水平尺等方面的儀器
  2. We have calculated one - and two - photon absorption cross sections of the lowest excited states of a series of molecules combined with benzene, stilben, thiophene as center attached with amine, diphenylamine, diethylamine as electron - donor and nitryl as electron - acceptor ; the effects of molecular length, n center and electron - donor on two - photon absorption cross sections have been studied and all calculations have been carried out using the density functional theory at an ab initio level. it is found that the molecular length and the one - photon absorption intensity are quite strongly c orrelated factors, and that a corresponding correlation for the two - photon absorption is decreasing. it is also found that a most crucial role for the two - photon absorption is played by the n center

    我們分別以苯、二苯乙烯、噻吩為中心，氨基、二苯氨基和二乙氨基為電子給體，硝基為電子受體組合形成的分子為研究對象，在從頭計算的水平上用密度泛函理論計算了這些分子在低激發態下的單、雙光子吸收強度，重點研究了分子的長度、中心和給體的供電子能力對分子單、雙光子吸收的影響。研究結果表明，分子長度與單光子吸收強度之間有密切關系，而在雙光子吸收中這種關系較弱；中心在雙光子吸收中具有重要的作用；在中心和受體一定的情況下，增加給體的供電子能力，可提高雙光子吸收強度。
  3. Radiation spectrums of relativistic charged particles in a dipolar magnetic field were studied numerically in detail by using the current density of moving charged particles in this paper

    摘要從運動的荷電粒子產生的流密度出發，研究了在地球偶極磁場中運動的相對論性荷電粒子的輻射能量譜，並對其進行數值計算。
  4. With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed

    本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出真空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。
  5. We can get electron density with the calculated phase and some common model formula ( such as sphere and cone ) in the wake of hypervelocity projectiles

    由計算出的相位並根據彈道靶尾跡的一些常用模型（包括圓球體、鈍錐體等）公式，把相位轉化為尾跡的電子密度。
  6. Abstract : the effect of correction of self - consistent potential on electronic structure in simple cubic nanocrystal particles is calculated by means of the green ' s function method in the tight - binding approximation, taking only the nearest neighbor matrix elements into account. the numerical results show that the electronic energy spectrum is shifted, the chemical potential is not equal to the atomic energy level, the electronic density at each lattice point is changed, and the variation of electronic density at surface lattice point is the largest

    文摘:在緊束縛近似下，只計及最近鄰的矩陣元，採用格林函數計算了自洽勢修正對簡立方納米晶體顆粒的電子結構的影響，發現電子能譜發生了移動，化學勢不等於格點原子能級，各格點的電子密度也發生了變化，其中以表面格點的電子密度變化最大。
  7. The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied

    介紹了數值計算方法，包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。
  8. Nowadays with the booming development of microelectronic technique, the functions of the components of machinery, electricity, magnetism, optics, acoustics and thermotics have been improved rapidly. and the micromation of components, the integration of electronic equipments, the worse working environment, the increasing requirement and emi, all of these make the structural design of electronic equipments more and more important

    在微電子學高度發展的今天，促使機、電、磁、光、聲和熱等元器件功能飛速提高，隨著元器件微型化，電子設備趨向集成化，再加上一些日趨惡劣的工作環境，各種使用要求的提高，空間電磁環境的干擾，以及由於裝填密度高，產生的內在干擾等，使得電子設備的結構設計變得越來越重要。
  9. Numerical simulation results indicate that, for low temperature dust particles, dust particles mainly exist in the area near the column center and their charge - number can be considered as a constant, while in the area where there are no dust particles, ion and electrons are in ambipolar diffusion ; for high temperature dust particles, both the distribution regions of dust particle and high ion density are expanded and dust charge - number is increasing with the distance from the center

    計算結果表明：當塵埃粒子的溫度較低時，塵埃粒子主要集中在圓柱形放電器的中心很小的區域，塵埃粒子攜帶的電荷幾乎是一個常數，受塵埃粒子空間電荷的影響，離子在該區域的密度最高。在遠離中心區域，離子和電子呈現雙及擴散特點；當塵埃粒子的溫度較高時，塵埃粒子分佈的區域和高離子密度區域擴大，塵埃粒子離放電器中心越遠，攜帶的負電荷越多。
  10. Then these separated interferograms can be recorded by ccd camera the experiments with the multi - frame interferometer was carried out on a small gas - puff z - pinch device with 23 kv working voltage and 210 ka peak current and about 2 risetime, and good results were obtained

    該套干涉儀在小型噴氣式z箍縮裝置上進行了實驗， z裝置的工作電壓23kv 、峰值電流210ka 、電流上升時間約2 。根據干涉圖條紋的移動數，可以計算出等離子體的電子密度和運動速度。
  11. The automatic measurement system for artillery body inside chamber defect belongs to the application study of intelligent measurement technology. it is the effective combination and application of several technology including modern optics, precision mechanism, electronics and technique of computer. it is a kind of auto lossless detecting which applied computer real - time control to realize high precision and high efficiency

    火炮身管膛內疵病測試系統屬智能檢測技術的應用研究，是現代光學、精密機械、電子學與計算機等項高新技術在軍用技術中的有效組合及其應用，是應用計算機實時控制，實現高精度、高效率的自動無損檢測。
  12. However, it becomes independent on channel depth in strong inversion region, which is in accordance with numerical analysis

    結果進一步顯示，只考慮方形勢阱的量子力學結果，略高估計了閾電壓，且低估了電子密度。
  13. Numerical simulations were done to show the distortion of the wavefront and the interference pattern under several kinds of typical plasma density distributions. the ray path in plasma was calculated by the numerical solution of the vector equation of light ray, when the plasma density was closing to the critical electron density of the laser frequency. through the simulations, the factors that influence the measurement were found out under different density distributions and shapes of plasma

    在此基礎上，採用數值模擬的方法，計算了在幾種典型的等離子體密度分佈下，激光波面的變化和產生的干涉圖樣；並用光線矢量微分方程的數值解法計算了當等離子體密度接近光頻臨界電子密度時，光線在等離子體中的傳播路徑，從中掌握了在不同的等離子體密度和形狀下，進行干涉測量所應估計到的因素。
  14. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  15. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  16. The output spot - size of our non - flowing tea co2 laser is quite large, only slightly smaller than the section of the excited media, this agrees with the calculated spatial distributions of the initial electron density for pre - ionization well

    由我們的非流動型teaco _ 2激光器獲得的輸出光斑相當大，僅比激活區截面略小，這與理論計算的預電離初始電子密度空間分佈規律有較好的一致性。
  17. At the same time, the paper give out the investigation of x - ray interferometry in diagnostics of the electron density of laser produced plasma, and derived a modified term for wkbj solutions. at last, we proved these by numerical simulation

    接著，本文給出了x射線激光干涉法在激光等離子體電子密度診斷中的理論研究，給出了對原有干涉法理論修正，並用數值計算中加以了驗證。
  18. With numerical calculations, the influences of device structure, material parameters and operating conditions on the distributions of the equipotential line, current density, carrier concentration, optical field and temperature profiles have been investigated, and the interactions between the correlative characteristics have been studied at the same time

    通過對這些相互關聯的特性進行數值計算，分析了器件結構、材料參數和工作條件等對等勢線分佈、注入有源區的電流密度、有源區中的載流子濃度、光場強度以及溫度分佈的影響，並研究了這些特性之間的相互影響。
  19. The theoretical calculations and the experiments suggest that, double pre - ionization has an obvious advantage for increasing the initial electron density between the main electrodes

    理論計算與實驗表明，雙預電離在提高主電極間初始電子密度方面存在著明顯的優越性。
  20. We have designed a set of ultraviolet probe and holographic interferometer system on " xg - ? " laser facility, where probe wavelength can be short as 0. 308nm. igoring effect of magnetic field, electron density can be measuremented exactly. in this paper, holographic interferometry is interpreted in detail and and the experimental results are presented and analysed

    我們在「星光」裝置上設計了一套紫外超短脈沖激光探針及其全息干涉系統，該系統探針光波長可以短到0 . 308nm ，在這樣的情況下忽略磁場效應可以比較精確地測量等離子體冕區（ 0 . 1n _ o ）電子密度。
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