電子束沉積 的英文怎麼說

中文拼音 [diànzishùchénjī]
電子束沉積 英文
electron beam deposition
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 電子 : [物理學] [電學] electron
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions

    文摘:在電子散射能量沉積為雙高斯分佈的前提下，提出了一種提取電子束光刻中電子散射參數，和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值，在實驗數據處理中使用歸一化方法.此外，用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正
  2. Surface modification of h13 steel by arc deposition of al film and high current pulsed electron bombardment

    13鋼電弧沉積鋁膜及強流脈沖電子束后處理的復合改性研究
  3. Simulation calculation for the energy deposition profile and the transmission fraction of intense pulsed electron beam at various incident angles

    不同入射角度下強流脈沖電子束能量沉積剖面和束流傳輸系數模擬計算
  4. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  5. Ito substrate with an smooth surface of 0. 2nm rms roughness measured by afm was obtained by the developed pre - cleaning processing procedure. mbe growth of znsxse1 - x thin films on ito coated glass substrates were carried out using zns and se sources. the xrd 9 / 29 spectra resulted from these films indicated that the as - grown polycrystalline znsxse1 - x thin films had a preferred orientation along the ( 111 ) planes

    採用分子束外延技術在ito導電玻璃上低溫沉積了zns _ xse _ （ 1 - x ）多晶薄膜，詳細研究了薄膜制備的工藝參數，在最佳沉積條件下，制備獲得了晶型為立方閃鋅礦，並具有（ 111 ）面高度定向生長結構的柱狀zns _ xse _ （ 1 - x ）多晶薄膜，其rms表面粗糙度最小可達1 . 2nm 。
  6. Manufactures pressure sensors, transducers, load cells, accelerometers, force sensors and strain gages from stock. specialist in micro - miniaturization and applications of semiconductor, thin film, metallic foil and hybrid circuit technologies for the measurement of acceleration, force, and pressure in a multitude of environments

    -提供薄膜制備微粉制備真空冶金分子束外延磁控濺射化學氣相沉積電子束鍍膜激光鍍膜甩帶機磁控電弧爐空間環境模擬等設備
  7. Energy deposition of relativistic electron beam in plasmas

    相對論電子束在等離子體中的能量沉積
  8. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  9. The energy calibration is more accuracy and almost constant with the injected energy of proton. however, the energy calibration in e1 detector has a slight decrease with increasing the energy of protons. the reasons are attributed to the non - uniformity in thickness and disturbing from surrounding r, b ray and secondary particles

    對氧離子的能量刻度採用的是l八2 . 75的擋別，在能量范圍o一50mev有很好的線性關系，刻度出的每道能量h是1 . 1mev /道，然而當束流能量達到80mev /道時，在e ，探測器中h值與前面能量點的數據符合較好，但在e :探測器中沉積能量高於50mev時，電子學系統進入飽和狀態。
  10. It is namely that the substrate temperature is about 250, the deposit rate must be slower than 10 a / s and the film thickness must be selected according to the optical and electronic needs of the films

    通過極差法確定了在電子束蒸發制備條件下得到的最佳光電性能的azo薄膜的工藝條件是：基片溫度在250左右、沉積速率不大於10a s 。
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