電子束蒸發法 的英文怎麼說

中文拼音 [diànzishùzhēngfāfǎ]
電子束蒸發法 英文
electron-beam evaporation
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 蒸 : Ⅰ動詞1. （蒸發） evaporate2. （利用水蒸氣的熱力使食物熟或熱） steam Ⅱ名詞[中醫] （將藥物隔水蒸熟） steaming
  • 發 : 名詞（頭發） hair
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  • 電子 : [物理學] [電學] electron
  • 蒸發 : [物理學] [化學] evaporation; evaporate蒸發計 evaporometer; evaporimeter; atmidometer; atmometer; ...
  1. Azo is deposited by electronic beam evaporation on the k9 substrates

    本文用電子束蒸發的方法在k9玻璃上制備了azo薄膜。
  2. 3. polycrystalline lif thin films were grown by thermal evaporation on amorphous substrates. properties of broad band photo - luminescence at room temperature of active channel ( f2 and fa + ) produced by electron beam irradiation were studied

    首次用熱蒸發法在玻璃襯底上制備了多晶lif薄膜平面波導，研究了由電子束照射產生的有源（ f _ 2和f _ 3 ~ +色心）溝道的室溫寬帶光致發光特性。
  3. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  4. In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process

    本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。
  5. Tungsten oxide and nickel oxide films were prepared by electron beam evaporation method, and the effect of annealing techniques of the electrochromic properties of these films was discussed

    本論文利用電子束蒸發方法制備氧化鎢、氧化鎳薄膜的基礎上，研究了熱處理工藝對于薄膜電致變色性能的影響。
  6. The chemical composition, micro - structure and optical properties and its application of tio2 thin films deposited on k9 glass by using reactive electron - beam evaporation ( reb ) are studied through sem, tem, xps, xrd, spectroscopic ellipsometry ( se ) and uv - vis spectrophotometer in the dissertation, and the progresses of nucleation and growth of thin film are discussed from the point of view of dynamics and thermodynamics so that a structure model of tio _ ( 2 ) thin film is brought forward

    本文採用sem 、 tem 、 xps 、 xrd 、橢圓偏振儀（ se ） 、 uv - vis分光光度計等分析手段系統地研究了電子束反應蒸發方法在k9玻璃上制備tio _ 2薄膜的成分、結構和光學性能以及tio _ 2薄膜在光學多層膜中應用，並開發了膜系設計軟體。文中還從動力學和熱力學角度分析了tio _ 2超薄膜的形核生長過程，得出了tio _ 2薄膜的組織結構模型。
  7. In this paper, high quality transparent and conductive al - doped zno thin films on quartz substrates are prepared by electron beam evaporation technique

    本文採用電子束蒸發方法在石英襯底上制備出質量較好的al摻雜的zno薄膜材料。
  8. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  9. And the highly ( 100 ) oriented pt / tb films was successfully prepared, the orientation mechanism can be - bfeadened - to the appirea | i other oriented films pfe pt / tb thin films as raw materials, the single - crystal, ultra - long, uniform lead oxide nanowires were successfully prepared with new method

    同時發現這種薄膜可通過高能量電子束蒸發的方法成功制備pbo單晶納米線，這種方法可望被應用於其他氧化物單晶納米線的制備。另外， mcnt的摻雜使pt薄膜結晶溫度下降。
  10. The best annealing condition of the zno films grown by electron beam evaporation technique was achieved

    採用電子束蒸發的方法在si襯底上生長zno薄膜，通過退火實驗，得到了最佳的退火條件。
  11. The synthesis of a single - crystal, ultra - long, uniform lead oxide nanowires were observed in a high vacuum chamber with the electron beam bombard in the tb doped pt thin films derived from sol - gel process

    在高真空環境中用高能量電子束對pt t薄膜進行蒸發這種全新的方法，制備出直徑在6 60nxn之間、長徑比高達100的筆直pbo單晶納米線。
  12. 5. the substances which have good optical properties are chosen as preparation

    採用電子束蒸發的方法在k9光學玻璃上得到了光學性能良好的光學薄膜。
  13. Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator

    首次採用超高真空電子束蒸發的方法在多孔硅上成功地外延出晶體質量和電學性能良好的單晶硅。
  14. It is namely that the substrate temperature is about 250, the deposit rate must be slower than 10 a / s and the film thickness must be selected according to the optical and electronic needs of the films

    通過極差法確定了在電子束蒸發制備條件下得到的最佳光電性能的azo薄膜的工藝條件是：基片溫度在250左右、沉積速率不大於10a s 。
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