電子發射率 的英文怎麼說

中文拼音 [diànzifāshèlǜ]
電子發射率 英文
electron emissivity
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 發 : 名詞（頭發） hair
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 電子 : [物理學] [電學] electron
  1. Ceo22 is used as optical materials, polishing agents, ultraviolet absorption materials, the cleaning catalyst of car ' s waste gases, chemical decolorant of glass, radiation - resisting glass permanent magnet, electronic ceramics etc. if it is processed into nanoparticles, it will exhibit some novel properties led to varied applications. for example, ceo22 nanocrystal is a better promoter of cytochrome c and the stabilizer of zro22 ceramics. because of its high index of refraction and good stability, it is used to produce reduced reflection film

    Ceo _ 2是一種廉價而用途極廣的材料，如用於發光材料、拋光劑、紫外吸收材料、汽車尾氣凈化催化劑、玻璃的化學退色劑、耐輻射玻璃、永磁體、電子陶瓷等，其納米化后將出現一些新的性質及應用，如ceoz納米晶是細胞色素c的良好的催進劑，還用作zro :陶瓷的穩定劑，由於ceo :折射率高，穩定性好，常用於制備減反射膜等。
  2. Those above exploitation of technologies created good conditions for our company to develop the important new products such as the super high power launching tubes and the export electronic tubes and so on

    上述工藝的開發成功為我公司超大功率廣播發射管和出口的電子管等重點新產品的研製創造了良好的條件。
  3. Duo to the intrinsic characteristics of the gaas material, serai - insulating ( si ) gaas photoconductive semiconductor switches ( pcss " s ) have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss " s made of other materials and then can be widely used in ultrahigh speed electronics, field of high power microwave generation and pulse forming ( pulse sources of high power ultra - fast electromagnetism, ultra - wide - band microwave generator )

    半絕緣gaas光電導開關（ photoconductivesemiconductorswitches簡稱pcss ' s ）具有兼備寬頻帶和高功率容量特性，使其在超高速電子學和大功率脈沖產生與整形技術領域（大功率亞納秒脈沖源、超寬帶射頻發生器等）具有廣泛應用前景。
  4. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  5. Subnanosecond millimeter relativistic backward wave oscillator, based on superradiance mechanism, was a novelty microwave device developed in last few years. the dependence of peak power on the square of the density of electron beam is almost linear

    基於超輻射機理的亞納秒毫米波微波器件是近幾年發展起來的一種新型微波器件，其輻射功率與參與束波互作用的電子束密度的平方成正比關系。
  6. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  7. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  8. At present, feas have potential for use as an electron source in a wide variety of applications, including microwave power amplifiers ( such as twts, klystron ), flat panel displays, electron microscopy, and electron beam lithography

    目前，場致發射陣列陰極的應用領域十分廣泛，主要包括微波器件（應用於twts ， klystron等） 、平板顯示器（ feds ） 、電子顯微鏡及電子束刻蝕系統等。其中，應用研究的焦點主要集中在平板顯示器和射頻功率放大器。
  9. To construct and analysis the ttd demo module, the mems devices substitute for the former electric devices, then succeed to obtain the rf mems front - end r / t system which can communicate with each other

    最後，用mems器件代替傳統電子器件，成功建立1 . 88ghzpcb級rfmems前端收/發模塊，達到了合理的發射功率和接收靈敏度，成功收發信號。
  10. ( 5 ) from august, 2002 to april, 2003, on the base of analyzing of 10kw valve tv transmitter of channel 14, chongqing tv transmitting station, brought forward process the solidification scheme to 400w valve power amplifier of the driver

    重慶大學碩士學位論文中文摘要（ 5 ） 2002年8月至2003年4月期間，在對重慶電視發射臺14頻道（ uhf ） 10kw電子管電視發射機進行研究分析的基礎上，提出了對該機末前級400w電子管功率放大器進行固態化改造的方案並予以實施。
  11. On the base of summarizing and reference to the achievement of uhf complete solid - state high - frequency power amplifier abroad, the author have made a deep research in uhf 10kw electron tube tv transmitter power amplifiers which are widely used inland, and asked for ideas of a lot of engineers of chongqing tv transmitting station, brought forward a practicable solidification scheme under the guidance of prof. gao chao and prof. guoyongcai, and made a successful practice at chongqing tv transmitting station

    筆者在總結和借鑒國內外有關uhf全固態電視發射機高頻線性功率放大器研究成果的基礎上，對目前國內電視發射臺普遍採用的uhf10kw電子管電視發射機高頻線性功率放大器進行了深入研究，並廣泛徵求重慶電視發射臺工程師的意見，在重慶大學高潮教授和郭永彩教授的指導下，提出了切實可行的固態化改造方案，並在重慶電視發射臺實踐成功。
  12. The rate of single event upset ( seu ) for space - based missions has been predicted by means of ground - based particle accelerator test and simulation calculation based on models of space radiation environment and the interaction of ions with the microelectronic device

    我們採用的方法是用地面重離子加速器模擬實驗和計算機模擬空間輻射環境進行單粒子翻轉率預估計算。引發單粒子翻轉的空間高能帶電粒子環境包括銀河宇宙線，太陽宇宙線和地球輻射帶中的高能質子及重離子。
  13. The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method

    本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。
  14. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  15. Silicon lasers could lead to affordable light - based systems that harness photons instead of electrons to shuttle huge amounts of data swiftly ? at multigigabit - per - second rates

    有了矽雷射之後，科學家就可製作出全光學系統，以光子取代電子，快速收發大量資料，最高速率可達每秒數十億位元。
  16. However, the most commonly used x - ray sources didn " t change much no matter in structure or theory, still using thermionic cathodes as electron sources. such conventional x - ray tubes have some defaults, such as big volume, low frequency response, demanding for supply to cathode that was also brittle

    目前使用的x光源的基本特點是採用熱電子發射形式即採用熱燈絲作為電子發射源，在高壓加速下轟擊陽極產生x射線，這樣的光源體積較大，需要加熱陰極的電源，且對頻率響應慢。
  17. They also have the highest and most stable electron emissions rate recorded, researchers say

    研究人員稱，它們還擁有記錄到的最高和最穩定的電子發射率。
  18. As for the tv transmitter of uhf of which the power grade is above 10kw, the valve power amplifier such as the electron tube, klystron and iot are widely adopted in high - frequency linear power amplifier

    功率等級在10kw以上的uhf （特高頻）電視發射機，其高頻線性功率放大器普遍採用電子管、速調管、感應輸出管（ iot ）等電真空管放大器件。
  19. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
  20. The charactesistics of two - dimension spectra obtained by inductively coupled plasma atomic emission spectrometry ( icpaes ) with charge injection detection ( cid ) in frequency domain were studied in the present paper

    摘要本文對電感耦合等離子體原子發射光譜分析（ icp - aes ）中電荷注入檢測器（ cid ）得到的二維光譜的頻率特性作了研究。
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