電子致發光 的英文怎麼說

中文拼音 [diànzizhìfāguāng]
電子致發光 英文
cathode luminescence
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 致 : Ⅰ動詞1 （給與;向對方表示禮節、情意等） deliver; send; extend 2 （集中於某個方面） devote （one s ...
  • 發 : 名詞（頭發） hair
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 電子 : [物理學] [電學] electron
  • 發光 : 1 （發出光來） give out light; shine; be luminous; brighten; fulgurate; flash; glow; sparkle; gli...
  1. The direct application of eftl is flat panel displays. it has several preferences, emissive, wide view angle, quick response, wide working temperature range, high pixel resolution, anti - strike, long life, less number of fabrication process etc. all these properties are better than plasma display fed and lc

    它的主動顯示、平板化、視角大、反應快、工作溫度范圍寬、像素鑒別率高、抗震動、壽命長、工序少等特點，都勝過液晶、等離子體、 lc等顯示技術：第一章介紹了無機電致發光及有機電致發光的發展現狀和存在問題。
  2. Synthesis and molecular design of electroluminescent poly p - phenylene vinylene

    類電致發光聚合物的合成及分子設計研究
  3. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.

    光致發光過程就是高能量光子照射到晶體上之後，晶體所產生的電子一空穴對的輻射復合過程。
  4. As the increasing of concentration, the host and guest interconverted, and the more the charge been transferred, the more the total energy decreased. finally, we deduce that the doping of rubrene in pvk just acting as traps in electroluminescent devices, and its trapping electrons arrested many cavities in pvk. and so, more pvk who did n ' t transport energy was concerned with trop and it makes less pvk was concerned with energy transfer in photoluminescent devices than in electroluminescent devices

    基於光致發光和電致發光中pvk與rubrene發光強度的不同，我們對低摻雜時的電致發光和光致發光進行了比較，並提出：在電致發光中， rubrene的摻入在pvk鏈間相當于陷阱，其陷阱電子對pvk空穴的吸引，使一部分在光致發光中不參與能量傳遞的pvk參與了這種陷阱作用，使得在電致發光中不參與能量傳遞的pvk可能比光致發光中少。
  5. This paper mainly discusses the design of the single - photon - counter. electroluminescence ( el ) is a weak light with its power under 10 - 16w, which can, t be detected with conventional method

    絕緣聚合物的電致發光一般都非常微弱，功率都在10 - 16瓦以下，是典型的單光子，這給測試工作帶來很大的困難，必須研製特殊的測試儀器。
  6. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  7. Polarized microscopy, sem - eds, xrf, uv - vis, pl, ftir, epr have been used in this study to investigate two chameleon diamonds and a synthetic diamond which show color - change effects

    摘要對具有變色效應的兩顆變色龍金剛石與一顆鮮黃色合成金剛石進行了掃描電鏡能譜、 x射線熒光光譜、顯微紅外光譜、紫外可見吸收光譜、光致發光譜、電子順磁共振譜等測試研究，以探討引起金剛石變色的原因。
  8. This paper summarizes the progress of the molecular organic el materials, especially highlighting the oligomer and carrier - transporting emitters

    本文主要介紹近年來有機分子電致發光材料最新的發展，並特別討論了齊聚物和含載流子傳輸單元的發光體。
  9. The advance, the applications in organic light - emitting diodes ( oleds ) and the future r & d directions of the well developed types of organic red emitters, such as transition metal complexes, intra - molecular charge transfer ( ict ) compounds, condensed aromatic hydrocarbons and oligomers are discussed

    本文總結了近年來有機金屬配合物、分子內電荷轉移化合物、稠環芳香類化合物以及齊聚物等幾類有機電致發光紅色發光材料的研究進展，詳細介紹了它們在有機電致發光器件中的應用，並對有機電致發光紅色發光材料未來的研究方向作了展望。
  10. This is attributed to the stabilization of the excited state of intermediate of luminol by the interaction with the positively charged pee modified layer

    荷正電的聚乙烯亞胺修飾分子與魯米諾激發態3 -氨基鄰苯二甲酸陰離子間靜電相互作用而導致的激發態穩定性增加;對魯米諾分子的電化學發光的增強起著關鍵作用。
  11. 3. polycrystalline lif thin films were grown by thermal evaporation on amorphous substrates. properties of broad band photo - luminescence at room temperature of active channel ( f2 and fa + ) produced by electron beam irradiation were studied

    首次用熱蒸發法在玻璃襯底上制備了多晶lif薄膜平面波導，研究了由電子束照射產生的有源（ f _ 2和f _ 3 ~ +色心）溝道的室溫寬帶光致發光特性。
  12. The research progress of 1, 8 - naphthalimide as organic small molecular electroluminescent materials was reviewed and the structure features and related theory were introduced

    摘要綜述了近年來1 ， 8 -萘酰亞胺類小分子電致發光材料的研究進展，作了結構特點和相關理論的說明。
  13. We analysize the structure and properties of oel materials and used them as oel or carrier - transporting materials in oelds with ito as anode and al as cathode. the results of oel were achieved. the influential factors are discussed

    將多種有機材料分別用作發光材料和載流子傳輸材料，以ito導電玻璃作為陽極，金屬鋁作為陰極，制備的有機薄膜電致發光器件，具有發光性能，獲得了電致發光結果。
  14. The organic electroluminsecence devices : ito / tpd / alq3 / al were fabracated by reactive evaporating deposition and dc glow discharge plasma enhanced reactive evaporating ways. the effects of the organic film thickness on the electronic and optical property have been investigated

    使用真空蒸發沉積技術和直流輝光等離子體輔助反應蒸發沉積技術制備了四層結構的有機電致發光器件： ito / tpd / alq _ 3 / al ，對制得的器件進行了電學和光學性能的測試。
  15. By analyzing their energy offset on the interfaces, we found that the introduction of ii - vi compounds replaces the original steep barrier with ladder - like barriers. the injection probability becomes the production of two injection probabilities through lower barriers and become larger than the original one. in chapter 5 we want to utilize the deeper, dynamical ( in addition of static ) properties of semiconductor to reinforce the luminescence of oel

    為使類陰極射線發光同有機電致發光集成，我們設計了非對稱結構al sioz mnppvn ， mn ppv中的發光是由於從sioz出來的電子和從ld注人的空穴的復合，而由於sioz中的電子的倍增過程，從sioz層出來的電子能量不是單一的，而有一個從低能到高能的分佈。
  16. Hydrogenic impurities in low dimensional semiconductor structures have been studied extensively. electric field applied perpendicularly to the layer of quantum wells can change the optical properties ( abstraction, reflection and photoluminesce - nce ) of semiconductor quantum well structures

    而在垂直於量子阱平面的方向外加電場可以顯著的改變半導體量子阱結構的光學性質（如吸收、反射、光致發光等） 。
  17. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  18. After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes, the theoretical model of the leds * light - emitting efficiency was presented. based on this model, the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically, we found the calculated results agreed very well with the experimental results under the electric field from 0. 5 x 106 to 1. 5 x 106v / cm, the numeral calculations and theoretical analyzes of the light - emitting efficiency were done. the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination, the light - emitting efficiency was affected by many factors

    本文主要研究聚對苯乙炔（ ppv ）薄膜發光二極體發光效率及主要影響因素，簡單地介紹了ppv薄膜發光二極體的研究背景及發展趨勢、 ppv器件的結構和性質后，提出了一個計算器件發光效率理論模型，利用這個理論模型得出了發光效率公式的表達式：並對注入電流、復合效率等進行了數值計算，通過合理地選擇計算參數，發現計算值在場強為0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范圍內與實驗結果較好地符合，在此基礎上，對發光效率進行了數值計算和理論分析，結果表明：計算結果與理論研究結果相符較好，得出結論如下： （ 1 ）本文的理論推導正確地反映了器件中載流子的注入、傳輸和復合等基本機制； （ 2 ） ppv薄膜中的電致發光是激子復合的結果，發光效率受多種因素影響。
  19. Tld standard practice for application of thermoluminescence - dosimetry systems for determining absorbed dose in radiation - hardness testing of electronic devices

    電子器件輻射硬化試驗中測量吸收劑量用的熱致發光劑量測量
  20. Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively

    其次，由於一直以來藍光oled器件的研究處于相對落後的狀態，其發光亮度、效率、穩定性和色純度都無法綠光器件相比，所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 ）研究了雙異質型藍光oled器件，由於本研究引入了空穴阻擋層，使得載流子的復合和激子的擴散被限定在發光層內，器件的發光效率達到了1 . 90lm / w ，最大亮度達到了10000cd / m2 ，比傳統結構器件的效率和亮度提高了約一個數量級; 2 ）制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件，研究發現，當改變各有機層厚度時，器件的電致發光光譜發生了從綠光到藍光的移動。
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