電子衍射 的英文怎麼說

中文拼音 [diànziyǎnshè]
電子衍射 英文
diffraction of electon
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 衍 : [書面語]Ⅰ動詞（開展; 發揮） spread out; develop; amplifyⅡ形容詞（多餘） redundant; superfluousⅢ名...
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 電子 : [物理學] [電學] electron
  1. Photoelectron diffraction studies on gaas surface by energy scan mode

    面能量掃描的光電子衍射研究
  2. Experimental basis of quantum physics : photoelectric effect, compton scattering, photons, franck - hertz experiment, the bohr atom, electron diffraction, de broglie waves, and wave - particle duality of matter and light

    量子物理的實驗基礎：光電效應，康普頓散射，光子，法蘭克-赫茲實驗，波爾原子模型，電子衍射，德布羅意波以及物質與光的波粒二項性。
  3. The epitaxial growths of ingaas / gaas / algaas fundamental material and the fabrication of 45 - deflector are extensively studied in our work. some measuring methods are used to evaluate the growth quality of our grown structure by pl, cv, x - ray double crystal diffraction, sem etc. property analysis are provided for it

    利用高能電子衍射、電化學c - v 、掃描電鏡（ sem ） 、 x射線雙晶衍射儀、光熒光譜儀（ pl ） 、原子力顯微鏡等多種方法對制備的器件進行了檢測，同時對實驗結果進行了必要的分析。
  4. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  5. The melted tungsten carbide would react with the steel matrix on the interface and the reaction zone was observed as a result. the reacting production was examined as fe3w3c by means of x - ray diffraction and scanning electron microscopy analysis. the reaction between tungsten particle and steel matrix could improve the interfacial bonding strength remarkably

    Wc鋼復合材料的制備過程中， wc顆粒在高溫下發生了局部溶解並在wc顆粒和鋼基體界面處發生了界面反應； x射線衍射和電子衍射花樣分析表明，反應產物為高穩定性的fe _ 3w _ 3c ，界面反應有效地改善了wc顆粒與鋼基體的界面結合。
  6. The orientation relationships between cu and mgo are determined by means of electron diffraction patterns. the interface structures are analyzed according to high - resolution images of tem, csl and 0 - lattice theories and verified by simulation computation method

    通過電子衍射圖確定了cu與mgo之間的各種取向關系；根據高分辨像對界面結構進行了研究；通過計算模擬驗證了重位點陣和o -點陣理論。
  7. By carefully checking the leed pattern, it is found that the " ( 2x2 ) " pattem is actually a combination of the c ( 2 x 2 ) reconstruction from the ersi, island surfaces and the ( 2x l ) reconstruction from the bare si substrae

    對（ x2 ）再構的低能電子衍射的仔細研究表明，實驗中觀察到的px2 ）再構實際上是來自於餌硅化物的葉x2 ）再構與來自硅表面的cxi八門2 ）再構的迭加產物。
  8. The x - ray diffraction ( xrd ) spectra indicate that the ceo2 nanowires are cubic crystalline structure

    用x射線電子衍射觀察了ceo :納米線是立方晶體結構。
  9. High electron energy diffractometer hee

    高能電子衍射儀
  10. Effects of oxygen pressure on microstructure of lno conductive thin film has been studied by in situ reflection high energy diffraction ( rheed ) and ex situ x - ray photoelectron spectroscopy ( xps ). in the relatively low oxygen pressure, lno film displays spotty rheed pattern

    首先，通過原位高能電子衍射（ rheed ）及x光電子能譜（ xps ）研究了氧分壓對lno導電薄膜微結構的影響，並進一步提出了氧分壓對lno薄膜微結構的影響的機理。
  11. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  12. Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed

    本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。
  13. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  14. No87 ： two - stage image processing in high resolution electron microscopy, f. h. li, proc. intern. congress on electron microscopy, paris ( 1994 ) vol. 1, 481 - 4

    高分辨電子顯微術與電子衍射相結合測定晶體結構，李方華，自然科學進展- - -國家重點實驗室通訊， 3 （ 1993 ） 385 - 394
  15. The morphologies of powder were observed by using high - resolution transmission electron microscopy ( hrtem ) ; x - ray diffraction ( xrd ) pattern was used to analyze the phases of the powder ; energy dispersive x - ray spectroscopy ( edx ) was used to analyze the component of composite powder

    用高分辨電鏡觀察復合粉體的形貌，進行電子衍射分析；用d / 3ax3b型x射線衍射儀作復合粉體的物相分析；用pv9900型能譜儀作復合粉末的成分分析。
  16. Hrtem studies indicate that the si1 - xcx alloy has a high carbon concentration and possesses an ordered superlattice structure

    電子衍射和hrtem表明該材料具有傳統硅碳材料所不具備的長程有序和超點陣結構。
  17. Selected area electron diffraction image

    選區電子衍射象
  18. Method of selected area electron diffraction for transmission electron microscopes

    透射電子顯微鏡選區電子衍射分析方法
  19. Saed ( selected area electron diffraction ), hrem ( high resolution electron microscopy ) and eds ( energy dispersive spectrum ) experiments confirmed that both the porous layer and lamellar layer are composed of nano - crystalline ha ( hydroxyapatite )

    實驗中採用了選區電子衍射、高分辨觀察和x - ray能譜等實驗手段，分析了羥基磷灰石各層的形態、成分與微結構。
  20. More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3

    利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。
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