電子轟擊 的英文怎麼說
中文拼音 [diànzihōngjī]
電子轟擊
英文
bombardment of electrons- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 子 : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
- 轟 : Ⅰ象聲詞(指雷、炮擊等發出的巨大聲音) bang; boom Ⅱ動詞1 (雷鳴; 轟擊; 爆炸) rumble; bombard; exp...
- 電子 : [物理學] [電學] electron
- 轟擊 : (用炮火攻擊或用中子等撞擊原子核) bombard; bombardment; shell
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We have shown that it is possible to create a radioactivity characterized by the emission of positive or negative electrons in boron and magnesium, by bombardment with alpha rays
我們已經展示了人工放射現象的可能性,這種放射現象的特徵是用以射線轟擊用咄硼和鎂中的正電子或負電子。Electron impact mass spectra of heterocyclic derivatives bearing 1 - aryl - 5 - methyl - 1, 2, 3 - triazole
三唑的雜環衍生物的電子轟擊質譜It was found that the schorl or dravite in schorl - dravite group that is produced from pegmatite and has good crystal degree had a strong intensity of spontaneous polarity by electron - beam bombardment and x - ray diffraction of varying the temperature
利用電子束轟擊結合變溫xrd分析發現在schorl - dravite系列電氣石中,產于偉晶巖的,結晶度比較高的mg電氣石或fe電氣石具有較高的自發極化強度。Ion bombardment secondary electron image
離子轟擊二次電子象The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron, includes the process of electron - simulated desorption ( esd ), the process of desorption gas ionization and the process of the ion influencing the flashover
Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎,包含了電子誘發脫附( esd ) ,和脫附氣體離子化並對閃絡過程產生影響等過程,對表面閃絡現象進行了解釋。Elastic recoil detection technique with high depth resolution has been developed at the hi - 13 tandem accelerator of ciae. with high quality beam which was used for bombarding target, the recoils were detected with q3d magnetic spectrometer following a focal plane detector and a ae - e telescope detector with longitudinal double - room ionization chamber
該系統用高質量的重離子束轟擊薄膜或塊材靶樣品,利用q3d磁譜儀及其焦面探測器和縱向型雙電離室e ? e望遠鏡探測器兩套探測系統,在前角區測量了靶中各種元素的反沖能譜。Electron impact ion source ; ei source
電子轟擊離子源Silicon wafers are zapped with ions, which form tiny islands with either an excess or a dearth of electrons
矽晶圓用離子轟擊,而在其上形成微小的島,各自具有過量或是不足的電子。Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film
第二章和第三章分別從引入離子轟擊和施加直流偏壓電場兩方面著重研究了外界條件作為輔助手段對非晶碳生長的影響。Charged particle bombardment
帶電粒子轟擊Xrd analysis at different depth of zro2 sintered body indicates that it has trace to be bombarded by high - energy particles at top surface, this results are the evidence for the existence of pulse electric field
Zro _ 2燒結體不同深度的xrd分析表明:樣品表面有被高能粒子轟擊過的痕跡,脈沖電場誘發場發射電子及高能c粒子對樣品表面轟擊。When they reach the axis that the laser pulse is traveling along, they overshoot and end up traveling outward again, producing a wavelike oscillation [ see box on preceding page ]
當電子到了雷射脈沖所經過的軸,就會再次受到轟擊,而再次向外運動,產生如波動般的震? (見前頁在電子泡泡里) 。Next, the scientists used chemicals to dissolve the resist that the electrons had struck.
然後,科學家們用化學方法把電子轟擊過的抗蝕層溶解掉。A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation
利用離子束增強沉積設備,在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時,用氬、氫混合束對沉積膜作高劑量的離子束轟擊,使得被氬離子轟擊后斷鍵的氧化釩分子,再被注入氫降價,然後經適當的退火,成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜(國外報道值為2 - 3 ) ,並研製了單元懸空結構探測器和8 1 , 16 1線性陣列。The mechanical property, light transmittance of ion exchange strengthened solar cell cover glass and the effect of ion beam bombardment on its properties are investigated by dynamic mechanical analyser ( dma ), microscope, sem, uv / visible spectrophotometer and micro hardness instrument respectively
摘要系統研究了太陽能電池蓋片玻璃經離于交換增強(化學鋼化)后的機械性能、透光率以及離子束轟擊對蓋片性能的影響。In the hipib strengthening experiments, samples of high - speed steel ( w6mo5cr4v2 ) were irradiated by abstract hipib ( cn + = 30 %, h + = 70 %, ion energy 250 kev, ion current density 60 - 180a / cm2, pulse duration 80 - 100 ns ). microstructure investigation and properties characterization of the treated hss samples were carried out to investigate the effect of current density and pulse number of incident hipib on the surface modification treatment. the physical mechanism of the hipib - solid interaction was established based on the experiments
在hipib轟擊材料表面方面,本文選擇成分由c ~ ( n + ) ( 30 )和h ~ + ( 70 )組成、加速電壓為250kv 、脈沖寬度為80 100ns的hipib對高速鋼( w6mo5cr4v2 )進行表面輻照處理,研究離子束流密度和脈沖次數對高速鋼微觀結構和宏觀性能的影響,探討了hipib與材料表面相互作用的物理機制。From time to time, the sun produces bursts of energetic ions and electrons ; furthermore, charged particles are a major component of the galactic cosmic radiation that constantly bombards our solar system
太陽有時會爆發高能的離子與電子;再者,以帶電粒子為主成份的銀河宇宙射線,也會頻頻轟擊我們的太陽系。Electron impact ionization ei
電子轟擊離子化Electron impact desorption ei
電子轟擊解吸Electron impact source, ei
電子轟擊離子源分享友人