電子遷移率 的英文怎麼說

中文拼音 [diànziqiānyílǜ]
電子遷移率 英文
electron mobility
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 電子 : [物理學] [電學] electron
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  2. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  3. With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis

    隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。
  4. The filled skutterudite compounds attract aboard attention owing to their high mobilities and relatively large seebeck coefficients in the middle temperature range of 600 - 800k. but their thermal conductivities are very high, so the problem how to decrease their lattice thermal conductivities and improve their zt values becomes a research hotspot

    填充式skutterudite化合物由於在中溫領域（ 600 800k ）具有很高的載流子遷移率和較大的seebeck系數而引起人們的廣泛關注；但其熱導率k較高，因而如何降低晶格熱導率kl ，提高其熱電性能指數zt值已成為研究的熱點。
  5. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  6. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  7. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  8. In order to study the expression of 3 - defensins in liver as acute phase response proteins, a murine systemic acute phase responsive model was established by intraperitoneal injection o f lipopolysaccharide ( lps ) in our study. the mbd3 cdna sequence ( 145 - 169 bp ) was labled with [ - 32p ] atp as a probe to detect mbd3 mrna in different tissues by northern blot and analyze the time - and dose - dependant expression caused by lps. the 5 " flanking sequence ( - 167 - 179 bp ) of the mbd3 gene was designed as the probe and labled with [ - 32p ] dctp to investigate the binding of transcriptional factors to this region by electrophoretic mobility shift assay ( emsa ) and south - western blot

    以小鼠mbd3基因145 ? 169bpcdna序列合成探針，經[ - ~ （ 32 ） p ] atp標記后通過northernblot方法檢測mbd3在肝臟中的表達，同時分析了mbd3基因誘導表達的組織特異性，劑效和時效關系；結合mbd3基因啟動子區序列分析，以- 164 ? - 179bp雙鏈dna序列合成探針，經[ - ~ （ 32 ） p ] dctp標記后通過電泳遷移率改變實驗（ emsa ）和south ? westernblot方法對參與mbd3在肝臟中誘導表達調節的轉錄因子進行分析。
  9. The results of emsa showed the obvious retardant bands, which suggest that some proteins in nuclei can bind to the specific dna sequence of mbd3 gene after lps treatment. 5. the molecular mass of this dna binding protein was assessed between 43. 0 - 66. 2 kd by south - western blot

    4 .電泳遷移率改變實驗有明顯的滯后帶形成，表明lps刺激后，肝臟組織的細胞核內有轉錄因子與mbd3基因特異的dna序列結合，參與mbd3基因的誘導表達5 . south一westemblot進一步確定此轉錄因子分子量在43 . 0一「 . 2kd之間。
  10. High electron mobility transistor hemt

    高速電子遷移率晶體管
  11. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  12. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  13. Carrier will be capture by trap, the number of electric carrier will decrease. the trap hold back carrier to move from crystal to other crystal. it influences the electrical properties of tft

    陷阱在浮獲載流子之前是電中性的，但是在俘獲載流子之後就帶電了，在其周圍形成一個多子勢區，阻擋載流子從一個晶粒向另一個晶粒運動，導致載流子遷移率下降，導致tft的電學性能下降。
  14. Finally, after the long - term ion migration test, we analyzed the relation between the current and accumulative charge with the test time, computed the ion mobility and migration distance, and analyzed the distribution variety of na + and k + in the test samples

    對10支試品進行了長期離子遷移試驗，測量了泄漏電流曲線和累計電荷量隨時間變化曲線，計算了試品的離子遷移率和遷移距離，並對試品na ~ + 、 k ~ +的含量進行了化學分析。
  15. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  16. From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48. 5 % improvement in the strained si layer

    通過比較實驗我們可以獲知，應變si材料中的電子遷移率相比于體si材料最大可有48 . 5 %的提高，而應變sige材料中的空穴遷移率相比于體si材料可有近15 %的提高。
  17. I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v

    對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v
  18. Due to the good performance of gaas devices of high frequency, high electron mobility and low noise, the high frequency devices are mostly made of gaas materials now

    由於gaas器件優良的高頻、高電子遷移率、低噪聲性能，所以現在高頻器件一般都選用gaas材料。
  19. Based on gan hemt device physics and experiment results, we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model

    基於ganhemt器件物理和實驗分析測試結果，發現電子遷移率與二維電子氣濃度有關，並提出了一種gan電流崩塌效應的新物理模型。
  20. It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro - optic modulators

    它是制備性能優良的光電子與微電子器件，如光纖通訊激光器、光電探測器、高電子遷移率晶體管、電光調制器等的主要選擇對象之一。
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