電子阱 的英文怎麼說

中文拼音 [diànzijǐng]
電子阱 英文
electron trap
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 電子 : [物理學] [電學] electron
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. Advanced cooled quantum well infrared photodetector qwip

    先進的製冷型長波量子阱紅外光電探測器
  3. Numerical study of voltage - current characteristics in a three - quantum - well superlattice unit

    三量子阱超晶格單元結構電流特性的數值研究
  4. With results coming so thick and fast, it is no wonder that, as monroe says, “ many feel that ion traps are well ahead of other technology in the quest to build a large - scale quantum computer

    看到這些能夠執行既多且快的成果，難怪門羅會說：很多人覺得，在建造大尺度的量子電腦上，離子阱比其他技術都先進多了。
  5. As the increasing of concentration, the host and guest interconverted, and the more the charge been transferred, the more the total energy decreased. finally, we deduce that the doping of rubrene in pvk just acting as traps in electroluminescent devices, and its trapping electrons arrested many cavities in pvk. and so, more pvk who did n ' t transport energy was concerned with trop and it makes less pvk was concerned with energy transfer in photoluminescent devices than in electroluminescent devices

    基於光致發光和電致發光中pvk與rubrene發光強度的不同，我們對低摻雜時的電致發光和光致發光進行了比較，並提出：在電致發光中， rubrene的摻入在pvk鏈間相當于陷阱，其陷阱電子對pvk空穴的吸引，使一部分在光致發光中不參與能量傳遞的pvk參與了這種陷阱作用，使得在電致發光中不參與能量傳遞的pvk可能比光致發光中少。
  6. The study indicate that sral2o4 : tb3 + phosphor can be composed from 1250c to 1550c, the phosphor ' s luminance reduce and the afterglow time shorten along with the compounding temperature ; the better luminance and afterglow with the better crystalloid degree ; the luminescence of tb3 + ion in the sral2o4 is coming from the transition of 5d4 - 7fj ( j = 6, 5, . . . 0 ) ; the afterglow is because of the electron that seized in the trap released which integrate with the luminescence center

    合成發光體亮度隨合成溫度的降低而逐漸降低，余輝時間逐漸縮短；當合成物具有較好的結晶度時，合成的發光粉不僅發光亮度高而且余輝時間長； tb ~ （ 3 + ）離子在sral _ 2o _ 4基質晶格中的發光主要來自於~ 5d _ 4 ~ 7f _ j （ j = 6 ， 5 ， … … 0 ）的躍遷；其餘輝是因為不斷有被陷阱所俘獲的電子釋放出來與發光中心復合。
  7. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  8. We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field

    我們開創性的把它應用到處理有拋物線量子阱中的束縛極化子，得到了有外電場的量子阱中，類氫雜質中的電子基態能量的解析結果。
  9. As shallow electron traps ( sets ) dopants, the action of k4fe ( cn ) 6 that can increase photoelectron lifetime and photographic efficiency is analyzed. optimization concentration of k4fe ( cn ) 6 in cubic agcl emulsion is affirmed

    分析了k _ 4fe （ cn ） _ 6摻雜物作為一種淺電子陷阱摻雜劑對于提高光電子壽命、改善感光性能的作用機理。
  10. Using a simple variation - fitting method ， the exciton binding energies of a sawtooth - shaped quantum well are calculated as a function of an electric field ， and the explanation of the results is also given

    採用一種變分擬合的簡單方法計算了電場下鋸齒型多量子阱的激子結合能，對計算結果給出了合理的解釋
  11. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  12. The thesis concerns mainly about the bounded polaronic effect in the parabolic quantum well in an electric field

    本論文主要討論了在有外電場時拋物線量子阱中的束縛極化子效應。
  13. We adopted the same basis states as they used to construct the quantum - well d ~ centers " wave function

    用這個波函數研究了量子阱中帶負電激子的一些性質。
  14. Today ' s digital typefaces are most often used for offset lithography, electrophotographic printing or other processes that are not subject to the ink supply variations of letterpress, so ink traps have largely disappeared from use

    現今的數字化字體通常都用於平版印刷、電子照排印刷等場合，不會受到凸版印刷供墨不穩定的影響，因而油墨陷阱基本上沒有了用武之地。
  15. The active aspects include ion traps, nuclear magnetic resonance ( nmr ) technique, quantum electrodynamics cavities, josephons junctions, and semiconductors quantum dots

    主要包括離子阱、核磁共振、量子電動力學腔、約瑟夫結和半導體量子點。
  16. In this thesis we discuss these three aspects in detail and our main research work is outlined as follows : in section 2 we first give a definition of entanglement and illustrate some distinctive qualities of entangled states, then explain how to describe entanglement of multi - particle quantum state. in section 3 we show many existing different schemes for preparation of entangled states by spontaneous parametric down conversation, cavity quantum electrodynamics and iron traps, moreover we present new schemes to prepare multi - atom entangled states as well as multi - cavity entangled states

    在第二章中我們將給出糾纏態的定義和度量，研究糾纏態的一些特性，第三章中我們將系統介紹目前理論上利用自發參量下轉換，通過腔量子電動力學和離子阱制備糾纏態的各種方案，以及在實驗上的進展，並在論文中重點提出了利用原子和腔場相互作用來制備多原子糾纏態和多腔場糾纏態的方案。
  17. We conduct a theoretical study on the properties of a bound polaron in a quantum well under an electric field using linear combination operator and unitary transformation methods, which are valid in the whole range of electron - lo phonon coupling

    摘要採用線性組合算符及幺正變換方法研究了電場對量子阱弱耦合束縛極化子的性質的影響。
  18. However, it becomes independent on channel depth in strong inversion region, which is in accordance with numerical analysis

    結果進一步顯示，只考慮方形勢阱的量子力學結果，略高估計了閾電壓，且低估了電子密度。
  19. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  20. The main points include : the bias electric field and the charges in the traps are the main reasons to generating hot electrons, the number and the kinetic energy of hot electrons are determinative for damage degree of ga ? s bands, relaxation degree of ga ? s network reflects the degree of breakdown, and the number of the detrapping of trapped electrons reflects the degree of restoration

    其主要作用機制為:偏置電場和陷阱電荷電場可產生大量熱電子，熱電子的數量和動能決定ga一as鍵的損壞程度， ga一as的斷裂程度反映pcss 』 s的擊穿類型，而退陷電荷的數量則反映了pcss ， s可恢復損傷的程度。
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