電晶體效應 的英文怎麼說

中文拼音 [diànjīngtǐxiàoyīng]
電晶體效應 英文
transistance
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 電晶體 : bjt
  • 效應 : [物理學] effect; action; influence
  1. Affiliated with piezoelectric effect of quartz, inner nonlinear electric polarization is calculated, equivalent body bound charges and sueface bound charges under torque are approached

    聯系石英晶體的壓電效應，計算出內部的電極化場，並利用電場等效原理求解出等效電極化體電荷與面電荷分佈。
  2. To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.

    為適應高阻抗需要，儀器輸入電路中須用特殊設計的靜電計專用電子管、場效應晶體管。
  3. Field effect transistor

    場效應電晶體
  4. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  5. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  6. In chapter two we analytically study the nonlinear lattice effects for the ground state of electron - phonon interaction one - dimensional molecular crystal system

    第二章用解析方法研究一維分子晶體電子-聲子耦合系統基態中晶格非線性效應。
  7. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  8. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  9. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  10. The precursors of lico0. 8ni0. 2o2 cathode material for lithium - ion batteries are prepared from lithium hydroxide, cobalt acetate, nickel acetate and oxalic acid by the method of low - heating solid - state reactioa the ucoagnioiqz samples are obtained by sintering the precursors at different temperatures for 12hr. their structures and morphologies are studied by the powder xrd and sem

    由於mil ：的jalllieller效應使mhoj面體發生畸變，焙燒溫度對樣品晶體棚及電化學性能的影響4肽，與同樣方法合成的li帥及eenaq相比， d仙血o的晶胞形狀變得更加扁平，晶胞體積增大。
  11. Based on the converse piezoelectric effect of quartz, a novel dual - mode interferometric electronic voltage transformer is presented

    摘要基於石英晶體的逆壓電效應，研製出一種雙模干涉式的電子電壓互感器。
  12. ( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed. theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented. and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields, a larger f can be achieved effectively than that obtained with no field applied

    由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，並且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。
  13. In those books of electro - optics effect, bso crystal material possesses the advantage of low driving voltage, wide modulating rage etc, and take care of superiorly

    在各種電光效應材料中， bso晶體以其半波電壓低，調制幅度大等顯著優點而備受青睞。
  14. Theory and experiments of bulk - wave acousto - electro - optical ( aeo ) device, involving one - dimension and multi - dimension, are systematically studied. the thesis includes the following contents : coupled - wave equation theory of aeo interaction, determination of the optimum operating mode of aeo device, geometrical relationships of the anisotropic acousto - optic interaction, design and experiment of the aeo device. finally, the optimum design of ao device with beam steering theory is also studied

    論文主要研究內容包括:一維和多維聲電光效應的耦合波方程及其衍射效率計算公式的建立、一維和多維聲電光器件最佳工作模式的選擇、聲電光晶體反常聲光互作用幾何關系的計算、 ln一維反常聲電光器件和kdp二維反常聲電光器件的設計製作以及實驗測試、正常與反常超聲跟蹤聲光偏轉器的優化設計。
  15. The electronic - ceramic capacitive - type sensor for coi is based on the nanometer and semiconductor theories. according to the mechanism of the gas surface absorbing actions and the mechanism of grain boundary effect of semiconductors, the capacitance of the sensor can be changed with the variation of co2 concentration

    Co _ 2氣敏陶瓷電容型傳感器將納米理論和半導化理論引入了傳感器的研製過程中，這種傳感器通過氣體表面吸附，及在半導體介質的晶界層產生的晶界效應，使得不同濃度co _ 2氣體產生不同的電容值。
  16. Through the calculation of the electromagnetic green ' s function, we investigate the spontaneous emission behavior from atoms in one - dimensional photonic crystal. we found that the pc effect may lead to the coexistence of both accelerated and inhibited decay processes

    通過計算一維光子晶體中電磁場的green函數，我們考察了一維光子晶體中原子自發發射的壽命分佈，發現光子晶體效應能使原子自發發射速率加快或減慢。
  17. Discrete semiconductor devices and integrated circuits - field - effect transistors - additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors

    分立半導體器件和集成電路.場效應晶體管.電源轉換場效應晶體管測量方法中附加功率特性和amds
  18. Quantum effect devices : electron waveguides, single electron transistors, etc

    26量子效應元件：電子波導，單電子電晶體等。
  19. Hfets ( modulation doped ) : modfets ? basic device, theory. deep level problem ( transconductance collapse ) ; pseudomorphic solution. telecommunications applications ? key features : gain, bandwidth, linearly, noise

    調節摻雜場效電晶體-基本元件，理論。深能階問題（電導崩塌）與假晶方案。通訊應用-主要特點：增益，頻寬，線性度，雜訊。
  20. Besides, silicon substrate is bent by applying external mechanical stress, the lattice of channel will have strain due to uniaxial tensile stress by nmos and strain due to uniaxial compressive stress by pmos

    但微影技術已經接近瓶頸，所以我們必須另外尋找能夠提升電晶體效能的方法，應變矽就是目前提升電晶體性能最熱門的方法。
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