電極反向電流 的英文怎麼說

中文拼音 [diànjífǎnxiàngdiànliú]
電極反向電流 英文
electrode inverse current
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 反 : Ⅰ名詞1 （方向相背） reverse side 2 （造反） rebellion 3 （指反革命、反動派） counterrevolutionari...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電極 : electrode; pole
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  2. Measurements of the electrical properties of transmitting tubes - measuring methods of reverse grids current

    發射管電性能測試方法柵極反向電流的測試方法
  3. At normal operating voltage, the tvs diode is inactive, like an open circuit

    雪崩崩潰二極體是以反向電流的方式，連接在線路上。
  4. On the other side, measuring errors of grounding resistance and solution of current voltage electrodes reversing has been compared with horizontal two layers and vertical delaminating ( three layers soil )

    比較分析了電流電壓極反向布置、在水平雙層和垂直分層或三層土壤結構中接地電阻測量的誤差和解決辦法。
  5. The researching results indicate the reverse recovery characteristics of the device are much improved : the reverse recovery time is remarkably shorted, the peak reverse current is notably reduced and the soft factor s is also increased in various degrees but not notable changed in forward drop when introducing the two kinds of novel structure

    結果表明，採用新結構后，反向恢復特性大大改善，恢復時間明顯縮短，軟度因子s顯著提高，反向峰值電流也有不同程度的降低，其綜合性能遠遠高於si同類型結構及常規p ~ + （ sige ） - n ~ - - n ~ +二極體。
  6. Conventional hard switching technology has several flaws below : on and off loss, inductive off, capacitive on and diode recover problems. comparing with it, the loss of on and off decreases markedly, as the switches are on and off in zero voltage or zero current cases. and also the size of converter becomes smaller because of the higher of switching frequency

    傳統硬開關技術由於存在開通關斷損耗大、感性關斷、容性開通、二極體反向恢復等問題，與之相比，軟開關技術在零電壓或零電流條件下導通，開關損耗明顯降低，加上開關頻率的提高使得變換器的體積得以減小，這也是軟開關技術受到青睞的原因。
  7. The experimental results show that the surface charging is related with the pre - flashover events, the pre - flashover events can bring the change of surface charge distribution. these may be attributed to the micro - discharge caused by the traps in insulator. the charge carriers can be captured by traps, a space electric field will be set up by the trap centers, and the combined electric field may exceed the breakdown electric field of local area, then the micro - discharge will be initiated

    分析表明，反向預閃絡現象與材料的陷阱分佈有關，試樣中電極附近的陷阱中心俘獲載流子后所形成的空間電場的作用是產生這一現象的原因；預閃絡現象和表面帶電現象都是由於絕緣子表面陷阱中心俘獲載流子形成空間電場造成局部場強過強引發的局部放電形成的。
  8. The radial high current forms the virtual cathode in the reflected high frequency field, which further modulates the emitted electron beam

    徑向強流電子束在徑向反射場中會形成虛陰極振蕩，單獨的虛陰極振蕩產生的微波效率低。
  9. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  10. Collector backward current

    集電極反向電流
  11. All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished

    兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。
  12. In a polar circuit it causes the loop current to flow in a direction opposite to that for a mark impulse

    在極性電路中，空號脈沖促使環路電流向傳號脈沖相反的方向流動。
  13. 1 ) the transformer leakage inductance will cause surge voltage across the switches. two clamp circuits are combined to solve this problem : lcd clamp circuit, in which the voltage across clamp capacitor is no reverse ; flyback clamp circuit, which consists of an additional flyback winding coupled with the boost inductor and a diode connected to the output terminal

    本文綜合了兩種箝位電路: 1 ） lcd箝位電路，箝位電容上電壓不反向; 2 ）通過增加一個與升壓電感耦合的反激線圈和一個連接到輸出電容的整流二極體，構成反激箝位電路。
  14. Semiconductor devices ; discrete devices ; part 6 : thyristors : section 3 : blank detail specification for reverse blocking triode thyristors, ambient and case - rated, for currents greater than 100 a

    半導體器件.分立器件.第6部分:晶體閘流管.第3節:電流在100a以下的額定環境和外殼的反向阻擋三極閘流晶體管的空白詳細規范
  15. The photo - induced phase transition of the different light intensities, photo - energies and directions of the polarized light is investigated. it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films. the relation between the he - ne laser reflectivity of the thin film, applied current and resistance was analyzed by the optics theory of solid state physics

    光子通過激發e _ g向下電子的躍遷，從而改變材料自旋極化方向，影響體系的輸運行為；首次研究了cmr薄膜的激光反射率和偏置電流的關系，並用固體光學理論對其定性分析，表明反射率的變化是由於電場引起材料的晶格畸變，改變了極化率，從而導致材料的折射率和反射率發生改變。
  16. The performance of state - of - the art silicon pin diodes is now approaching the theoretical limits, and it is apparent that further advances in silicon technology are very difficult because of material properties

    傳統的sipin功率二極體由於si材料特性的局限性，很難實現開關速度、通態壓降和反向漏電流三者良好的折衷。
  17. Based on the theory mode, the delay time between the beginning of optical illumination and the onset of lock - on switching was calculated, and the transiting speed of electrons, the traversing velocity of the current filament, was obtained as well. the calculated results matched well the experimental results. taking advantage of the ultra - fast response characteristics of the devices, si - gaas pcss ' s are successfully applied to the broadening test of nanosecond laser pulses

    應用單極電荷疇模型數值計算了lock - on效應的光、電時間延遲和載流子的渡西安理工大學碩士學位論文越速度（絲狀電流穿越開關間隙的速度） ，所得計算結果與實驗測試結果基本吻a利川半絕緣gaas光屯導開關的超快光l匕11向應燈性，成功地應川下納秒激光脈沖展寬試驗中，證明了開關可廠泛應川在超快光電響應和光電反饋網路中。
  18. The converter not only keeps all the characteristics of the basic zvs pwm h - fb tl converter, but also eliminates the voltage oscillation and voltage spike across the rectifier diodes in both three - level mode and two - level mode, leading to a reduced voltage stress of the rectifier diodes

    本文在基本zvspwmh - fbtl變換器中引入兩只箝位二極體，無論是在三電平模式還是在兩電平模式，都可以消除輸出整流二極體反向恢復造成的電壓尖峰和振蕩，降低了輸出整流管的電壓應力。
  19. However, at turn - off, the diode current reverse for a reverse recovery time trr before falling to zero

    然而在關斷時，二極體的電流在降至零之前有一個反向恢復時間。
  20. The density of its field emission catelectrode tip is about 24000tip / mm2, the onset emission voltage is 0. 5 ~ iv, the backward voltage is larger than 25v, the current of single tip is 0. 2na, the sensitivity is 98. 5mv / bar

    其場致發射陰極錐尖陣列密度達24000個mm ~ 2 ，起始發射電壓為1 5v ，反向電壓25v ，當正向電壓為5v時，單尖發射電流為0 . 2na ，壓力靈敏度為98 . 5mv bar 。
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