電極接觸電阻 的英文怎麼說

中文拼音 [diànjíjiēchùdiànzǔ]
電極接觸電阻 英文
contact resistance of electrode
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 接 : Ⅰ動詞1 （靠近;接觸） come into contact with; come close to 2 （連接; 使連接） connect; join; put ...
  • 觸 : Ⅰ動詞1 （接觸） touch; contact 2 （碰; 撞） strike; hit 3 （觸動） touch 4 （感動） move sb ; sti...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 電極 : electrode; pole
  • 接觸 : 1. （交往） come into contact with; get in touch with 2. （沖突） engage 3. （挨上; 碰著） contact; touch
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. The influences of vertical grounding electrodes on grounding resistance, step and touch voltages were analyzed numerically

    採用數值計算方法分析了垂直接地極對接地系統的接地電阻、接觸電壓及跨步電壓等的影響。
  2. It creates the model of layer soil by using the cdegs software, analyses the resistance error which is measured by traditional three - poles way, measures the grounding grids resistance and soil resistance rate of hejin power plant, creates the electromagnetic model of layer soil and grounding grids model of hejin power plant, calculates the step voltage > touch voltage n voltage distribution of earth surface in fault of hejin power plant. in the end, it compares the measuring value and calculating value of grounding grids resistance in hejin power plant

    本文利用cdegs軟體建立分層土壤接地模型，對傳統三極法測量接地電阻誤差進行分析；對河津電廠接地網接地電阻和土壤電阻率進行測量；建立河津電廠分層土壤電磁模型和接地網模型；計算河津電廠接地網電阻和事故狀態下跨步電壓、接觸電壓和地表電位分佈；最後對河津電廠接地網電阻實測值與計算值進行比較分析。
  3. The main work includes three contents as followings : 1, the situation of ohmic contact about al electrode, ti / al electrode on n - gan in different annealing conditions are investigated

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型gan在不同退火條件下的歐姆接觸情況，並用挖補圓盤法計算出接觸電阻率。
  4. The results show that the vertical grounding electrodes can effectively decrease grounding resistance, step and touch voltages of the grounding system and reduce the influence of seasonal factors on the grounding system

    分析表明，增設垂直接地極能有效減低接地系統的接地電阻、減小發變電站的接觸電壓和跨步電壓、減小季節因素對地網安全性的影響。
  5. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  6. Ultrasonic wire bonding was applied to connect the contacts and sub - miniature - a ( sma ) connectors. also a suitable shield box has been designed for the test of hts filters

    對于超導濾波器的焊接，採用超聲點焊焊接sma的接頭和高溫超導濾波器的接觸電極，實現了較小的接觸電阻和較好的機械強度。
  7. Because the contact resistance between the metal contacts and the superconducting films has large impact on the performance of superconducting filters, we experimental techniques. after annealing the optimum temperature and, we got the minimum contact resisitivity. we also further studied the interaction between ag and ybco films after annealing at a certain temperature and attempted to give an explanation and discussion

    金屬接觸電極與超導薄膜之間的接觸電阻對超導濾波器的插入損耗有很大影響，因此，本文通過多種實驗方法，系統的研究了ag與ybco超導薄膜之間的接觸電阻問題，得到了最佳退火溫度，並對退火時ag與ybco超導薄膜之間相互作用的機理進行了研究和探討。
  8. But, with the development, it can ’ t meet the need of modern manufacture more and more. as a result, handhold digital storage oscilloscope is studied. handhold dso is an important genre of digital storage oscilloscope, it ’ s outstanding feature include small form, use battery instead of ac supply for power, and include the whole function of dso while implementing the basic function of multimeter. handhold dso can measure wave range automatic, analyze wave use cursor, measure resistance 、 diode and short circuit if choice digital multimeter

    手持式數字存儲示波器是數字示波器的一個分支，它具有體積小、重量輕、便於攜帶、電池供電、無須外接交流電源等優點，它集數字萬用表（ dmm ） 、數字存儲示波器於一體，可自動對信號進行幅度的測量，也可用光標對波形進行分析，同時還可以通過菜單選擇來實現對電阻、二極體以及電路通斷的測試;可以選擇觸發通道和觸發模式。
  9. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  10. By the analysis of the mechanism of charge carries transporting in the detector and the polarization effect of msm detector, we get : the polarization effect of cdse detectors is mainly caused by the poor transporting of charge carries ; to avoid the polarzation effect and improve the charge carries transporting property, the detector must has a suitable anode, so as to make a more suitable electrical field

    此外，本文還通過分析探測器中的電荷輸運機理，對具有msm結構的探測器的極化現象進行了定性的分析，指出光生載流子輸運受阻是引起極化現象的原因之一，只有改變探測器的正極接觸，從而改變探測器內的電場分佈，改善載流子的輸運特性，才能消除極化現象。
  11. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。
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