電極斜率 的英文怎麼說
中文拼音 [diànjíxiélǜ]
電極斜率
英文
electrode slope- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 極 : i 名詞1 (頂點; 盡頭) the utmost point; extreme 2 (地球的南北兩端; 磁體的兩端; 電源或電器上電流...
- 斜 : 形容詞(跟平面或直線既不平行也不垂直的) oblique; slanting; skew; bevel; diagonal; askew; inclined; tilted
- 率 : 率名詞(比值) rate; ratio; proportion
- 電極 : electrode; pole
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Application of caving mining technology with bottom under condition of flat dipping mid - thick body and unstable rock caused the most of trench and bottom drift, located in abutment, to be destroyed and low recovery in south area, xishimen iron mine
摘要在緩傾斜中厚礦體底板巖性不穩固的條件下,採用有底柱崩落法,由於電耙道大多處于空區邊部應力集中的部位,致使塹溝及底部結構巷道破壞嚴重而使回收率極低,採用無底柱崩落卸壓則可有效解決上述難題。Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析,對所得結果從器件內部物理機制上進行了討論,最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深(凹槽深度)的增大,槽柵器件的閾值電壓升高,亞閾斜率退化,漏極驅動能力減弱,器件短溝道效應的抑制更為有效,抗熱載流子性能的提高較大,且器件的漏極驅動能力的退化要比改變結深小.因此,改變槽深加大負結深更有利於器件性能的提高In this thesis, an evolutional waveform in sustain period by combining the ramp - type sustain pulse with the auxiliary pulse on address electrode is proposed to improve the luminous efficiency in plasma display panel
摘要:本論文提出在電漿顯示器每一個子圖場的維持時段中,利用斜緩維持波形以及在寫入電極上加入輔助電壓方波的方法,提升電漿顯示器發光效率的新驅動波形。The article relates that the tool ' s measurement precision has been improved by applying cycling acquisition method, self calibration function and phase - sensitive detector. the image coverage rate is improved and reached to 60 percent by increasing the number of pad ' s buttons. the tool carried out two logging functions : fast - scanner mode and dip mode
本文敘述了採用循環採集法、自刻度功能、相敏檢波等方法提高了儀器的測量精度;通過增加極板電扣的數量將圖像覆蓋率提高到60 ;實現了快掃描、傾角兩種測井模式;將測斜短節與預處理短節合二為一,縮短了儀器長度;去除了零伺服控制系統,簡化了電路;用fpga晶元對採集控制器重新設計。For high sustain frequency, adding an auxiliary pulse on address electrode in the early stage of ramp - type sustain pulse to induce a pre - discharge
在高維持頻率的情況下,當斜緩維持波形電壓值仍低時,在寫入電極上加入輔助電壓方波產生一次「先期放電」 。分享友人