電流密度 的英文怎麼說

中文拼音 [diànliúmìdù]
電流密度 英文
ampere density
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The overvoltage varies inversely with the current density to some extent.

    超電壓在某種程度上隨電流密度成反比地變化。
  2. Tunneling process is important in the low to moderate current density range.

    在中等及中等以下電流密度下，隧道穿透過程是重要的。
  3. Measure current density by probe method

    電弧的電流密度
  4. The weight of coating and current density has the direct ratio relation

    電鍍層的量隨著電流密度的增大而增大。
  5. Anodic current density

    陽極電流密度
  6. Effect of precursor powder on microstructure and critical current density of - 2223 tapes

    銀超導帶材的顯微結構及臨界電流密度的影響
  7. Study on optimal current density to annealing fe - based amorphous wire by pulse current

    鐵基納米非晶絲脈沖電流退火的最佳電流密度研究
  8. The effects of different current density on the alloying element content were discussed. based on the results, the optimal process condition was confirmed : pb ~ ( 2 + ) 80 - 90 g / l sn ~ ( 2 + ) 7 - 15 g / l ch _ 4so _ 3 ( dissociative ) 130 - 150 g / l composite additive 12 ml / l current density 2 - 6 a / dm ~ 2

    採用hull槽實驗方法確定了甲磺酸體系電沉積pb - sn合金鍍層的電流密度范圍，並探討了不同沉積電流密度下pb 、 sn合金含量的變化規律。
  9. 1. the composition and current efficiency of ni - w - b electrodeposit in the bath containing ammonium citrate as complexing agent were related to the deposition current density and bath composition

    在以檸檬酸銨為絡合劑的鍍液中， ni - w - b合金電沉積層的組成和沉積電流效率與沉積電流密度及鍍液的組成等有關。
  10. The method of obtaining high concentration of na2feo4 solution by quick electrolysis mainly contains four aspects : adoption of either a diaphragm or an ionic membrane electrolytic cell in which a thin anodic cell lying between the two cathodes, ( 2 ) using an iron anode that has larger specific surface area, ( 3 ) keeping suitable concentration of naoh in the anodic cell, adoption of lower current density and higher electrolyzing speed. the practical technique parameters follow a s below : the naoh solution of 14 - 16mol / l, the temperature of 303 - 308k, the surface anodic current density of 300a / m2, the unit electrolyzing speed of efficiency larger than 6. 0a / l

    快速電解獲取高濃度na _ 2feo _ 4溶液的方法，主要包括四個方面：採用兩陰極室夾一厚度較小的陽極室的隔膜（或離子膜）電解槽；使用比表面積較大的鐵網陽極；保持陽極室中有適宜濃度的濃naoh溶液；採用較低的電流密度和較高的電解速度。具體工藝參數是： 14 16mol / lnaoh溶液、溫度303 308k 、表觀陽極電流密度300a m ~ 2 、有效單位電解速度6 . 0a / l 。
  11. Current density and electroplating velocity has line relation, but the increscent multiple of electroplating velocity is smaller than that of current density. which indicate that current efficiency decreases with the increase of current density at alcb + lialh4 system. at l - 5a / dm aluminum coating is dense and uniform, especially at 2. 5a / dm

    電流密度與電鍍速度兩者近似成直線關系，但電鍍速度增大的倍數比電流密度增大的倍數要小，說明在alcl _ 3 + lialh _ 4體系中隨著電流密度的提高，電流效率逐漸降低。
  12. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  13. The distributions of current density and potential on the negative plates with the radiational or expanded grid designs are more uniform than those on the positive plate

    輻射式和拉網式負極板在化成開始時電流密度和電位的分佈都比正極板上分佈均勻得多。
  14. At the end of the formation, both current and potential distributions are uniform. however, their distributions on the negative plate with the expanded grid design are a little more uniform

    化成結束時電流密度和電位分佈都比較均勻，且拉網式負極板比輻射式負極板更均勻。
  15. When formed for 8h, because most of paste on the negative plate has converted into lead, the polarization increases and the potential changes greatly, these distributions on the two kinds of negative plates become non - uniform again

    當化成8h時，由於負極板上的鉛膏大部分轉化為鉛，極化上升，電位變化很大，所以兩種負極板上電流密度和電位分佈又變得不均勻。
  16. This paper researches on the practical current and potential distributions on the positive and negative plates of automotive batteries in the course of their formation processes by the means of an in situ electrochemical scan, and then studies the influences of the formation and also the additives on the performance of the automotive plates

    本文利用電化學掃描方法研究鉛酸蓄電池正負極板在化成過程中電流密度和電位分佈及化成對極板電性能的影響。同時分析了正負極添加劑的性質及其對極板性能的影響。
  17. Liberation of hydrogen gas would be increased rapidly and sic particles on the surface might be dispersed if the current density exceed the upper limit. furthermore, nickelous hydroxide would be deposited because the ph of plating solution nearby the surface rapidly increased. all of above might result in coating deterioration

    若電流密度過大，超過所允許的上限值，會析出大量的氫氣，可能沖散表面覆蓋的sic微粒，而且易使磨頭表面鍍液ph值急劇上升而形成氫氧化鎳沉澱，導致鍍層質量惡化。
  18. ( 4 ) low current density is better for ni - sic composite plating, the sic particles is nonconductive

    （ 4 ） ni一sic復合電鍍宜使用較低的電流密度。
  19. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  20. Finite element method ( fem ) is used to quantificationally simulate the current density distribution of the whole cfrc sample, and to explain the mechanism and reason for precipitations " depositing in the crack tip

    利用有限元定量地模擬了整個試件的電流密度分佈狀況，闡述了沉積物在裂紋尖端的沉積狀況及其原因。
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