電流載流子 的英文怎麼說

中文拼音 [diànliúzǎiliúzi]
電流載流子 英文
current carrier
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 載 : 載Ⅰ名詞（年） year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The work on the simulation of filter, which was applied to the oled to improve the characteristic of chromatics of emission, was introduced

    有機發光器件的載流子注入、傳輸、復合過程與器件本身的材料、結構、工作電壓密切相關。
  2. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  3. The former was related to mn doping, both of p - carries supplied by la3 + or oxygen hole and n - carries induced by changing mn4 + into mn3 + can be locally displaced and simultaneously response with external electric field., furthermore due to the overlaps between positive and negative carries. the latter was due to the phase transformation between orthorhombic and cubic, which was in fact the curie point

    前者為la ~ （ 3 + ）和氧空位等產生的p型載流子和mn離子變價引入的n型載流子在外電場下發生局域重排產生的載流子極化，且由於正負載流子的迭加效應所致，該介電峰與mn離子的摻入相關；後者為體系出現相應的正交與立方結構的轉變所致，也即居里點。
  4. Measurement of minority carrier life time in germanium by photoconductive decay method

    用光電導衰減法測定鍺中少數載流子壽命
  5. Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay

    硅和鍺體內少數載流子壽命測定光電導衰減法
  6. Carries created by ultra - fast laser pulse accelerate in the field of the photoconductor and form a transient photocurrent. the shape of the photocurrent lies on the movement of the carriers, as well as the movement of the carrier ' s lies on the field in the photoconductor

    光電導體中的載流子在光電導體內的運動情況決定了所輸出電脈沖的波形，而載流子的運動是在光電導體內部電場的作用下進行的，所以光電導體內的電場對光電導開關的性能有顯著的影響。
  7. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  8. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  9. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  10. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  11. Conductivity type - the type of charge carriers in a wafer, such as “ n - type ” and “ p - type ”

    傳導性（電學方面） -一種關于載流子通過物質難易度的測量指標。
  12. The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed

    從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。
  13. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  14. The filled skutterudite compounds attract aboard attention owing to their high mobilities and relatively large seebeck coefficients in the middle temperature range of 600 - 800k. but their thermal conductivities are very high, so the problem how to decrease their lattice thermal conductivities and improve their zt values becomes a research hotspot

    填充式skutterudite化合物由於在中溫領域（ 600 800k ）具有很高的載流子遷移率和較大的seebeck系數而引起人們的廣泛關注；但其熱導率k較高，因而如何降低晶格熱導率kl ，提高其熱電性能指數zt值已成為研究的熱點。
  15. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  16. Account for the high electrical field induced from the high applied voltage relative to small dimension device, the mechanism of hot - carrier generation is analysed, the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed

    基於mosfet偏壓不能按比例縮小所導致的高電場，對mosfet的熱載流子產生機理進行了分析，導出了熱載流子注入所引起的界面態的si - h健斷裂模型，並建立了表徵器件熱載流子效應的襯底電流模型。
  17. Charge carrier density gradient

    電荷載流子密度梯度
  18. Charge carrier distribution

    電荷載流子分佈
  19. The tail of localized states in the band gap is formed, and in the high temperature range, the behavior of metallic conduction can be observed

    並根據其電導、載流子濃度、遷移率隨溫度的變化分析zno ： al薄膜的導電機制。
  20. They can dynamically change the distribution of electric field, carriers and current densities in pcss, caused output current to delay and also strengthen the local electric field enough to satisfy qualification of domain, and then cause avalanche. the time of delay is determined by the time of attaining the qualification of domain

    非線性光電導開關的時間延遲效應則是由於半絕緣gaas材料中的el2深能級中心動態地改變開關中的電場、載流子濃度引起的；延遲時間的長短主要由滿足成疇所需條件的時間決定。
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