電級效應 的英文怎麼說

中文拼音 [diànjíxiàoyīng]
電級效應 英文
polar effect
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 級 : Ⅰ名詞1 （等級） level; rank; grade 2 （年級） any of the yearly divisions of a school course; gra...
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 效應 : [物理學] effect; action; influence
  1. The cdte films doped te are deposited onto glass substrate by close spaced sublimation. the x - ray diffraction data indicate the pure cdte films are polycrystalline zinc - blende structure with grain orientation predominantly along ( 111 ) direction. the electrical properties of cdte films are investigated by hall effect measurement using the van der pauw method

    X射線衍射分析表明，純cdte薄膜是立方閃鋅礦結構， （ 111 ）晶面取向生長； hall效應實驗測量發現薄膜電阻很高，呈p型電導，面電阻率數量級達1010
  2. In the chapter four, we studied some low - lying absorption spectroscopy and the resonant absorption probability of bohrium ( z = 107 ) by using mcdf method which included the correlation effects and relativistic effects systematically. we got some satisfied results of the ionization energy which make a good agreement with the results obtained by the semi - empirical method

    論文第四章通過系統考慮電子相關效應和相對論效應，使用mcdf方法進一步預言了107號元素bh的幾個較低的激發態能級以及由基態到這些激發態的共振吸收率，得到的電離能和使用半經驗方法得到的電離能結果具有很好的一致性。
  3. As the ic manufacturing process develops from sub - micron to very deep submicron ( vdsm ) technologies, with current lithography tools ( 248nm and 193nm ), foundries can not manufacture products that designs want because of so - called optical proximity effect ( ope )

    當集成電路生產工藝發展到納米級時，利用現有的曝光設備（ 248nm和193nm ） ，由於所謂的光學鄰近效應，集成電路製造廠商已經無法製造出滿足電路功能要求的產品。
  4. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  5. The electrical conductance of the gold / polymer composite films was tunable, and a low resistivity of the order of 10 ~ ( - 4 ) cm was yield. the conducting mechanism was not determined, perhaps the tunnel effect and the foreign - substance - electron - transfer should be considered

    聚合物金納米粒子復合薄膜的電阻率可調，電阻率最低可達10 ~ （ - 4 ） ? cm量級，導電機制可能與隧道效應及雜質離子導電有關。
  6. The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically. the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps

    在輻照的位移效應方面：從理論上對電子輻照在4h - sic中引入的缺陷數量和各種缺陷能級進行了計算和分析，其中只有eh6 / eh7缺陷能級在sic中起著有效的復合中心的作用。
  7. Replacement of final power fets in all - solidstate tv transmitte

    全固態電視發射機末級場效應功放管的更換
  8. Caculation is carried through adopting mechanism function of the first order reaction, f1 : f ( ) = l -. the results have good linear relativities, a, the precipitated fractions are excellently representative, and f1 is ascertained the most probably mechanism function of " phase precipitation. the electric field reduces activation energies of " phase precipitation and average sizes of " particles both in 2090 and 1420 alloys

    採用一級反應的模型函數f1 ： f （ ） = 1 - ，計算了相析出的動力學，計算結果具有良好的線性相關性，並且具有很好的代表性，確定f1為相析出的最概然機理函數；電場固溶使2090合金和1420合金升溫時效過程的相析出激活能有一定程度的減小，並減小了相顆粒的平均尺寸。
  9. In chapter 3, after introducing the curvature - modified electronic structures of single - wall carbon nanotubes, we study the density of electronic states. the relations between the electronic structures and tube - diameters and chiralities are discussed

    第三章介紹了考慮捲曲效應后的單壁碳納米管的電子能級結構，並在此基礎上研究了單壁碳納米管的電子態密度，以及管徑和螺旋度對其電子結構的影響。
  10. In this thesis, we study the density of electronic states of single - wall carbon nanotubes. the effects of tube - diameters and chiralities on the electronic structures are discussed by means of the analytical expression of band structures of single - wall carbon nanotubes under the consideration of curvature effects

    本文中，我們通過考慮捲曲效應后的單壁碳納米管解析的能級結構表達式，研究了單壁碳納米管的電子態密度，以及管徑和螺旋度對其電子結構的影響。
  11. Compared with three - level atomic system, the atomic coherence effects in four - level can lead to eit and eia, which depend on the intensity of control light and the relaxation of the fourth level

    與三能級原子系統相比，四能級原子相干效應即可導致電磁感應透明的產生，也可產生電磁感應吸收現象，取決于控制光的強度和第四個能級衰變率的大小。
  12. Also from waveform polynomials of sequential circuits, a precise clocking method based on multiple - period sensitization is presented. a novel noise estimation method based on boolean process is first presented in this paper, using transition numbers to describe noise effects. then combined with the selection method of long sensitization paths based on waveform sensitization, a test generation approach that could generate the noisiest sensitization waveforms for long sensitizatizable paths is presented

    為了適應超深亞微米電路測試的要求，本文建立了一種新的基於布爾過哈爾濱工程大學博士學位論文程論的邏輯級噪聲預測模型，用波形多項式描述的同時發生的跳變數來預測l卜足聲大小，並生成能產生最大跳變數目的輸入波形;然後同基於波形敏化的長敏化通路選擇法相結合，形成一種能產生最大噪聲效應的敏化測試波形生成新方法。
  13. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  14. Recent years, the using of piezoelectric sensors becomes a focus in novel biosensors research. the basic principle is that the characters of its oscillation are highly responded with the changes of the surface mass adsorption, or the physic characters in the reaction system including density, viscosity, conductivity and so on. a piezoelectric biosensor with a nanogram sensitivity could be constructed through a reasonable biological processing and structure designing to the piezoelectric quartz crystal

    近年來，壓電傳感器檢測技術逐漸成為生物分析中的研究熱點，其基本原理是利用石英晶體振蕩特性對石英晶體表面質量負載（質量效應）和反應體系物理性狀如密度、粘度、電導率（非質量效應）等的改變具有高度敏感的特性，通過對石英晶體進行適當的生物學處理和結構設計，構建出具有具有ng級檢測能力的生物傳感器。
  15. The simulation results show that the power factor and efficiency of lim are much lower than that of rotary induction motor due to end effect and big air gap of lim. end effect force has a great influence on the thrust of lim. the performance of lim can be improved with the proper secondary structure, small air gap, big goodness factor or heavy load

    結果表明:受邊端效應及大氣隙影響，直線感應電機功率因數及效率較低;運行狀態下的邊端效應力對電機推力有較大影響;設計電機時選用合適的次級材料、減小氣隙、增大品質因數、增加負載都可提升電機的輸出性能，通過設計有效的控制演算法可使電機在額定滑差下具有較高的運行效率。
  16. In this modulator, coplanar strips ( cps ) are used as electrodes for they support balance mode propagation of microwave, and this is a desired merit for common optical modulator. due to the miniaturized dimensions, the metallization thickness is in the order of skin depth and the conductor losses are not negligible

    雖然由於金屬的趨膚效應，電場將集中在金屬表面，但在40g以上的頻率條件下，金屬的厚度和趨膚深度在一個量級，而且此時調制器帶寬受到限制的最大根源來源於金屬電極的微波損耗。
  17. In the laboratory experiment part, human peripheral blood, cultured cells and icr mice were study objects. the changes of mitotic chromosome numbers were measured by human metaphase chromosome counts and statistic analyzed used x2 - test. the changes of meiotic chromosome numbers were measured by mice one - cell zygote chromosome counts and statistic analyzed usedx2 - test. the effects of low dose ionizing radiation on the expression of topoisomerase ii were measured by immunocytochemistry, western blot and rt - pcr

    流行病學結果顯示長期小劑量輻射接觸與染色體不分離呈正相關，為進一步在細胞遺傳學和分子生物學方面研究小劑量電離輻射與染色體不分離關系及其機制，本課題第二部分以外周血、培養細胞、 icr小鼠為研究對象，用外周血染色體計數和單細胞受精卵染色體計數的方法研究小劑量輻射和拓撲異構酶復旦大學2000級博士生學位論文11a抑制劑及其二者的協同效應對有絲分裂和減數分裂染色體不分離的影響，用免疫細胞化學染色、 westernblot 、 rt pcr等方法研究了電離輻射引起拓撲異構酶a表達變化。
  18. Our group has prepared nanometer - scale metal films in layer structures on glassy carbon ( gc ) substrate by cyclic voltammetric deposition. by using co as probe molecule, we have revealed for the first time, abnormal ir effects ( aires ) on these layer nanostructured films. the alres consists of several abnormal ir features including the enhancement of ir absorption, the inversion of ir band direction ( anti - absorption ), and the increase of fwhm ( increase of the number of different adsorption sites )

    本研究小組採用電化學循環伏安電沉積法在gc基底上制備層狀納米結構金屬薄膜，以co作為分子探針，觀察到異常紅外效應（ aires ）光譜特徵，即co等探針分子發生紅外吸收增強、紅外譜峰方向倒反（反吸收）和譜峰變寬（振動能級離散程度增加） 。
  19. The results show that pu / cb composites adding crystal b and crystal c display no ptc effect, but the room temperature resitivity of composites increase with the increasing of the content of organic crystal ; the composites adding crystal a and crystal d displays obvious ptc effect and the ptc strength is 1 ~ 3 grades

    實驗結果表明，加入晶體b 、晶體c的聚氨酯cb復合體系不具有ptc效應，但體系的電阻率隨晶體含量的增加而增大；加入晶體a和晶體d的復合體系具有明顯的ptc效應，且ptc強度達1 3個數量級。
  20. The more poles mode, the unequal pole width mode ; the low - frequency slot harmonic modulation mode and the mode of changing end magnetic conductance are presented, and these designing method can efficiently weaken the end effect and decrease the wave of the thrust

    提出的採用多極電機方式；初級與次級極距不等的方式；齒諧波低頻調制方式和改變電機兩端部磁導的方式等電機的設計原則和方法，都可有效地削弱端部效應，減小推力的波動。
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