電荷數 的英文怎麼說
中文拼音 [diànhéshǔ]
電荷數
英文
charge number-
Mathematical model of staring ccd detector arrays
凝視型電荷耦合器件探測器數學模型A white led driver circuit is presented in this paper. the circuit drives up to four white leds with regulated constant current for uniform intensity. by utilizing proprietary adaptive 1x / 1. 5x modes and ultra - low - dropout current regulators, it maintains the highest possible efficiency over the full 1 - cell li + battery input voltage range
整體電路以恆定電流驅動4隻白光led ，利用1倍/ 1 . 5倍分數型電荷泵和低壓差電流調節器，在整個鋰電池供電電壓范圍內保持最高的效率，並使四個白光led獲得均勻的亮度。Image method used for coplanar interconnects dependent parameter calculation
用鏡像電荷法求取共面互連線寄生參數With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed
本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出真空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。As we go to molecules with higher nuclear charge, the parameter k for the gls mo will increase.
研究到有較高核電荷的分子時glsMo的參數K將增加。Standard test method for permittivity of geotextiles under load
載荷條件下土工織物介電常數的標準試驗方法The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied
介紹了數值計算方法，包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。Total kmno4 consumptions by lignin in both pulp and effluent were measured and the difference of this value from the kmno4 consumption by lignin in original unbleached kraft pulp was used as the indication of the extent of oxidation that lignin in the pulp experienced during oxygen bleaching
該方法對溶出殘餘木質素的氧化結果分析發現其呈明顯3個階段：第一段木質素氧化的當量電荷數約4 ~ 5 /木質素單元；木質素總氧化電荷數大約為9 /木質素單元。The numbers of protons and electrons in an atom are normally the same, giving an uncharged atom
通常，原子內的質子和電子的數目是相同的，所以原子不帶電荷。The " allowed " electric dipole ( el ) transitions will encounter strong competition from " forbidden " transitions, i. e. magnetic dipole ( ml ), electric quadruple ( e2 ) and other higher order transitions, the transitions rates for the forbidden decay scale with higher powers of z than those of el transitions, the effects of quantum electrodynamics ( qed ) also scale with higher power of z. accelerator - based beam - foil spectroscopy ( bfs ) is an important method for spectroscopic studies of highly ionized atoms
在高離化態原子中，磁相互作用明顯增強， 「允許的」電偶極（ e1 ）躍遷將遭到來自磁偶極（ m1 ） 、電四極矩（ e2 ）和其它高次的「禁戒」躍遷的強烈競爭，禁戒躍遷幾率隨核電荷數z增加而迅速增加，此外量子電動力學效應也隨著z增加而增強。Two circuits, characterized by high power factor and low output voltage, are proposed. one is originated from the concept of charge pump, and the other functions in the same principle with so - called buck - boost circuits
最後提出了兩種功率因數校正的電路拓撲：一種是由電荷泵原理引出的；另一種是基於buck - boost原理工作的電路。In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。Nuclear charge number
核電荷數Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。Cosmic ray test was carried out to choose and optimize working parameters of full - length prototype and its data acquisition system, verify the electronics system about dynamic range, drift time measurement search window, charge measurement integral width, work stability and electronics grounding and noise. in experiment, acquired abundant experience with the solution of actual problem and verified their reliability of physical design. this lays the foundations for the successful construction of the besiii drift chamber and electrical system
測試過程中我們調整了電子學的動態范圍、漂移時間和電荷測量參數驗證了電子學系統工作的穩定性、抗干擾能力及噪聲水平等並成功解決了實驗過程中遇到了問題。通過長時間的取數進一步檢驗了全長模型和電子學系統工作穩定性，驗證了全長模型及其數據獲取系統物理設計的可靠性，為漂移室和電子學系統的成功研製奠定了基礎。If the electric charges in the two stars are supposed to be equal, it can be calculated according to the kulun ' s theorem that 19100 nuclear unity masses must have one electron, such that the electromagnetic force produced can provide enough centrifugal force for the rotation
假定兩星所帶的電荷數量相等，根據庫侖定律，我們可以計算出，在兩星中平均每19100個原子單位質量，就必須帶有一個電子電荷，所產生的靜電引力才能夠提供足夠的向心力。Highly ionized atoms have several properties that differ from those of neutral and few times ionized atoms. since the nuclear charge z greatly exceeds the charge of the remaining electrons, there are large magnetic effects
高離化態離子核外電子數遠小於核電荷數z ，故其性質不同於中性或低離化態的離子。And a new numerical charge - sheet model for sic mos inversion layers is presented based on an numerical solution of a one - dimension poisson equation
文中還提出了一個新的sicmosfet反型層薄層電荷數值模型。Charges, coordination numbers, and geometries
電荷數配位數及幾何構型Modulating the voltages at the same frequency as the jet guarantees that the correct level of charge is present on the drops
通過用與墨滴同樣的頻率施加調制電壓，可以保證正確的電荷數被正確加載在墨滴上。分享友人