電阻件 的英文怎麼說

中文拼音 [diànzǔjiàn]
電阻件 英文
resistance unit
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. The combined toy as right request 3 stated, whose character is : the electronic components electrically or electromagnetically connected with the iron stick or the magnet stick can be resistor, capacitor, inductor, battery, switch, diode, audion, ic ( integrated circuit ), motor, led ( light - emitting diode ), infrared ray receiver, sound circuit and instrument

    如權利要求3所述的組合玩具，其特徵是：和鐵棒或磁鐵棒電連接的電子元器件是可以是電阻、電容、電感、電池、開關、二極體、三極體、集成電路、馬達、發光二極體、紅外線接受器、發聲電路、儀表。
  2. As one of the most important applications, cmr bolometer is fabricated using the lacamno3 films, which has a metal - insulator transition temperature at 300k. the archetypal bolometer is fabricated after the film is photolithographed, evaporated au electrodes and fixed

    以製作室溫超巨磁電阻測輻射熱儀為目標，將t _ （ mt ） 300k ， tcr 5的薄膜進行光刻、電極製作、封裝等處理製作測輻射熱儀原型器件。
  3. This paper presents a method that chopping wave is done by switch devices which consist of three - level resistance regulating module and intelligence power module ipm, and which realizes constant - current discharge of storage battery. to achieve the intelligence control of the drive protection and the discharge process of ipm, the paper designs circuit formed by igbt threshold drive pulse pwm signals. ipm fault - blocking protection circuit and microcomputer 80c196. the devices can accurately control the 0 ~ 150a discharge current and the discharge time of the storage battery and calculate the releasing power

    實現蓄電池恆流放電過程智能控制是蓄電池放電裝置發展的必然趨，本文提出了一種通過三極電阻調節模塊和由智能功率模塊ipm為開關器件進行斬波從而實現蓄電池恆流放電的方法。為達到對ipm的驅動保護和放電過程的智能控制，文中設計了igbt門極驅動脈沖pwm信號形成電路和ipm故障封鎖保護電路及由單片機80c196為核心的微機控制器。本裝置能夠對蓄電池進行0 150a放電電流及放電時間的精確控制及釋放容量的計算。
  4. We adopt new production process of cold ends, so our sic heating elements have excellent specific rate of heat zone resistance and cold end resistance, saving energy, long life, avoiding over - temperature of cold ends to damage the furnace body. the commercial name of our sic heating elements is songshan silca heating elements

    我們的碳化硅電熱元件採用新的冷端部生產工藝，具有優良的熱冷端電阻比，節能、壽命長，同時避免了因冷端部溫度過高對爐體造成的損害。
  5. Since the discovery of colossal magnetoresistance effect ( cmr ) in per - ovskite manganites, it has sparked considerable renewed interests in these long - known materials with an eye towards both an understanding of the cmr and related properties and potential applications in magnetic information store and low - field magnetic sensors

    以鈣鈦礦結構氧化物為代表的巨磁電阻材料，由於它們所表現出來的超大磁電阻效應（ colossalmagnetoresistance ）在提高磁存儲密度及磁敏感探測元件上具有十分廣闊的應用前景，因而受到人們的廣泛關注。
  6. Adjustable resistor, potentiometer, plastic parts, silk - screen

    1 ）可調電阻、電位器、塑膠零件
  7. Using the rock resistivity meter with simulating in - situ conditions, the relations between rock resistivity and temperature were observed from 6 sandstone samples with different porosity and permeability, while samples were brine water - saturated and subjected to certain confining pressure. it is found that the resistivities of water - saturated rock samples decrease in the form of power expression with the temperature increase. although the resistivity of brine water decreases with temperature in the same rule, it can not entirely account for the decreasing of rock resistivity. the cementation factor

    利用模擬地層條件巖芯電阻率測量儀，對6塊孔隙度滲透率各不相同的砂巖巖芯，在一定圍壓條件下，巖芯完全飽和鹽水時，考察了巖芯電阻率隨溫度的變化。發現飽和鹽水巖芯的電阻率隨溫度升高，以冪函數形式下降。雖然巖芯中飽和鹽水的電阻率同樣隨溫度以冪函數形式下降，但巖芯電阻率的下降不能完全用巖芯飽和鹽水的下降表徵。
  8. Thermistors are semiconductor devices whose resistance varies with temperature.

    熱敏電阻是一種半導體元件，它的電阻隨溫度而變化。
  9. When it is affected by different temperature, a sensing signal will be obtained through inside measuring loop

    以熱電阻偶為感溫元件，當它感受到溫度變化時，通
  10. Torsion - shear specimen for testing resistance spot welds

    檢測電阻點焊用扭轉剪切樣件
  11. We select ni / cr alloy resistor as element together with ceramic embedding hearth ; select small flat - and - disc heat - even hubby ceramic sample holder, select ni / cr & ni / si thermoelectric couple ( type k ) as thermoscope with threads 0. 5 mm in diameter which is installed in the middle of the holders symmetrically ; select aluminum silicate fire - retardant fiber as materials for heat preservation ; design some hardware, for example temperature controller & transporter, signal amplifier etc ; design controlling curve to heat stove ; and introduce the method of least squares nonlinear regression and subsection function to deal with data. in order to obtain the reasonable operation conditions and operation curve, we have also done many theory analysis and experiment discussions

    通過理論和試驗探討，選用鎳鉻合金電阻絲作為加熱元件，配以陶瓷質埋入式爐膛；選用陶瓷質小尺寸扁平?圓盤均熱塊體型樣品支持器；選用0 . 5mm絲徑鎳鉻?鎳硅熱電偶（ k ）作為測溫元件；熱電偶對稱安置在樣品支持器容器的中部；選用硅酸鋁耐火纖維作保溫材料；合理選用和設計了溫度控制器、溫度變送器、信號放大電路等硬體；採用升溫曲線來控制爐膛供熱過程；採用最小二乘法非線性回歸與分段函數相結合的曲線模擬方法，進行圖形處理。
  12. In order to improve process quality and increase probability, we optimize ohm contact resistance and breakdown voltage of devices by adjusting process conditions. finally, dc - 500mhz midf switch is fabricated, in which some important conclusions and suggestions are introduced

    工藝研究的重點是改進工藝質量，提高成品率，為此我們通過調整工藝條件來優化歐姆接觸電阻和提高器件的擊穿電壓。
  13. The product of electric furnace fittings including : micro - computer program temperature control instrument 、 refractory brick ( ultra - light weight energy saving brick ) 、 resistance wire 、 electroheat belts 、 electrical heat tube 、 silicon carbide rod 、 furnace bottom plate 、 muffle tank 、 vacuum sealed fan 、 wind wheel 、 axis 、 substructure 、 bin seat 、 flat shape plate 、 box 、 panel 、 weatherstrip plate 、 return air plate 、 bin 、 connection box 、 educe rod 、 thermocouple 、 thyristor 、 porcelain pipe 、 crucible 、 furnace chamber 、 furnace frame 、 charging bin 、 substructure 、 pit furnace cover lifter framework ( sole design ) and otherwise

    電爐配件產品包括：微電腦程序控溫儀、耐火磚（超輕質節能磚） 、電阻絲、電阻帶、電熱管、硅碳棒、爐底板、馬弗罐、真空密封風機、風葉、軸、底座、料筐座、扁形板、箱體、面板、擋風板、回風板、料筐、爐柵、接線盒、引出棒、熱電偶、可控硅、瓷管、坩堝、爐膛、爐門、爐框、裝料筐、底座、井式爐蓋升降機構（獨家設計）等。
  14. " electronic 1c chip drawing system " provides many functions such as " modify the position of the component ' s diagram " " modify the color of the component ' s diagram " " magnify and minify the component ' s diagram without distortion " " change the type of drawing line " " edit some physical properties of the component " " copy and paste diagram of one component " " delete one or more component diagrams " " move more than one components " positions " " change the z _ order of the diagram, set it to back or bring it to front " " save the drawing of the electronic components to one file and the file extension name is *. brd " " print the drawing ". users can finish all these functions easily by clicking and dragging the mouse

    電路板元器件繪制系統主要完成了使用鼠標拖拽、鼠標點按的方式繪制電路板上各種常見的元器件圖形；編輯電路板上元器件圖形的位置；編輯元器件圖形的顏色；不失真的對器件圖形進行放大和縮小；編輯元器件圖形的線型；編輯電路板上各個器件的物理屬性（比如電阻的阻值大小、電容的容量大小、額定電壓等） ；復制已經繪制出的電路板上的器件；粘貼剪貼板上的器件；刪除單個或多個已經繪制出的器件圖形；同時改變多個器件圖形的位置；改變繪制區內各個元器件的zorder順序，也就是可以將層疊在一起的圖形置前或置后；把繪制的電路板器件圖保存到指定文件中；能打開、查看和修改保存的電路板器件圖；列印電路板器件圖。
  15. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  16. Power mosfets on - resistance will have a - ve temp coef and not + ve at low current levels. this is important to remember when paralleling devices

    功率mosfets導通電阻有負溫度系數，小電流時有正系數。當並聯這些器件的時候記住以上很重要。
  17. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  18. Santana electric fuel injection resistor works

    桑車電噴電阻件
  19. Jettawang resistor works audi six - cylinder resistor works

    奧迪六缸電阻件
  20. 420 resistor works

    420電阻件
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